• Journal of Animal Environmental Science
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• v.12 no.1
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• pp.7-12
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• 2006

Ammonia emission from swine production process originates from three major sources: manure storage facility, swine housing, and land application of manure. Most of the ammonia gas that are emitted from swine production operations is the by-product of aerobic or anaerobic decomposition of swine waste by microorganism. Knowing the ammonia emission rate is necessary to understand how management practices or alternative manure handling process could reduce impacts of this emission on the environment and neighbors. Ammonia gas emission from pig slurry is very difficult to predict because it is affected by many factors including wind speed of slurry surface, temperature or pH of the swine slurry, sort breed differences and classes, and diets. This study was carried out to effects of pH and temperature on ammonia gas emission from growing-finishing pig slurry. Treated far slurry in this study were pH and temperature. Results showed that pH of slurry variable changes 5, 6, 7, 8 upon an addition of NaOH and $HNO_3$, respectively. The temperature of the slurry which was contained in a water bath maintained at increasing levels ranging from 10 to $35^{\circ}C$. Ammonia emission rate of influenced pH and temperature such that the increase in pH or temperature resulted to an increase in ammonia emission. The ammonia gas was not detected at pH 5 and 6. Moreover, at a slurry of pH 8, the ammonia ranged from 28 to 60ppm and 8-29 ppm at slurry pH of 7 while temperature was 13 to $33^{\circ}C$. When slurry pH was>6, the ammonia emission was significantly increased according to rise in temperature in contrast to acid treatment of the pH. There was also a significantly increase in ammonia emission relative to slurry pH of 7 to 8. The above findings showed that to effectively reduce ammonia emission from slurry of growing-finishing pigs, the pH and temperature should be maintained a low levels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.34-38
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• 2005

Effects of pH level and slurry particle size on material removal rate and planarization of langasite single crystal wafer have been examined. Higher material removal rate was obtained with lower pH level slurries while the planarization was found to be determined by average particle size of colloidal silica slurries. Slurries containing 0.045 ㎛ amorphous silica particles showed the best polishing effect without any scratches on the surface. Effective particle number has a strong effect on the surface planarization and the removal rate, so that the lower effective particle numbers produced low removal rate but the better planarization results.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.190-196
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• 2021

Desulfurization reaction in a bubble type reactor was carried out by adding three organic acids such as acetic acid, lactic acid, and antic acid to investigate the enhancement of the desulfurization performance of low-grade limestone. Desulfurization of limestone slurry without organic acids initiated to degrade at pH 5.2 or less, whereas organic acid-added limestone slurry exhibited a stable efficiency in the initial desulfurization with slurry pH ranging 4.2~4.5. At slurry pH below 4, the desulfurization performance of limestone slurry with addition of organic acids may be related to the amount of anions produced by dissociation of the organic acids. When limestone slurry had a large amount of anions, a rapid decrease in buffer capacity of slurry pH did not occur. These results were due to the acidity and dissociation of organic acids. The desulfurization performance of low-grade limestone slurry increased in the order of acetic acid (2.6%) < lactic acid (6.4%) < formic acid (16.7%).

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1288-1291
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• 2004

In this study, physical characteristics of alumina slurry on variation of pH value and the effect of non-ionic surfactants on alumina slurry for copper chemical mechanical planarization (CMP) slurry have been investigated. After pH value of the slurry with alumina abrasive was changed by adding various amount of $HNO^3$ or KOH, the differences of settling rate, particle size, and zeta-potential were estimated. Better settling rates were shown in slurries with alumina abrasive at near pH 1. Higher zeta-potential was shown at around pH 2 in alumina slurry and the point of zero charge (PZC) was measured at about pH $9\sim10$. Non-ionic surfactant was added in the slurry with 5wt% alumina abrasive to get its effect on slurry practically. Abrasive size was smaller increased when amount of surfactant increased in slurry with P-4 as abrasive; on the other side, it was smaller when amount of surfactant decreased with AES-12. Variation of zeta-potential has no tendency with adding surfactant; however, values of zeta-potential were between $35\sim50mV$. The proper amount of surfactant was $0.1\sim1.0wt%$ in slurry with P-4 and $0.5\sim1.0wt%$ in slurry with AES-12 respectively. Excellent dispersion stabilization was obtained by addition of non-ionic surfactant

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.308-311
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• 2003

The mesoporous TiO2 film for the dye-sensitized solar cell was prepared by the spin coating using nano particle $TiO_2$ slurry. In order to obtain the good dispersion of nano size $TiO_2$ particles in slurry, the pH of solvent, the sort and quantity of solvent additive and the quantity of surfactant were adjusted. The experimental range of pH was $2\;{\sim}\;4$. The basic solvent for slurry was dilute $HNO_3$ and the solvent additives were ethylene glycol, propylene glycol and butylene glycol. The degree of particle dispersion was indirectly estimated by the viscosity of slurry and the microstructure after sintering. As results, the lower the pH of solvent was the lower the viscosity of the slurry became. The addition of ethylene glycol and propylene glycol to dilute $HNO_3$ brought about the lowering of viscosity and the enhancement of stability in slurry. The addition of surfactant lowered the viscosity of slurry. It was possible to obtain the homogeneous and uniformly dispersed mesoporous TiO2 film using the dilute HNO3 solvent of pH 2 with the addition of ethylene glycol, propylene glycol and neutral surfactant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.274-278
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• 2002

The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.415-420
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• 2001

Water usage in the semiconductor industries is dramatically increased by not only using bigger wafer from 8 inches to 12 inches but also by adapting new process such as Chemical Mechanical Planarization (CMP) process invented by IBM in late '80. However, The document published by International Semiconductor Association suggests the decreasing ultra pure water (UPW) use from 22 gallon/in$^2$in 1997 to 5 gallon/in$^2$ in 2012. The criteria will possibly used as exporting obstacle in the future. Generally, Solid content of CMP slurry is about 15wt%. The slurry is diluted with UPW before fed to a CMP process. When the slurry is discharged from the process as waste, it contains 0.1~0.6wt% of solid content and 9~10 at pH. The CMP waste slurry is discharged to stream with minimum treatment. In this study, to find optimum condition of coagulation for water recovery from the waste CMP slurry various condition of coagulation were examined. After coagulation far 0.1 wt% solid content of waste CMP slurry, the sludge volume was 10~15% after 30 min of sedimentation time. For the 0.5 wt%, sludge volume was 50~55% after one hour of sedimentation time. For more than 80% of water recycling, the solid content should be in the range of 0.1 to 0.2wr%. Based on the result of the turbidity removal, the Zeta Potential and the analysis of heavy metals, the optimum condition for 0.1 wr% of waste CMP slurry was with 20 mg/L of PACI at 4 to 5 of pH. The result showed that the optimum conditions fer the 0.1 wt% waste CMP slurry were 100mg/L of Alum at 4~5 of pH, 100 mg/L of MgCI$_2$at pH 10 to 11 and 100 mg/L of Ca(OH)$_2$at pH 9 to 11, respectively.