Browse > Article
http://dx.doi.org/10.4191/KCERS.2007.44.2.098

Effect of Recycling Time on Stability of Colloidal Silica Slurry and Removal Rate in Silicon Wafer Polishing  

Choi, Eun-Suck (R&D Center, Siltron Inc.)
Bae, So-Ik (R&D Center, Siltron Inc.)
Publication Information
Journal of the Korean Ceramic Society / v.44, no.2, 2007 , pp. 98-102 More about this Journal
Abstract
The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.
Keywords
Recycling; Slurry; Abrasive; pH; Zeta potential; Removal rate;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 B. J. Palla and D. O. Shah, 'Stabilization of High Ionic Strength Slurries Using Surfactant Mixtures: Molecular Factors That Determine Optimal Stability,' J. Colloid Interface Sci., 256 143-52 (2002)   DOI   ScienceOn
2 R. K. Singh and R. Bajaj, 'Advances in Chemical Mechanical Planarization,' Mater. Res. Soc. Bull., 27 [10] 743-751 (2002)   DOI   ScienceOn
3 A. C. West, H. Deligianni, and P. C. Andricacos, 'Electrochemical Planarization of Interconnect Metallization,' IBM J. Res. & Dev., 49 [1] 37-48 (2005)   DOI   ScienceOn
4 G. B. Basim and B. M. Moudgil, 'Slurry Design for Chemical Mechanical Polishing,' KONA, 21 178-183 (2003)   DOI
5 B. J. Palla and D. O. Shah, 'Stabilization of High Ionic Strength Slurries Using the Synergistic Effects of a Mixed Surfactant System,' J. Colloid Interface Sci., 223 102-11 (2000)   DOI   ScienceOn
6 V. E. Gaishun, O. I. Tulenkova, I. M. Melnichenko, S. A. Baryshnin, Y. A. Potapenok, A. P. Xlebokazov, and W. Strek, 'Preparation and Properties of Colloidal Nanosize Silica Dioxide for Polishing of Monocrystalline Silicon Wafers,' Mater. Sci., 20 [2] 19-22 (2002)
7 D. Graf, A. Schnegg, R. Schmolke, M. Subren, H. A. Gerber, and P. Wagner, 'Morphology and Chemical Composition of Polished Silicon Wafer Surfaces,' Electrochem. Soc. Pro., 99-22 186-196 (1996)
8 H. G. Kang, T. Katoh, J. G. Park, U. Paik, and H. S. Park, 'Influences of pH and Concentration of Surfactant on the Electrokinetic Behavior of a Nano-Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing,' J. Kor. Phys. Soc., 47 [4] 705-711 (2005)
9 J. H. So, S. H. Bae, S. M. Yang, and D. H. Kim, 'Preparation of Silica for Wafer Polishing via Controlled Growth of Commercial Silica Seeds,' Kor. J. Chem. Eng., 18 [4] 547-554 (2001)   DOI
10 S. B. Yeruva, C. W. Park, and B. M. Moudgil, 'Modeling of Polishing Regimes in Chemical Mechanical Polishing,' Mater. Res. Soc. Symp. Proc., 867 W5.9.1-6 (2005)