Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Effect of pH level and slurry particle size on the chemical mechanical planarization of langasite crystal wafer

pH level 및 slurry 입도가 langasite wafer의 chemical mechanical planarization에 미치는 영향

  • Cho Hyun (Department of Materials Engineering, Miryang National University)
  • 조현 (밀양대학교 신소재공학부)
  • Published : 2005.02.01
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Abstract

Effects of pH level and slurry particle size on material removal rate and planarization of langasite single crystal wafer have been examined. Higher material removal rate was obtained with lower pH level slurries while the planarization was found to be determined by average particle size of colloidal silica slurries. Slurries containing 0.045 ㎛ amorphous silica particles showed the best polishing effect without any scratches on the surface. Effective particle number has a strong effect on the surface planarization and the removal rate, so that the lower effective particle numbers produced low removal rate but the better planarization results.

Langasite 단결정 wafer의 chemical mechanical planarization 공정에서 pH level 및 slurry 입도가 가공속도 및 평탄화도에 미치는 영향을 조사하였다. 낮은 pH level 조건하에서 더 높은 가공속도 값이 얻어진 반면에 평탄화도는 colloidal silica slurry의 평균입경에 의해 좌우됨을 확인하였다. 0.045 ㎛의 비정질 silica 입자를 함유한 슬러리를 사용하였을 때 표면에 잔류 scratch 형성이 없이 가장 좋은 가공성을 확보할 수 있었다. 가공속도와 평탄화도는 effective particle number에 대한 강한 의존성을 나타내었으며, effective particle number가 낮은 조건하에서 가공속도는 더 낮은 분포를 나타내었으나 평탄화도는 더 우수한 경향성을 확인하였다.

Keywords

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