• Korean Journal of Materials Research
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• v.4 no.4
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• pp.459-465
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• 1994

A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1467-1471
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• 2007

The green-emitting CeMgAl11O19:Tb (CMAT) phosphor has been prepared at 1200 °C by the simple solid-state reaction using AlF3 as a self-flux. This preparation temperature is much lower than those (1500-1700 °C) for conventional solid-state reaction and spray pyrolysis method. In particular, the complete process to produce high-quality phosphor particles was carried out through the single-step heat treatment of the mixture of corresponding oxide-type metal sources. An addition of AlF3 as a self-flux significantly decreased the crystallization temperature of CMAT with plate-like shape. The particle morphology could be controlled from plate-like to spherical by using H3BO3 as an additional flux. Thus, an optimal morphology and luminescence characteristics of CMAT were achieved when both AlF3 and H3BO3 fluxes were simultaneously used. Compared with conventional solid-state process, which is accompanied by the calcination step(s), and other alternative liquid solution techniques such as sol-gel method and spray pyrolysis, no use of active precursors and liquid media that are harmful to the environment is a distinctive advantage for the industrial purpose.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.246-251
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• 2014

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two step Single Slope A/D Converter (SS-ADC) is proposed. The A/D converter is composed of both 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D convertor. In order to reduce the pixel noise, further, a Hybrid Correlated Double Sampling (H-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA ($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35 mW at 3.3 V supply voltage. The measured conversion speed is 10 us, and the frame rate is 220 frames/s.

• Journal of the Korean Society of Clothing and Textiles
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• v.24 no.7
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• pp.1025-1034
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• 2000

Cotton differs from polyester in physical and chemical properties. When cotton/polyester blends are dyed, water-soluble dyes are generally used for cotton and disperse dye for polyester. Thus, two bath or one bath-two step dyeing process are usually accepted. These processes consume more energy and cost compared to a single step process. To save energy and cost, a single step dyeing and finishing is carried out with disperse dyes in the presence of a crossslinking agent. K/S values of the dyed fabrics were determined to examine the dyeing property of cotton, cotton/polyester, polyester fabrics dyed with disperse dyes in the presence of DMDHEU/PEG. The concentration of DMDHEU, molecular weight and concentration of PEG, curing time and curing temperature were varied.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.64-69
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• 2013

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two-step single-slope A/D converter is proposed. The A/D converter is composed of both a 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D converter. In order to have a small noise characteristics, further, a Digital Correlated Double Sampling(D-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35mW at 3.3V supply voltage. The measured conversion speed is 10us, and the frame rate is 220 frames/s.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.5
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• pp.559-571
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• 2012

Dimethyl ether (DME) is a new clean fuel as an environmentally-benign energy resource. DME can be manufactured from various energy sources including natural gas, coal, and biomass. In addition to its environmentally friendly properties, DME has similar characteristics to those of LPG. The aim of this article is to represent the development of new DME process with KOGAS's own technologies. KOGAS has investigated and developed new innovative DME synthesis process from synthesis gas in gaseous phase fixed bed reactor. DME has been traditionally produced by the dehydration of methanol which is produced from syngas, a product of natural gas reforming. This traditional process is thus called the two-step method of preparing DME. However, DME can also be manufactured directly from syngas (single-step). The single-step method needs only one reactor for the synthesis of DME, instead of two for the two-step process. It can also alleviate the thermodynamic limitations associated with the synthesis of methanol, by converting the produced methanol into DME, thereby potentially enhancing the overall conversion of syngas into DME. KOGAS had launched the 10 ton/day DME demonstration plant project in 2004 at Incheon KOGAS LNG terminal. In the mid of 2008, KOGAS had finished the construction of this plant and has successively finished the demonstration plant operation. And since 2008, we have established the basic design of commercial plant which can produce 3,000 ton/day DME.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.193-193
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• 2011

To obtain ceramic films, the sol-gel coating technique has been broadly used with heat treatment, but crack formation tend to occur during heat treatment in thick sol-gel films. We prepared PZT thin films by sol-gel method with single-step spin coating process. The PZT solution have been synthesized using lead acetate ($Pb(CH_3COO)_2$), zirconium acetylacetonate ($Zr(OC_3H_7^n)_4$), and titanium diisopropoxide bis(acetylacetonate) 75wt% in isopropanol ($Ti(OC_3H_7^i)_2(OC_3H_7^n)_2$) as starting materials and n-propanol was selected as a solvent. The poly(vynilpyrrolidone) (PVP) was added with 0, 0.25, 0.5, 0.75, and 1 molar ratios to control viscosity of solution. We investigated influence of the viscosity on thickness, microstructure, and electrical properties of final PZT films. Thermo-gravimetric analysis and differential scanning calorimeter (TGA/DSC) was carried out from room temperature to $800^{\circ}C$ in order to measure pyrolysis temperature. Structural characteristics were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and dielectric properties were measured by RT66A (Radiant) and impedance analyzer (Agilent), respectively. The thicknesses of PZT films depended on incorporation of an excess amount of PVP. Finally, we obtained PZT films of good quality without crack formation via single-step spin coating.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.666-669
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• 2002

Process design of hot forging, asymmetric to symmetric rail, which is used for the turnout of railway express has been investigated. Owing to the big difference in shape between the initial billet and the final forged product, it is impossible to hot forge the rail in a single step. Therefore, multi step forging as well as die design for each step are necessary for the production. The deformation behavior during hot forging has been analyzed by the numerical simulation through commercial FEA software, DEFORM$^{TM}$-2D. Modification of the design and repeated simulation have been carried out on the basis of the simulation result. For comparison with the simulation results, flow analysis experiment using plasticize has been also carried out. The results of the flow analysis experiment showed good agreement with those of the simulation. Therefore, the developed process design could be applied to the actual production.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1645-1648
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• 2006

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.