• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1555-1557
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• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.423-426
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• 2015

Current verification methods for on-chip memory have been implemented using coverpoints that are generated based on a single operation. These coverpoints cannot consider the influence of other memory banks in a busy state. In this paper, we propose a method in which the coverpoints account for all operations executed on different memory banks. In addition, a new constrained random vector generation method is proposed to reduce the required random vectors for the multi-operation-based coverpoints. The simulation results on NAND flash memory show 100% coverage with 496,541 constrained random vectors indicating a reduction of 96.4% compared with conventional random vectors.

• ETRI Journal
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• v.45 no.2
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• pp.304-317
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• 2023

With the rapid evolution of quantum computing, digital quantum simulations are essential for quantum algorithm verification, quantum error analysis, and new quantum applications. However, the exponential increase in memory overhead and operation time is challenging issues that have not been solved for years. We propose a novel approach that provides more qubits and faster quantum operations with smaller memory than before. Our method selectively tracks realized quantum states using a reduced quantum state representation scheme instead of loading the entire quantum states into memory. This method dramatically reduces memory space ensuring fast quantum computations without compromising the global quantum states. Furthermore, our empirical evaluation reveals that our proposed idea outperforms traditional methods for various algorithms. We verified that the Grover algorithm supports up to 55 qubits and the surface code algorithm supports up to 85 qubits in 512 GB memory on a single computational node, which is against the previous studies that support only between 35 qubits and 49 qubits.

• BMB Reports
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• v.57 no.4
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• pp.176-181
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• 2024

Memory allocation, which determines where memories are stored in specific neurons or synapses, has consistently been demonstrated to occur via specific mechanisms. Neuronal allocation studies have focused on the activated population of neurons and have shown that increased excitability via cAMP response element-binding protein (CREB) induces a bias toward memory-encoding neurons. Synaptic allocation suggests that synaptic tagging enables memory to be mediated through different synaptic strengthening mechanisms, even within a single neuron. In this review, we summarize the fundamental concepts of memory allocation at the neuronal and synaptic levels and discuss their potential interrelationships.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.26-33
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• 2012

As the flash memory has increased the market share of data storage in imbedded system and occupied the most of area in a system, It has a profound impact on system reliability. Flash memory is divided NOR/NAND-type according to the cell array structure, and is classified as SLC(Single Level Cell)/MLC(Multi Level Cell) according to reference voltage. Although NAND-type flash memory is slower than NOR-type, but it has large capacity and low cost. Also, By the effect of demanding mobile market, MLC NAND-type is widely adopted for the purpose of the multimedia data storage. Accordingly, Importance of fault detection algorithm is increasing to ensure MLC NAND-type flash memory reliability. There are many researches about the testing algorithm used from traditional RAM to SLC flash memory and it detected a lot of errors. But the case of MLC flash memory, testing for fault detection, there was not much attempt. So, In this paper, Extend SLC NAND-type flash memory fault detection algorithm for testing MLC NAND-type flash memory and try to reduce these differences.

• Therapeutic Science for Rehabilitation
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• v.7 no.3
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• pp.47-58
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• 2018

Objective : This study was conducted to investigate the effects of iPad applications on improvement of attention and short-term memory in mild dementia. Methods : A single-case experimental study using A-B-A design was conducted. A total of 20 sessions, including 5 each for baseline phase A and A' and 10 for the intervention phase, were provided to the subject. Interventions were only provided during the intervention phase and were iOS-based iPad applications named "Memorado-Moving Balls" and "Circles." "Fit Brains-Matching Pairs" and "Fit-Brains-Spot the Difference" were used for each session to evaluate attention and short-term memory. MMSE-K, K-TMT-e A and B, and DST assessment tools were used pre- and post-intervention to assess attention and memory. Result : Fit Brains scores indicated improvement in both attention and memory during the intervention phase. K-TMT-e A showed 3 increased correct points and 3 reduced error points, and B showed 7 increased correct points and 2 reduced error points in post-tests, but the DST and MMSE-K showed no meaningful change. Conclusion : This single-case study identified improvements in attention and short-term memory in a person with mild dementia using iPad applications. Further studies regarding different applications and larger samples with long-term designs are necessary.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.111-124
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• 2002

The ferroelectric RAM (FeRAM) has a great advantage for a system on a chip (SOC) and mobile product memory, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM and SRAM. This work develops at three levels: 1) low voltage operation with boost voltage control of bitline and plateline, 2) reducing bitline capacitance with multiple divided sub cell array, and 3) increasing chip performance with write operation sharing both active and precharge time period. The key techniques are implemented on the proposed hierarchy bitline scheme with proposed hybrid-bitline and high voltage boost control. The test chip and simulation results show the performance of sub-1.5 voltage operation with single step pumping voltage and self-boost control in a cell array block of 1024 ($64{\;}{\times}{\;}16$) rows and 64 columns.

• The Journal of the Korea Contents Association
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• v.12 no.1
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• pp.30-37
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• 2012

A memory system with the linear skewing scheme has been regarded as one of suitable memory systems for a single instruction, multiple data (SIMD) architecture. The memory system supports simultaneous access n data to m memory modules within various access types with a constant interval in an arbitrary position in two dimensional data array of $M{\times}N$. Although $m{\times}cells$ memory cells are physically required to support logical two dimensional $M{\times}N$ array of data by means of the memory system, at least (m-n)${\times}cells$ memory cells remain in disuse, where cells is (M-1)/q+(N-1)/$p{\times}{\lceil}M/q{\rceil}+1$. On keeping functionalities the memory system supports, $(n{\times}t){\times}N/p$ out of a number of unused memory cells, where t>0, being used as local buffer memories for n processing elements is proposed in this paper.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.262-269
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• 2005

Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.231.1-231
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• 2003