• The korean journal of orthodontics
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• v.51 no.5
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• pp.313-320
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• 2021

Objective: The purpose of this study was to evaluate the effects of chewing gum and low-level laser therapy in alleviating orthodontic pain induced by the initial archwire. Methods: Patients with 3-6 mm maxillary crowding who planned to receive non-extraction orthodontic treatment were recruited for the study. Sixty-three participants (33 females and 30 males) were randomly allocated into three groups: laser, chewing gum, and control. In the laser group, a gallium aluminum arsenide (GaAlAs) diode laser with a wavelength of 820 nm was used to apply a single dose immediately after orthodontic treatment began. In the chewing gum group, sugar-free gum was chewed three times for 20 minutes-immediately after starting treatment, and at the twenty-fourth and forty-eighth hours of treatment. Pain perception was measured using a visual analog scale at the second, sixth, and twenty-fourth hours, and on the second, third, and seventh days. Results: There were no statistically significant differences between the groups at any measured time point (p > 0.05). The highest pain scores were detected at the twenty-fourth hour of treatment in all groups. Conclusions: Within the limitations of the study, we could not detect whether low-level laser therapy and chewing gum had any clinically significant effect on orthodontic pain. Different results may be obtained with a higher number of participants or using lasers with different wavelengths and specifications. Although the study had a sufficient number of participants according to statistical analysis, higher number of participants could have provided more definitive outcomes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.4
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.97-103
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• 1999

Zinc sulfide is a ll-VI compound with a large direct band gap in the near-UV region and a promising material for blur-light emitting diode and laser diode. It was identified that the structure had zinc blonde structure through the analysis of X-ray diffraction patterns. It's lattice constant was measured to be $a_o=5.411{\AA}$. The optical absorption, photocurrent, and photoluminescence spectra were measured to investigate the optical properties of zinc sulfide single crystal. The optical energy band gap measured at room temperature was 3.61eV The energy band gap of zinc sulfide annealed in zinc vapor at $800^{\circ}C$ was lower 0.1eV than that of as-grown zinc sulfide through the analysis of the photocurrent spectra. The photoluminescence spectra were measured ranging from 30K to 293K for the two cases of as-grown and annealed zinc sulfide. As-grown ZnS single crystal had peaks at 350nm, 392nm, 465nm, and annealed zinc sulfide had peaks at 349nm.

• Korean Journal of Optics and Photonics
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• v.29 no.6
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• pp.247-252
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• 2018

We report amplification of a small signal in a diode-pumped Cs vapor cell with 500 torr of ethane buffer gas, in the low-pump-power regime of 200 mW or less. For efficient amplifier operation, the pump and signal beams were coupled to a single-mode optical fiber, and completely overlapped in the Cs vapor cell. We investigated the amplification of the small signal according to cell temperature, signal power, and pump power. An amplification factor of 56 was achieved under the conditions of cell temperature of $115^{\circ}C$, signal power of 0.1 mW, and pump power of 200 mW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.29-33
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• 2004

In this paper, we took the basic experiment in order to explore the characteristics of optical CT(optical current transformer) for measuring high current in a superhigh voltage condition using faraday effect and wrote that. We used the 1,310[nm] Laser Diode for the source of light and PIN-Photodiode for receiver. The transmission line of light was composed of the single-mode fiber of 30[m] which could maintain the state of polarization in the optical fiber. The range of current was from 400[A] to 1300[A]. In addition, the temperature ranged from $20[^{\circ}C}]\;to\;50[^{\circ}C]$. In a same experiment condition, a power magnitude increases in proportion as input current is increasing and temperature become low. The maximum ratio of error in temperature of $50[^{\circ}C]$ appears 0.15[%] and the 0.16[%], 1.24[%] and 0.07[%] is ratio of error in respectively $40[^{\circ}C],\;30[^{\circ}C],\;and\;20[^{\circ}C]$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.136-142
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• 2005

In this paper, we wrote about the basic experimentation of Optical CT's temperature characteristic to measure high-current in a super-high-voltage electric power equipment which is using Faraday effect. We used the 1310[nm] Laser Diode as the light source and PIN Photodiode as receiver. For the transmission line of light, we used 30[m] single mode fiber which could maintain the state of polarization in the optical fiber. For the experiment, the temperature transformation device make by aluminium. the The range of current was from 400[A] and 1300[A] and the range of temperature was from $-40[^{\circ}C]\;to\;50[^{\circ}C]$. In a same experimental condition, magnitude increased input current increase follow by increasing proportion of input current.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.423-430
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• 1994

We designed and fabricated the single mode fiber pigtailed DFB-LD module for 2.5 Gbps optical communication system. In the design of the DFB-LD module, we made the module divided into two parts of inner sub-module and outer 14-pin butterfly package and cylindrical shaped sub-module contain quasi confocal 2 lens system including optical isolator and electrical connection between these parts via hybrid substrate of bias T circuit. Laser welding was used to assemble the sub-module which requires accurate fixing between optical elements. The fabricated DFB-LD module showed optical coupling efficiency of 20% and - 3 dB small signal response of more than 2.6 GHz. We confirmed mechanical reliability of the module by temperature cycle test where the tested module exhibit optical power fluctuation of less than 10%. Finally we evaluated the performance of the fabricated DFB-LD module as light source of 2.5 Gbps optical communication system, sensitivity of - 30.2 dBm was obtained through 47 km optical fiber transmission under the criterion of $1\times10^{-10}$ BER and transmission penalties were 1.5 dB caused by extinction ratio and 1.0 dB caused by chromatic dispersion of normal single mode fiber. fiber.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.27-32
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• 1993

Separate-confinement hetero-structure (SCH) broad area Laser Diodes (LD's) were fabricated from $Al_{0.07}$Ga$_{0.93}$/. As single-quantum-well (SQW) grown by metal organic chemical vapor deposition (MOCVD). Under pulsed operation, we obtained maximum output powers of about 0.8watt/facet and 1.83watt/facet from LD's with 60$\mu$m and 160$\mu$m channel width, respectively, without facet coatings. The differential quantum efficiency of the 60$\mu$m wide LD was about 21.7%/facet and its threshold current density was about 1k [A/cm$^{2}$]. The differential quantum efficiency of the 160$\mu$m wide LD was about 25.6%/facet and its threshold current density was about 1k[A/cm$^{2}$]. The minimum threshold current density of 60$\mu$m wide LD's was 620[A/cm$^{2}$] when the cavity length was 603$\mu$m and the minimum threshold current density of 160$\mu$m wide Ld's was 675[A/cm$^{2}$] when the cavity length was 752$\mu$m. The internal quantum efficienty and the internal loss of both LD's were 92.3% and 18.1cm$^{1}$, respectively.