• 한국표면공학회지
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• 제56권4호
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• pp.219-226
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• 2023

Utilizing low-dimensional structures of oxide semiconductors is a promising approach to fabricate relevant gas sensors by means of potential enhancement in surface-to-volume ratios of their sensing materials. In this work, vertically aligned cupric oxide (CuO) nanorods are successfully synthesized on a transparent glass substrate via seed-mediated hydrothermal synthesis method with the use of a CuO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Cu metal film. Structural and optical characterization by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy reveals the successful preparation of the CuO nanorods array of the single monoclinic tenorite crystalline phase. From gas sensing measurements for the nitrogen monoxide (NO) gas, the vertically aligned CuO nanorod array is observed to have a highly responsive sensitivity to NO gas at relatively low concentrations and operating temperatures, especially showing a high maximum sensitivity to NO at 200 ℃ and a low NO detection limit of 2 ppm in dry air. These results along with a facile fabrication process demonstrate that the CuO nanorods synthesized on a transparent glass substrate are very promising for low-cost and high-performance NO gas sensors.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.59-59
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• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.

• 한국재료학회지
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• 제22권11호
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• 한국자기학회지
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• 제17권1호
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• pp.10-13
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• 2007

[ $LuFe_2O_4$ ] 단결정 시료를 floating zone법을 이용하여 합성, 결정학적 및 자기구조를 연구하였다. 결정 구조는 $R\={3}mh$의 능면체로 결정되었고, 격자 상수는 각각 $a_0=3.440(2)\;{\AA},\;c_0=25.263(2)\;{\AA}$이었다. 진동 시료 자화율 측정기(VSM) 실험결과와 $M\"{o}ssbauer$ 분석 실험결과 자기적 $N\'{e}el$ 온도($T_N$)는 250 K로 결정되었다. 12 K에서의 $M\ddot{o}ssbauer$ 스펙트럼을 결정구조에서 기인한 4개 세트의 6라인 공명흡수선으로 분석하였으며, 상온에서의 $M\"{o}ssbauer$ 스펙트럼은 3개의 single과 1개의 doublet이 중첩된 형태를 보였다. 상온에서 singlet들의 이성질체 이동치는 $Fe^{3+}$의 이온 상태를 나타내는 $0.20{\pm}0.01mm/s$ 전후의 값을, doublet은 $Fe^{2+}$의 이온 상태를 나타내는 $0.70{\pm}0.01mm/s$의 값을 갖는 것을 알 수 있었다. 상온에서의 $Fe^{3+}$와 $Fe^{2+}$간의 면적비율은 1:1로 나타났으나, 온도가 상승함에 따라 doublet 형태가 점차 사라지다가 360 K에서는 singlet 형태의 단일 흡수선으로 나타났다. 이는 $LuFe_2O_4$물질에서 나타내는 자발분극현상이 철 이온이 가지고 있는 거동의 변화 때문인 것으로 해석된다.

• 멤브레인
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• 제27권2호
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• pp.147-153
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• 2017

본 연구에서는 poly(ethylene oxide) (PEO)와 poly(ethylene-co-vinyl acetate) (EVA) 혼합으로 구성된 막을 통한 단일기체($N_2$, $O_2$, $CO_2$)의 투과 성질을 조사하였다. FT-IR 분석 결과 제조된 막에서 새로운 흡수피크는 보이지 않았는데, 이것은 PEO와 EVA가 물리적으로 혼합되었음을 나타낸다. SEM 관찰에서는 PEO/EVA 혼합 매트릭스에서 EVA 함량이 증가함에 따라 PEO의 결정상이 감소함을 보여 주었다. DSC 분석결과 PEO/EVA 혼합막의 결정화도는 EVA 함량이 증가함에 따라 감소하였다. 기체투과 실험은 4~8 bar의 공급압력에서 이루어졌다. PEO/EVA 혼합막에서 $CO_2$의 투과도는 공급 압력 증가에 따라 증가하였다. 그러나 $N_2$와 $O_2$의 투과도는 공급 압력에 무관하였다. 반면에, PEO/ EVA 혼합막의 모든 기체의 투과도는 반결정성 PEO에서 무정형 EVA의 함량이 증가함에 따라 증가하였다. 특히, 40 wt% EVA 혼합막은 64 Barrer의 $CO_2$ 투과도와 61.5의 $CO_2/N_2$ 이상선택도를 보였다. 높은 $CO_2$ 투과도와 $CO_2/N_2$ 이상선택도는 PEO의 극성 에테르기 또는 EVA의 극성 에스터기와 극성 $CO_2$ 간의 강한 친화성에 기인한다.

• 한국분말재료학회지
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• 제9권6호
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• pp.394-408
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• 2002

Nanostructured high strength metastable Al-, Mg- and Ti-based alloys containing different amorphous, quasicrystalline and nanocrystalline phases are synthesized by non-equilibrium processing techniques. Such alloys can be prepared by quenching from the melt or by powder metallurgy techniques. This paper focuses on one hand on mechanically alloyed and ball milled powders containing different volume fractions of amorphous or nano-(quasi)crystalline phases, consolidated bulk specimens and, on the other hand. on cast specimens containing different constituent phases with different length-scale. As one example. $Mg_{55}Y_{15}Cu_{30}$- based metallic glass matrix composites are produced by mechanical alloying of elemental powder mixtures containing up to 30 vol.% $Y_2O_3$ particles. The comparison with the particle-free metallic glass reveals that the nanosized second phase oxide particles do not significantly affect the glass-forming ability upon mechanical alloying despite some limited particle dissolution. A supercooled liquid region with an extension of about 50 K can be maintained in the presence of the oxides. The distinct viscosity decrease in the supercooled liquid regime allows to consolidate the powders into bulk samples by uniaxial hot pressing. The $Y_2O_3$ additions increase the mechanical strength of the composites compared to the $Mg_{55}Y_{15}Cu_{30}$ metallic glass. The second example deals with Al-Mn-Ce and Al-Cu-Fe composites with quasicrystalline particles as reinforcements, which are prepared by quenching from the melt and by powder metallurgy. $Al_{98-x}Mn_xCe_2$ (x =5,6,7) melt-spun ribbons containing a major quasicrystalline phase coexisting with an Al-matrix on a nanometer scale are pulverized by ball milling. The powders are consolidated by hot extrusion. Grain growth during consolidation causes the formation of a micrometer-scale microstructure. Mechanical alloying of $Al_{63}Cu_{25}Fe_{12}$ leads to single-phase quasicrystalline powders. which are blended with different volume fractions of pure Al-powder and hot extruded forming $Al_{100-x}$$(Al_{0.63}Cu_{0.25}Fe_{0.12})_x$ (x = 40,50,60,80) micrometer-scale composites. Compression test data reveal a high yield strength of ${\sigma}_y{\geq}$700 MPa and a ductility of ${\varepsilon}_{pl}{\geq}$5% for than the Al-Mn-Ce bulk samples. The strength level of the Al-Cu-Fe alloys is ${\sigma}_y{\leq}$550 MPa significantly lower. By the addition of different amounts of aluminum, the mechanical properties can be tuned to a wide range. Finally, a bulk metallic glass-forming Ti-Cu-Ni-Sn alloy with in situ formed composite microstructure prepared by both centrifugal and injection casting presents more than 6% plastic strain under compressive stress at room temperature. The in situ formed composite contains dendritic hcp Ti solid solution precipitates and a few $Ti_3Sn,\;{\beta}$-(Cu, Sn) grains dispersed in a glassy matrix. The composite micro- structure can avoid the development of the highly localized shear bands typical for the room temperature defor-mation of monolithic glasses. Instead, widely developed shear bands with evident protuberance are observed. resulting in significant yielding and homogeneous plastic deformation over the entire sample.

• 한국세라믹학회지
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• 제39권1호
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• pp.74-78
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• 2002

본 연구에서는 전구체 용액의 산화환원 발열반응을 이용하여 다성분계 산화물을 제조할 수 있는 용액연소합성법을 이용하여 페로브스카이트 구조 PZT 세라믹스를 합성하고자 하였다. 산화제/환원제 전구체 혼합물의 열분석(DTA/TG) 결과 산화제와 환원제의 열분해 거동의 차이로 인해 214$^{\circ}C$와 35$0^{\circ}C$에서 발열 피크가 나타났다. PZT세라믹스 합성을 위한 승온 과정에서는 37$0^{\circ}C$에서 연소반응이 일어났으나, 페로브스카이트로의 상전이는 일어나지 않았다. 용액연소과정 중 산화제와 연료의 열분해 거동을 고려하여 $600^{\circ}C$에서 제조한 생성물은 결정크기가 50nm인 정방정의 단일상으로 이루어진 PZT세라믹스이었다. 격자상수를 측정한 결과 a는 3.997$\pm$0.001 $\AA$이었으며, c는 4.147$\pm$0.001 $\AA$으로 나타났다.