• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.668-672
• /
• 2003

The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at $500^{\circ}C$. As-fabricated ZnO nanorods had an average diameter and length of 85 nm and 1.7 $\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380 nm and a green emission at around 500 nm.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.666-672
• /
• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.12
• /
• pp.47-54
• /
• 2008

Hard turning process can be defined as a single-point machining process carried out on "hard" materials. The process is intended to replace or limit traditional grinding operations that are expensive, environmentally unfriendly, and inflexible. The purpose of this study is to achieve a systematic understanding of machining characteristics and the effects of machining parameters on cutting force, tool wear shape and chip formation by the outer cutting of a kind of wear resistant tungsten carbide V30. Hard turning experiments were carried out on this alloy using the PCD (Poly Crystalline Diamond), cBN (cubic Boron Nitride) and PcBN (Polycrystalline cubic Boron Nitride) cutting tools. The PcBN and the usual cBN tools were used to be compare with the PCD tool and the dry turning was carried out. The PcBN is attractive as the tool material which replaces the PCD. The tool wear width and cutting force were measured, and the worn tool and chip were observed. The difference of the tool wear mechanism among the three tool materials was investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.576-576
• /
• 2012

High quality single crystalline strain controlled wurtzite ZnO nanowire arrays have been grown on conductive silicon and ITO substrates by a facile hydrothermal method. The diameter of the nanowires was found to be less than 90 nm approximately for both of the two kinds of substrates. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. The structural investigation indicates the preferential orientation of the nanowire along c-axis. In order to make the convincible comparison, the photoluminescence property of the nanowire arrays grown under different conditions are measured, the sharp near band edge emission from PL, low turn-on voltage ($1.9V/{\mu}m$) from field emission measurement and Fowler-Nordheim plot was investigated from ZnO nanowire arrays grown by proposed substrate hanging method.

• Current Photovoltaic Research
• /
• v.6 no.1
• /
• pp.27-30
• /
• 2018

The dependency of the electrical characteristics of silicon solar-cells on the depth of damaged layer induced by wire-sawing process was investigated. To compare cell efficiency with residual sawing damage, silicon solar-cells were fabricated by using as-sawn wafers having different depth of saw damage without any damaged etching process. The damaged layer induced by wire-sawing process in silicon bulk intensely influenced the value of fill factor on solar cells, degrading fill factor to 57.20%. In addition, the photovoltaic characteristics of solar cells applying texturing process shows that although the initial depth of saw-damage induced by wire-sawing process was different, the value of short-circuit current, fill-factor, and power-conversion-efficiency have an almost same, showing ~17.4% of cell efficiency. It indicated that the degradation of solar-cell efficiency induced by wire-sawing process could be prevented by eliminating all damaged layer through sufficient pyramid-surface texturing process.

• Journal of the Korean institute of surface engineering
• /
• v.44 no.1
• /
• pp.7-12
• /
• 2011

The effect of organic additives, polyethylene glycol (PEG), on the trivalent chromium electroplating was analysed in the view point of current efficiency, solution stability and metallurgical structure. It was measured that PEG-containing trivalent chromium solution had about 10% higher current efficiency than pure solution and controlled the micro-crack density of electrodeposits. PEG exhibited profound effect on the solution stability by reducing the consumption rate of formic acid which acts as a complexant to lower the activation energy required for electrochemical reduction of trivalent chromium ions. It was also revealed that the formation of chromium carbide layer was facilitated in the presence of polyethylene glycol, which meant easier electrochemical codeposition of chromium and carbon, not single chromium deposition. Trivalent chromium layer formed from PEG-containing solution was amorphous with local nano-crystalline particles, which were prominently developed on the entire surface after non-oxidative heat treatment.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.97.2-97.2
• /
• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• Journal of the Korean Ceramic Society
• /
• v.45 no.11
• /
• pp.707-712
• /
• 2008

Plasma resistant nanocrystalline $Y_2O_3$ films were deposited on alumina substrates through the electron-beam PVD technique. Increasing substrate temperature to $600^{\circ}C$ resulted in the textured microstructures with significantly enhanced adhesion force of the coating to the substrate. During the exposure to fluorine plasma, erosion rate of the coated specimen was higher than that of a sintered yttria specimen, but significantly lower than that of a single crystalline alumina. Considering the adhesion and erosion behaviors observed in the coated specimen prepared at $600^{\circ}C$, the deposition technique appears effective in reducing contamination particles generated from the ceramic parts in the plasma environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.8
• /
• pp.732-736
• /
• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.11
• /
• pp.3451-3455
• /
• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.