Browse > Article
http://dx.doi.org/10.4191/KCERS.2008.45.1.707

Plasma Resistances of Yttria Deposited by EB-PVD Method  

Kim, Dae-Min (Korea Institute of Ceramic Engineering and Technology)
Yoon, So-Young (Korea Institute of Ceramic Engineering and Technology)
Kim, Kyeong-Beom (Korea Institute of Ceramic Engineering and Technology)
Kim, Hui-Sik (Korea Institute of Ceramic Engineering and Technology)
Oh, Yoon-Suk (Korea Institute of Ceramic Engineering and Technology)
Lee, Sung-Min (Korea Institute of Ceramic Engineering and Technology)
Publication Information
Abstract
Plasma resistant nanocrystalline $Y_2O_3$ films were deposited on alumina substrates through the electron-beam PVD technique. Increasing substrate temperature to $600^{\circ}C$ resulted in the textured microstructures with significantly enhanced adhesion force of the coating to the substrate. During the exposure to fluorine plasma, erosion rate of the coated specimen was higher than that of a sintered yttria specimen, but significantly lower than that of a single crystalline alumina. Considering the adhesion and erosion behaviors observed in the coated specimen prepared at $600^{\circ}C$, the deposition technique appears effective in reducing contamination particles generated from the ceramic parts in the plasma environment.
Keywords
Plasma resistance; Yttria coating; EB-PVD;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 4
연도 인용수 순위
1 Y. Kobayashi, "Current Status and Needs in the Future of Ceramics Used for Semiconductor Production Equipment," pp. 1-7 Proceeding of the 37th seminar on the high temperature ceramics, Ceramic Society of Japan, 2005
2 U. Schulz, C. Leyens, K. Fritscher, M. Peters, B. Saruhan- Brings, O. Lavigne, J.-M. Dorvaux, M. Poulain, R. Mevrel, and M. Caliez, "Some Recent Trends in Research and Technology of Advanced Thermal Barrier Coatings," Aerospace Science and Technology, 7 73-80 (2003)   DOI   ScienceOn
3 G. S. May and C. J. Spanos, "Fundamentals of Semiconductor Manufacturing and Process Control," pp. 98-102, IEEE, New Jersey, 2006
4 A. J. V. Roosmalen, J. A. G. Baggerman, and S. J. H. Brader, "Dry Etching for VLSI," pp. 39-69, Plenum Press, New York and London, 1991
5 J. Iwasawa, R. Nishimizu, M. Tokita, M. Kiyohara, and K. Uematsu, "Plasma Resistant Dense Yttrium Oxide Film Prepared by Aerosol Deposition Process," J. Am. Ceram. Soc., 90 [8] 2327-32 (2007)   DOI   ScienceOn
6 K. Morita, H. Ueno, and H. Murayama, "Plasma Resistant Articles and Production Method Thereof," US patent 6933254 (2005)
7 Y. Kobayashi, M. Ichishima, and Y. Yokoyama, "Plasma Resistant Member," US patent 7090932 (2003)
8 K. Takahashi, M. Okamoto, and M. Abe, "Quartz Glass Parts, Ceramic Parts and Process of Producing Those," US patent 6902814 (2005)
9 L. V. Azaroff, Elements of X-Ray Crystallography; pp. 551- 52 Mcgraw-Hill, New York, 1968
10 J. Singh and D. E. Wolfe, "Nano and Macro-Structured Component Fabrication by Electron Beam-Physical Vapor Deposition (EB-PVD)," J. Mater. Sci., 40 1-26 (2005)   DOI
11 T. H. Nielsen and M. H. Leipold, "Thermal Expansion of Yttrium Oxide and of Magnesium Oxide with Yttrium Oxide," J. Am. Ceram. Soc., 47 [5] 256 (1964)   DOI
12 R. G. Munro, "Evaluated Material Properties for a Sintered Alpha-$Al_2O_3$," J. Am. Ceram. Soc., 80 [8] 1919-28 (1997)   DOI   ScienceOn
13 D. M. Kim, S. M. Lee, S. W. Kim, H. T. Kim, and Y. S. Oh, "Microstructural Changes of the $Al_2O_3$ Ceramics during the Exposure to Fluorine Plasma (in Korean)," J. Kor. Ceram. Soc., 45 [7] 405-10 (2008)   과학기술학회마을   DOI   ScienceOn
14 D. R. Clarke and C. G. Levi, "Materials Design for the Next Generation Thermal Barrier Coatings," Annu. Rev. Mater. Res., 33 383-417 (2003)   DOI   ScienceOn