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http://dx.doi.org/10.21218/CPR.2018.6.1.027

Relation Between Wire Sawing-damage and Characteristics of Single Crystalline Silicon Solar-cells  

Kim, Il-Hwan (Department of Electrics and Computer Engineering, Hanyang University)
Park, Jun-Seong (Department of Electrics and Computer Engineering, Hanyang University)
Park, Jea-Gun (Department of Electrics and Computer Engineering, Hanyang University)
Publication Information
Current Photovoltaic Research / v.6, no.1, 2018 , pp. 27-30 More about this Journal
Abstract
The dependency of the electrical characteristics of silicon solar-cells on the depth of damaged layer induced by wire-sawing process was investigated. To compare cell efficiency with residual sawing damage, silicon solar-cells were fabricated by using as-sawn wafers having different depth of saw damage without any damaged etching process. The damaged layer induced by wire-sawing process in silicon bulk intensely influenced the value of fill factor on solar cells, degrading fill factor to 57.20%. In addition, the photovoltaic characteristics of solar cells applying texturing process shows that although the initial depth of saw-damage induced by wire-sawing process was different, the value of short-circuit current, fill-factor, and power-conversion-efficiency have an almost same, showing ~17.4% of cell efficiency. It indicated that the degradation of solar-cell efficiency induced by wire-sawing process could be prevented by eliminating all damaged layer through sufficient pyramid-surface texturing process.
Keywords
Wire sawing process; saw-damage; Si solar-cell; PV characteristics;
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