• 제목/요약/키워드: Single crystalline

검색결과 679건 처리시간 0.028초

단결정 산화아연 나노선의 기초 물성 연구 (Study on Basic Properties of Single Crystalline ZnO Nanowire)

  • 라현욱;리즈완 칸;김진태;여찬혁;임연호
    • 한국진공학회지
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    • 제18권4호
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    • pp.259-265
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    • 2009
  • 본 연구에서는 열증착법을 이용하여 합성된 단결정의 산화아연 나노선들을 이용하여 전계효과트랜지스터를 제작하여 광학, 표면반응 및 전기화학적인 거동들에 대한 기초 연구들을 수행하였다. 100 nm의 지름과 길이 5 um 길이를 갖는 단결정 산화아연나노선의 전자 농도와 이동도는 각각 $1.30{\times}10^{18}cm^{-3}$$15.6cm^2V^{-1}s^{-1}$이었으며, 자외선을 나노선에 조사한 경우 약 400배 정도 전류가 증가하였다. 또한 나노선들은 여러 농도의 수소와 일산화탄소에 대해 잘 알려진 표면반응으로 기인한 기체 감지 특성을 보였고, 0.1 M NaCl 전해질 내에서 전형적인 산화아연의 나노선의 전기적 특성을 유지함을 확인하였다.

단결정 반금속 비스무스 단일 나노선의 Shubnikov-de Haas 진동 (Shubnikov-de Haas Oscillations in an Individual Single-Crystalline Semimetal Bismuth Nanowire)

  • 김정민;함진희;심우영;이경일;전계진;정원용;이우영
    • 한국재료학회지
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    • 제18권2호
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    • pp.103-106
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    • 2008
  • The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was $0.074^{T-1}$, $0.16^{T-1}$ and $0.77^{T-1}$, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is $0.24^{T-1}$, which is larger than the value of $0.16^{T-1}$ reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.

$SnO_2$ 나노물질의 합성 및 광전류 특성 (Synthesis of $SnO_2$ nanomaterials and their Optoelectronic properties)

  • 심성규;이종수;조용민;김경환;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.70-73
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    • 2004
  • Two different $SnO_2$ nanomaterials(nanowires and nanobelts) were synthesized from the thermal evaporation of ball-milled $SnO_2$ powders at $1350^{\circ}C$ without the presence of any catalysts, and their structural properties are then investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. This investigation reveals that the $SnO_2$ nanowires are single-crystalline and their growth direction is parallel to the [100] direction, and that the $SnO_2$ nanobelts are single crystalline and their shape is zigzag. In addition, photoresponse of a single $SnO_2$ nanowire was performed with light above-gap energy, and different characteristics of photoresponse were obtained for the nanowire at ambient atmosphere and in vacuum.

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Exploring the Properties and Potential of Single-crystal NCM 811 for Lithium-ion Batteries

  • Yongseok Lee;Seunghoon Nam
    • Corrosion Science and Technology
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    • 제22권1호
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    • pp.36-43
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    • 2023
  • Single-crystal Ni-rich NCM is a material that has drawn attention in the field of lithium-ion batteries due to its high energy density and long cycle life. In this study, we investigated the properties of single-crystal NCM 811 and its potential for use in lithium-ion batteries. High-quality single crystals of NCM 811 were successfully synthesized by crystal growth via a flux method. The single-crystal nature of the samples was confirmed through detailed characterization techniques, such as scanning electron microscopy and x-ray diffraction with Rietveld refinement. The crystal structure and electrochemical performances of the single-crystal NCM 811 were analyzed and compared to its poly-crystal counterpart. The results indicated that single-crystal NCM 811 had electrochemical performance and thermal stability superior to poly-crystalline NCM 811, making it a suitable candidate for high-performance batteries. The findings of this study contribute to a better understanding of the characteristics and potential of single-crystal NCM 811 for lithium-ion batteries.

자발 성장법으로 성장된 단결정 Bi 단일 나노선의 정상 자기 저항 특성 (Ordinary Magnetoresistance of an Individual Single-crystalline Bi Nanowire)

  • 심우영;김도헌;이경일;전계진;이우영;장준연;한석희;정원용
    • 한국자기학회지
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    • 제17권4호
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    • pp.166-171
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    • 2007
  • 단결정 Bi단일 나노선의 정상 자기 저항(ordinary magnetoresistance) 특성을 $2{\sim}300K$에서 4 단자법으로 측정하였다. I-V 측정을 통해 전기적 오믹 형성을 확인하였고, 2 K과 300 K에서 비저항이 각각 $1.0{\times}10^{-4}$$8.2{\times}10^{-5}{\Omega}{\cdot}cm$으로 측정되었다. 수직(transverse) 및 수평(longitudinal) 자기저항비(MR ratio)가 110 K와 2 K에서 각각 현재까지 보고된 MR 중 가장 큰 2496%와 -38%으로 관찰되었으며, 이 결과는 자발 성장법으로 성장된 Bi 나노선의 결정성이 매우 우수한 단결정임을 증명한다. simple two band(STB) 모델을 통해 Bi 나노선의 수직 및 수평 정상 자기 저항(OMR) 거동이 온도에 따른 페르미 준위(Fermi level)와 밴드 겹침(band overlap)등의 전자 구조 변화 및 운반자 농도 변화로 잘 설명된다.

Microstructural Evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl High Entropy Alloys

  • Hyun, Jae Ik;Kong, Kyeong Ho;Kim, Kang Cheol;Kim, Won Tae;Kim, Do Hyang
    • Applied Microscopy
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    • 제45권1호
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    • pp.9-15
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    • 2015
  • In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).

Industry Applicable Future Texturing Process for Diamond wire sawed Multi-crystalline Silicon Solar Cells: A review

  • Ju, Minkyu;Lee, Youn-Jung;Balaji, Nagarajan;Cho, Young Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • 제6권1호
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    • pp.1-11
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    • 2018
  • Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

$Al_2O_3/SiN_x$ 후면 적층 패시베이션을 이용한 결정질 실리콘 태양전지의 효율 향상 연구 (Efficiency Improvement with $Al_2O_3/SiN_x$ Rear Passivation of p-type Mono-crystalline Silicon Solar Cells)

  • 천주용;백신혜;김인섭;천희곤
    • 반도체디스플레이기술학회지
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    • 제12권3호
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    • pp.47-51
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    • 2013
  • Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

Spin-On Dopants를 이용한 결정질 실리콘 태양전지의 n+ 에미터 형성에 관한 연구 (Investigation of n+ Emitter Formation Using Spin-On Dopants for Crystalline Si Solar Cells)

  • 조경연;이지훈;최준영;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.68-69
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    • 2007
  • To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

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결정의 슬립을 고려한 금속의 미시적 소성변형거동 해석(I) (Analysis of Microscopic Plastic Behaviors of metals considering slip deformation of crystals(I))

  • 김정석;정기조;김영석
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1996년도 춘계학술대회논문집
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    • pp.55-61
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    • 1996
  • Finite element calculations are performed for crystalline solids subjected to plane strain tensile loading. Using Asaro's double slop model, shearband developments in single crystals are analyzed. The effect of various rate sensitivities and latent hardening parameters on microscopic plastic behavior was clarified. Moreover the deformation behavior of polycystals which have grain boundaries was compared to that of single crystals.

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