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http://dx.doi.org/10.3740/MRSK.2008.18.2.103

Shubnikov-de Haas Oscillations in an Individual Single-Crystalline Semimetal Bismuth Nanowire  

Kim, Jeong-Min (Department of Materials Science and Engineering, Yonsei University)
Ham, Jin-Hee (Department of Materials Science and Engineering, Yonsei University)
Shim, Woo-Young (Department of Materials Science and Engineering, Yonsei University)
Lee, Kyoung-Il (Department of Materials Science and Engineering, Yonsei University)
Jeon, Kye-Jin (Department of Materials Science and Engineering, Yonsei University)
Jeung, Won-Young (Korea Institute of Science and Technology (KIST))
Lee, Woo Young (Department of Materials Science and Engineering, Yonsei University)
Publication Information
Korean Journal of Materials Research / v.18, no.2, 2008 , pp. 103-106 More about this Journal
Abstract
The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was $0.074^{T-1}$, $0.16^{T-1}$ and $0.77^{T-1}$, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is $0.24^{T-1}$, which is larger than the value of $0.16^{T-1}$ reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.
Keywords
single-crystalline Bi nanowire; magnetoresistance (MR); shubnikov-de haas oscillations (SdH); spatial confinement effect; landau energy level;
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