• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.742-750
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• 2018

In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

• Proceedings of the KSRS Conference
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• 1998.09a
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• pp.186-191
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• 1998

The first step in change detection in any SAR monitoring, including SAR interferometry, is the co-registration of the images. CCPs (Ground Control Points) for co-registration are usually detected manually, but for qualitative analyses of enormous volumes of data, some automation of the process will become necessary. An automated determination of common CCPs for the same path/row data is especially desirable. We selected the intersections of linear features as the candidates of common GCPs Very bright point targets, which are commonly used as GCPs, have the drawback of appearing and disappearing depending on the conditions of the observation. But in the case of linear features, some detailed elements may appear differently in some case, but the overall line-likeness will remain. In this study, we selected 18 common GCPs for a single-look JERS-1 SAR image of Omaezaki area in central Japan. Although the GCPs in the first image had to be selected either interactively or semi-automatically, the same GCPs in all other images were successively detected automatically using a tiny sub-image around each GCP and a dilated mask of each linear feature in the first image as the reference data.

• Journal of Internet Computing and Services
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• v.20 no.6
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• pp.29-36
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• 2019

When dealing with outdoor images in a variety of computer vision applications, the presence of shadow degrades performance. In order to understand the information occluded by shadow, it is essential to remove the shadow. To solve this problem, in many studies, involves a two-step process of shadow detection and removal. However, the field of shadow detection based on CNN has greatly improved, but the field of shadow removal has been difficult because it needs to be restored after removing the shadow. In this paper, it is assumed that shadow is detected, and shadow-less image is generated by using original image and shadow mask. In previous methods, based on CGAN, the image created by the generator was learned from only the aspect of the image patch in the adversarial learning through the discriminator. In the contrast, we propose a novel method using a discriminator that judges both the whole image and the local patch at the same time. We not only use the residual generator to produce high quality images, but we also use joint loss, which combines reconstruction loss and GAN loss for training stability. To evaluate our approach, we used an ISTD datasets consisting of a single image. The images generated by our approach show sharp and restored detailed information compared to previous methods.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.75-81
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• 1998

This paper is to optimize single-element piezoresistor shear stress strain gauge related to aspect ratio of rectangular diaphragm. The shear stress distribution on diaphragm has been simulated by finite-element method(FEM). As simulation results, the maximum sensitivity for strain gauge was appeared at the center of diaphragm with aspect ratio 3, and in along to long edge with the ratio 2. The diaphragm with ratio 2 is not acceptable due to the yield of mask alignment in IC process technology. The optimum condition of diaphragm with respect to good sensitivity was realized in the case of ratio 3. In this case, the area by gauge was 8% of overall size of rectangular diaphragm.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.101-109
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• 2004

This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the extended sacrificial bulk micromachining (extended SBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one mask. The fabricated accelerometer has the structure thickness of $30{\mu}m$, the vertical offset of $12{\mu}m$, and lateral gap between electrodes of $4{\mu}m$. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be $500{\mu}g$ and $748{\mu}g$. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18% FSO, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.384-390
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• 2008

Chaotic OOK modulation method can be used in LDR(Low Data Rate) UWB systems. In this paper, UWB chaotic-OOK transmitter system is designed and verified using TSMC 0.18 um CMOS process. A transmitter system is composed of Quasi-chaotic signal generator, OOK Modulator, and driving amplifier. The traditional chaotic signal generators using analog feedback method is weak to process variation. In order to solve this problem, a quasi-chaotic signal generator using digital feedback technique is get wide band signal and OOK Modulator using T-type switching structure is used to enhance the isolation characteristic. A driving amplifier has differential to single structure to avoid an external balun for low cost communication. The measured output power spectrum of the transmitter meet the FCC regulation and the result of the modulation test at data rate of 20 Kbps, 200 Kbps, 2 Mbps, and 10 Mbps is conformed to LDR UWB system. It is shown that the transmitter in this paper can be used for the UWB chaotic-OOK system.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.1-8
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• 2001

Conventional microgyroscopes of vibrating type require resonant frequency tuning of the driving and sensing modes to achieve high sensitivity. These tuning conditions depend on each fabricated microgyroscopes, even though the microgyroscopes are identically designed. A new micromachined resonator, which is applicable to microgyroscopes with self-toning characteristics, is presented. Since the laterally driven two degrees of freedom (2DOF) resonator was designed as a symmetric structure with identical stiffness in two orthogonal axes, the resonator is applicable to vibrating microgyroscopes, which do not need mode tuning. A dynamic model of the resonator was derived considering gyroscopic application. The dynamic model was evaluated by experimental comparison with fabricated resonators. The microgyroscopes were fabricated using a simple 2-mask-process of a single polysilicon layer deposited on an insulator layer. The feasibility of the resonator as a vibrating microgyroscopes with self-tuning capability is discussed. The fabricated resonators of a particular design have process-induced non-uniformities that cause different resonant frequencies. For several resonators, the standard deviations of the driving and sensing frequencies were as high as 1232Hz and 1214Hz, whereas the experimental average detuning frequency was 91.75Hz. The minimum detuned frequency was 68Hz with $0.034mVsec/^{\circ}$ sensitivity. The sensitivity of the microgyroscopes was low due to process-induced non-uniformity; the angular rate bandwidth, however, was wide. This resonator could be successfully applicable to a vibrating microgyroscopes with high sensitivity, if improvements in uniformity of the fabrication process are achieved. Further developments in improved integrated circuits are expected to lower the noise level even more.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.