• Proceedings of the KSME Conference
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• 2003.04a
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• pp.119-124
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• 2003

In this study, retardation behavior of fatigue crack under single overloading of the mixed mode I+II state was experimentally investigated. To produce single overload in the mixed mode I+II state, the compact tension shear (CTS) specimen and loading device were used. The propagation tests for fatigue crack were performed under mode I loading overloading afterwards. We examined the observed deformation aspects, variation of fatigue life and crack propagation rate, and the aspects of retardation behavior from tests. The retardation effect of mixed-mode single overload on fatigue crack propagation behavior was smaller than that of mode I single overload. It has been confirmed that the retardation behavior did not immediately appear and the retardation length was short when the component of mixed-mode overload was changed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1508-1512
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• 2003

In this study, retardation behavior of fatigue crack under single overloading of the mixed mode state was experimentally investigated. To produce single overload in the mixed mode I+II state, the compact tension shear (CTS) specimen and loading device were used. The propagation tests for fatigue crack were performed under mode I and mixed-mode loading overloading afterwards. We examined the observed deformation aspects, the variation of fatigue life and crack propagation rate, and the aspects of retardation behavior from tests. The retardation effect of mixed-mode single overload on fatigue crack propagation behavior was smaller than that of mode I single overload. Also the loading modes of variable and constant amplitude loads have influence on the retardation behavior of fatigue cracks.

• ETRI Journal
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• v.26 no.6
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• pp.575-582
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• 2004

Fully-depleted silicon-on-insulator (FD-SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the single- raised (SR) and double-raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self-heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self-heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a $1.1\;{\mu}m^2$ 6T-SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra-thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.724-729
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• 2010

We have proposed a new configuration on the cathode structure to improve a neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. A neutron yield in the IEC device is closely related to the potential well structure generated inside the cathode and is proportional to the ion current. Therefore, the application of a double grid cathode structure to the IEC device is expected to produce a higher ion current and neutron yield than at a single grid cathode due to a high electric field strength generated around the cathode. These possibilities were verified as compared with the ion current calculated from both shape of the single and double grid cathode. Additionally from the results of ion's lives and trajectories examined at various outer cathode voltages and grid cathode configurations by using particle simulations, the validity of the double grid cathode was confirmed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.7
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• pp.935-944
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• 2017

As augmented reality technology has developed, various augmented reality contents can be seen in real life, and the performance of mobile device is improved, so augmented reality technology can be used even without special device. As a result, a training system, guidance system and a museum art guide system based on augmented reality technology are emerging, and interest in augmented reality is also increasing. However, the existing guidance systems using a single mobile device have limitations in terms of the user experience (UX) because the camera of the device limits the field of view or the two hands are not free and the user input is difficult. In this paper, we compare augmented reality based guidance systems for Rubik's Cube using tablet and HMD to improve the constraint of user experience of such a single mobile device, and find elements that positively improve user experience. After that, we evaluate whether the user experience is actually improved through the user experience comparison test and the questionnaire.

• Journal of Chest Surgery
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• v.57 no.2
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• pp.205-212
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• 2024

Background: Postoperative atrial fibrillation (A-fib) is a serious complication of cardiac surgery that is associated with increased mortality and morbidity. Traditional 24-hour Holter monitors have limitations, which have prompted the development of innovative wearable electrocardiogram (ECG) monitoring devices. This study assessed a patch-type wearable ECG device (MobiCARE-MC100) for monitoring A-fib in patients undergoing cardiac surgery and compared it with 24-hour Holter ECG monitoring. Methods: This was a single-center, prospective, investigator-initiated cohort study that included 39 patients who underwent cardiac surgery between July 2021 and June 2022. Patients underwent simultaneous monitoring with both conventional Holter and patchtype ECG devices for 24 hours. The Holter device was then removed, and patch-type monitoring continued for an additional 48 hours, to determine whether extended monitoring provided benefits in the detection of A-fib. Results: This 72-hour ECG monitoring study included 39 patients, with an average age of 62.2 years, comprising 29 men (74.4%) and 10 women (25.6%). In the initial 24 hours, both monitoring techniques identified the same number of paroxysmal A-fib in 7 out of 39 patients. After 24 hours of monitoring, during the additional 48-hour assessment using the patch-type ECG device, an increase in A-fib burden (9%→38%) was observed in 1 patient. Most patients reported no significant discomfort while using the MobiCARE device. Conclusion: In patients who underwent cardiac surgery, the mobiCARE device demonstrated diagnostic accuracy comparable to that of the conventional Holter monitoring system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.632-639
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• 2014

Mechanical stress and the vacuum level are the two main factors dominating the quality factor of a resonator operated in the vacuum range 1 mTorr to 10 Torr. This means that if the quality factor of a resonator is very insensitive to the mechanical stress in the vacuum range, it is sensitive to mainly the ambient vacuum level. In this paper, a wafer-level packaged MEMS resonator with a highly vacuum-sensitive quality factor is presented. The proposed device is characterized by a package with out-of-plane symmetry and a suspending structure with only a single anchor. Out-of-plane symmetry helps prevent deformation of the packaged device due to thermal mismatch, and a single-clamped structure facilitates constraint-free displacement. As a result, the proposed device is very insensitive to mechanical stress and is sensitive to mainly the ambient vacuum level. The average quality factors of the devices packaged under pressures of 50, 100, and 200 mTorr were 4987, 3415, and 2127, respectively. The results demonstrated the high controllability of the quality factor by vacuum adjustment. The mechanical robustness of the quality factor was confirmed by comparing the quality factors before and after high-temperature storage. Furthermore, through more than 50 days of monitoring, the stability of the quality factor was also certified.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.13-21
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• 1992

We have constructed the magneto-operational amplifier(MOP) using the advantages of Hall device and an operational amplifier. The MOP necessarily requires a high impedance circuit, a differential-to-single-ended convert-sion circuit and feedback-input-element for operational amplifier characteristics. We have presented a new differential-to-single-ended conversion operational amplifier(DSCOP) having such characteristics. We have designed the MOP using the DSCOP and Hall device and simulated its characteristics, and finally we have constructed the system with discrete elements, and measured its magnetic characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.