• 제목/요약/키워드: Single Crystal Structure

검색결과 838건 처리시간 0.03초

MgO 또는 ZnO를 첨가한 $LiNbO_{3}$ 단결정 성장 및 특성 : (I) 단결정 성장 및 결함구조 (Single crystals growth and properties of $LiNbO_{3}$ doped with MgO or ZnO : (I) Single crystals growth and their defect structure)

  • 조현;심광보;오근호
    • 한국결정성장학회지
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    • 제6권3호
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    • pp.368-376
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    • 1996
  • 균일한 조성과 doping 효과를 얻을 수 있는 floating zone(FZ)법으로 조화용융조성의 undoped $LiNbO_{3}$ 및 5 mol%의 MgO 또는 ZnO를 각각 첨가한 $LiNbO_{3}$ 단결정을 육성하였다. 결정성장시 최적성장조건을 실험적으로 확립하였으며, 결정내에 존재하는 domain 구조, 전위구조, slip band, 미세쌍정등의 결함구조를 조사 및 분석하였다.

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$\gamma$-FIB를 이용한 Single Crystal MgO Energy Band Structure 측정

  • 최준호;이경애;손창길;홍영준;최은하
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.420-420
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    • 2010
  • AC PDP에서 유전체 보호막으로 사용되는 MgO 박막은 높은 이차전자방출계수($\gamma$)로 인해 방전전압을 낮춰주는 중요한 역할을 하고 있다. 이러한 MgO 보호막의 이차전자방출계수를 증가시키기 위해 MgO 의 Energy Band Structure 규명이 중요한 연구 주제가 되고 있다. MgO의 이차전자방출계수($\gamma$)는 Auger 중화 이론에 의해 방출 메커니즘이 설명이 되고, 그 원리는 다음과 같다. 고유의 이온화 에너지를 가진 이온이 MgO 표면에 입사 되면, Tunneling Effect에 의해 전자와 이온 사이에 중화가 일어나고, 중화가 되고 남은 에너지가 MgO Valance Band 내의 전자에게 전달되면 이때 남은 에너지(${\Delta}E$)가 MgO의 일함수(Work function) 보다 크게 되면 이차전자로 방출된다. 본 실험 에서는 $\gamma$-FIB System을 이용하여 결정 방향이 (100), (110), (111)을 갖는 Single Crystal MgO에 이온화 에너지가 24.58eV인 He Ion source를 주사 하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 MgO 내의 Energy Band Structure를 실험적으로 측정하였다. 이를 통해 MgO Single Crystal의 일함수 및 Defect Level의 분포를 확인하였다.

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The Crystal Structure of Licarin-B $(C_{20}H_{20}O_4)$, A Component of the Seeds of Myristica fragrans

  • Kim, Yang-Bae;Park, Il-Yeong;Shin, Kuk-Hyun
    • Archives of Pharmacal Research
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    • 제14권1호
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    • pp.1-6
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    • 1991
  • The crystal structure of licarin-B, a component of Myristicae Semen was determined by single crystal X-ray diffraction analysis. Crystal of the compound, which was recrystallized from the mixture of hexane and ether, is monoclinic with a=12.740(1), b=7.219(1), c=9.284(1) ${\AA}$, ${\beta}=94.75(1)^{\circ}$, $D_x=1.26$, $D_m=1.27\;g/cm^3$, space group P21, and Z=2. The structure was solved by direct method and refined by least-squares procedure to the final R value of 0.040 for 1532 independent reflections ${F{\ge}3{\sigma}(F)}$. The compound is a dimeric phenylpropanoid, and belongs to the neolignan analogues. The molecules are arranged along with the screw axis. The intermolecular contacts appear to be the normal van der Waals' forces.

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The Crystal Structure of KR-27042, An Analgesic Capsaicinoid

  • Park, No-Sang;Kim, Yang-Bae;Jeong, Eun-Ju;Chung, Uoo-Tae;Park, Il-Yeong
    • Archives of Pharmacal Research
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    • 제25권1호
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    • pp.25-27
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    • 2002
  • The crystal structure of KR-21042, N-(3-Phenylpropyl )-4-hydroxy-3-methoxyphenylacetamide, was determined by single crystal X-ray diffraction analysis. The compound was recrystallized from a mixture of ethylacetate and n-hexane in monoclinic, space group $P2_1/c$, with a = 16.622(1), b = 6.215(1), c = 15.802(1) ${\AA},{\;}{\beta}=104.97(1)$, and Z = 4 The calculated density is $1.261{\;}g/cm^3$The structure was solved by the direct method and refined by full matrix least-squares procedure to the fecal R value of 0.068 for 2332 observed reflections.

The crystal structure of pirprofen$(C_{3},\; H_{14},\; ClNO_2$), a non-steroidal antiinflammmatory agent

  • Kim, Yang-Bae;Park, Il-Yeong
    • Archives of Pharmacal Research
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    • 제19권1호
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    • pp.71-73
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    • 1996
  • The molecular structure of pirprofen, 3-chloro-4-(2,5-dihydro-1H-pyrrol-1-yl)-.alpha.-methyl-benzeneacetic acid, was determined by single crystal X-ray diffraction analysis. The compound was recrystallized from a mixture of chloroform and toluene in triclinic, space group P over $\bar1,\; with\; a=4.577(1),\; b=11.213(2),\; C=12.485(2){\AA},\alpa.=107.39(1),\;\beta=97.79(1),\;\gamma=92.03(2),\; and Z=2$ The calculated density is $1.384 g/cm^3$. The structure was solved by the direct method and refined by full matrix least-squares procedure to the final R value of 0.034 for 1681 independent reflections. The non-aromatic dihydropyrrol group is found to be coplanar to the central aromatic ring. The molecules are dimerized through the intermolecular hydrogen bonds at the carboxyl group in the crystal.

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$\alpha$-sulfur 단결정의 광학적 특성에 관한 연구 (Oprical Properties of $\alpha$-Sulfur Single Crystal)

  • 송호준;김화택;이정순
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.442-446
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    • 1998
  • $\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

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Hot Wall Epitaxy (HWE)법에 의해 성장된 $ZnIn_2S_4$ 에피레이어의 전기적 특성 (Electrical properties for $ZnIn_2S_4$ epilayers grown by Hot Wall Epitaxy)

  • 이상열;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.143-144
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    • 2008
  • Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.

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Synthesis, Optical and Electrical Studies of Nonlinear Optical Crystal: L-Arginine Semi-oxalate

  • Vasudevan, P.;Sankar, S.;Jayaraman, D.
    • Bulletin of the Korean Chemical Society
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    • 제34권1호
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    • pp.128-132
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    • 2013
  • L-Arginine semi-oxalate (LASO) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Photoluminescence studies confirm the violet fluorescence emission peak at 395 nm. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV-VIS-NIR spectrum. The dielectric constant, dielectric loss and ac conductivity of the compound were calculated at different temperatures and frequencies to analyze the electrical properties. The solid state parameters such as plasma energy, Penn gap, Fermi energy and polarizability were calculated to analyze second harmonic generation (SHG). Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal.

결정성 아날심(|Na0.94(H2O)|[Si2.06Al0.94O6]-ANA)의 합성 및 단결정구조: 양이온 및 물 분자의 위치, Si/Al 비의 결정 (Synthesis of Single Crystalline Analcime and Its Single-crystal Structure, |Na0.94(H2O)|[Si2.06Al0.94O6]-ANA: Determination of Cation Sites, Water Positions, and Si/Al Ratios)

  • 서성만;서정민;고성운;임우택
    • 대한화학회지
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    • 제55권4호
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    • pp.570-574
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    • 2011
  • 최대 0.20 mm 크기를 가진 아날심 단결정은 $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA의 겔 조성으로부터 합성되어졌다. $Na^+$ 이온으로 완전히 이온교환 된 아날심은 0.1 M 농도의 NaCl 수용액으로부터 준비하였다(이온교환용액의 pH는 NaOH 용액을 첨가하여 6에서 11로 맞추었다). $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]-ANA(a=13.703(3){\AA})$의 분자식을 가지는 수화된 아날심 단결정의 구조는 294 K에서 Ibca의 orthorhombic 공간군으로 단결정 X-선 회절기법에 의해 결정되었다. 결정 구조의 최종 에러값은 $R_1/wR_2$= 0.054/0.143에 수렴되었다. 약 15개의 $Na^+$ 이온이 팔면체 배위로 3군데의 비동등한 위치에서 발견되었다. 합성된 아날심의 화학적 조성은 $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$ 확인되었으며, Si/Al 비는 단결정 구조 정밀화를 통하여 찾은 양이온의 점유수인 14.79개에 의해 2.19로 결정되었다.

Growth of Oriented Thick Films of BaFe12O19 by Reactive Diffusion

  • Fisher, John G.;Vu, Hung;Farooq, Muhammad Umer
    • Journal of Magnetics
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    • 제19권4호
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    • pp.333-339
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    • 2014
  • Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.