Electrical properties for $ZnIn_2S_4$ epilayers grown by Hot Wall Epitaxy

Hot Wall Epitaxy (HWE)법에 의해 성장된 $ZnIn_2S_4$ 에피레이어의 전기적 특성

Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.