• 한국수자원학회논문집
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• 제41권8호
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• pp.807-823
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• 2008

수위-유량 관계 곡선을 나타내는 곡선식에 포함되어 있는 매개변수의 추정을 위해 많이 사용되는 로그선형 회귀분석은 잔차의 비등분산성(heteroscedasticity)을 고려하지 못하므로 본 연구에서는 의사우도추정법(pseudolikelihood estimation, P-LE)에 의해 분산함수를 추정하고 이와 함께 회귀계수를 추정할 수 있는 방법을 제시하였다. 이 과정에서 제시된 회귀잔차를 최소화하기 위하여 SA(simulated annealing)이라는 전역 최적화 알고리즘을 적용하였다. 또한 수위-유량 관계 곡선은 단면 등의 영향으로 인해 구간에 따라 각각 다르게 구축되어져야 하므로 이를 보다 객관적으로 판단하고 분리 위치를 추정하기 위하여 Heaviside 함수를 의사우도함수에 포함시켜 결과를 추정하도록 하였으며, 2개의 구간을 가지는 유량자료를 이용하여 제시된 방법의 합리성을 통계적으로 실험하였다. 이와 같이 통계적 실험을 통해 제시된 방법들이 기존 방법과 비교하여 가질 수 있는 장점을 파악하였으며, 제시된 방법들을 금강유역 5개 지점에서 대해 수행하여 효율성을 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.131-131
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• 2008

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used a Monte-Carlo method. We studied the effect of channeling by Al implantation simulation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the Al distribution in 4H-SiC through the variation of the implantation energies and the corresponding ratio of the doses. The implantation energies controlled 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2\times10^{14}$ to $1\times10^{15}cm^{-2}$. In the simulation results, the Al ion distribution was deeper as increasing implantation energy and the doping level increased as increasing implantation doses. After the post-implantation annealing, the electrical properties of Al-implanted p-n junction diode were investigated by SILV ACO ATLAS numerical simulator.

• 센서학회지
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• 제14권2호
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• 한국자동차공학회논문집
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• 제15권1호
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• pp.8-15
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• 2007

Freeway corridors consist of urban freeways and parallel arterials that drivers can use alternatively. Ramp metering in freeways and signal control in arterials are contemporary traffic control methods that have been developed and applied in order to improve traffic conditions of freeway corridors. However, most of the existing studies have focused on either optimal ramp metering in freeways, or progression signal strategies between arterial intersections. There have been no traffic control systems in Korea that integrates the freeway ramp metering and arterial signal control. The effective control strategies for freeway operations may cause negative effects on arterial traffic. On the other hand, traffic congestion and bottleneck phenomenon of arterials due to the increasing peak-hour travel demand and ineffective signal operation may generate an accessibility problem to freeway ramps. Thus, the main function of the freeway which is the through-traffic process has not been successful. The purpose of this study is to develop an integrated control model that connects freeway ramp metering systems and signal control systems in arterial intersections. And Optimization of integrated control model which consists of ramp metering and signal control is another purpose. The design of experiment, neural network, and simulated annealing are used for optimization.

• 한국재료학회지
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• 제5권1호
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• pp.42-54
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• 1995

$Ta_2O_5$박막은 고유전율의 특성으로 차세대 DRAM캐패시터 물질로 유망받고 있는 물질이다. 본 연구에서는 p-type(100)Si 웨이퍼 위에 열 MOCVD 방법으로 $Ta_2O_5$박막을 성장시켰으며 기판온도, 버블러 온도, 반응압력의 조업조건이 미치는 영향을 고찰하엿다. 증착된 박막은 SEM, XRD, XPS, FT-IR, AES, TEM, AFM을 이용하여 분석하였으며 질소나 산소 분위기의 furnace 열처리 (FA)와 RTA(Rapid Thermal Annealing)를 통하여 열처리 효과를 살펴보았다. 반응온도에 따른 증착속도는 300 ~ $400 ^{\circ}C$ 범위에서 18.46kcal/mol의 활성화 에너지를 가지는 표면반응 율속단계와 400 ~ $450^{\circ}C$ 범위에서 1.9kcal/mol의 활성화 에너지를 가지는 물질전단 율속단계로 구분되었다. 버블러 온도는 $140^{\circ}C$일때 최대의 증착속도를 보였다. 반응압력에 따른 증착속도는 3torr에서 최대의 증착속도를 보였으나 굴절율은 0.1-1torr사이에 $Ta_2O_5$의 bulk값과 비슷한 2.1정도의 양호한 값이 얻어졌다. $400^{\circ}C$에서 층덮힘은 85.71%로 매우 양호하게 나타났으며 몬테카를로법에 의한 전산모사 결과와의 비교에 의해서 부착계수는 0.06으로 나타났다. FT-IR, AES, TEM 분석결과에 의하여 Si와 $Ta_2O_5$ 박막 계면의 산화막 두께는 FA-$O_{2}$ > RTA-$O_{2}$ ~ FA-$N_{2}$ > RTA-$N_{2}$ 순으로 성장하였다. 하지만 질소분위기에서 열처리한 박막은 산소분위기의 열처리경우에 비해 박막내의 산소성분의 부족으로 인한 그레인 사이의 결함이 많이 관찰되었다.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• Journal of Radiation Protection and Research
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• 제28권2호
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• pp.87-95
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• 2003

반도체 검출기의 p+ 층의 도핑 농도, 열처리에 의한 불순물 재분포와 절단면에서의 guard ring 효과를 전산모사하여 최적의 구조와 공전을 설계하고, MCNP코드로 방사선 반응 특성을 분석하였다. 검출기는 반도체 집적회로 공정에서 설계된 공정변수를 적용하여 격자 방향 <100>, $400{\Omega}cm$, n형, Floating-Zone 실리콘 기판에서 제작되었다. 제작된 검출기의 누설전류 밀도는 $0.7nA/cm^2/100{\mu}m$로서 전기적 특성이 우수한 것으로 나타났으며, Cs-137 감마 선원에 의한 $5mR/h{\sim}25R/h$의 조사선량률 범위에서 방사선 반응 특성은 양호한 선형성을 보였다. 본 연구에서 제안된 공정으로 제작된 PIN 반도체 검출기는 개인선량 측정에 사용될 수 있을 것이다.

• Nuclear Engineering and Technology
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• 제54권8호
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• pp.3051-3058
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• 2022

In the present work, untreated Iraqi sand with grain sizes varied between 100 and 200 ㎛ was used to produce a colored glass sample that has shielding features against the low gamma-ray energy. Therefore, a weight of 70-60 wt % sand was mixed with 9-14 wt% B₂O₃, 8-10 wt% Na₂O, 4-6 wt% of CaO, 3-6 wt% Al₂O₃, in addition to 0.3% of Co₂O₃. After melting and annealing the glass sample, the X-ray diffraction spectrometry was applied to affirm the amorphous phase of the fabricated glass samples. Moreover, the X-ray dispersive energy spectrometry was used to measure the chemical composition, and the MH-300A densimeter was applied to measure the fabricated sample's density. The Makishima-Makinzie model was applied to predict the mechanical properties of the fabricated glass. Besides, the Monte Carlo simulation was used to estimate the fabricated glass sample's radiation shielding capacity in the low-energy region between 22.1 and 160.6 keV. Therefore, the simulated linear attenuation coefficient changed between 10.725 and 0.484 cm^-1, raising the gamma-ray energy between 22.1 and 160.6 keV. Also, other shielding parameters such as a half-value layer, pure lead equivalent thickness, and buildup factors were calculated.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• 한국광학회지
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• 제14권4호
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• pp.377-382
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• 2003

본 논문에서는 이진 위상 홀로그램과 간섭계를 이용하여 디지털 데이터의 저작권을 보호할 수 있는 새로운 워터마킹 방법을 제안하였다. 먼저, SA알고리듬을 이용하여 숨겨질 마크영상의 이진 위상 홀로그램을 설계하였다. 이를 원 영상에 선형중첩 시킴으로써 워터마킹된 영상을 얻었다. 워터마킹된 영상에서 마크영상을 추출하기 위한 복호화 과정은 경로차가 같도록 구성된 마흐-젠더 간섭계를 이용하여 워터마킹된 영상의 위상변조 성분과 위상변조된 원 영상과의 간섭세기론 역푸리에 변환 함으로써 얻었다. 제안된 방법은 임의의 절단된 영상에 대해서 강인함을 컴퓨터 모의실험을 통해 확인하였으며, 위상 변조 특성이 있는 LCD를 사용하여 광학적으로 구현하였다.