• Electronics and Telecommunications Trends
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• v.37 no.3
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• pp.11-22
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• 2022

The development and application of silicon photonics technology to terabit optical transmission are expected in the future. Silicon photonics technology is recognized as the only technology focusing on increasing the bandwidth of data center switches. High-density integration-based small optical subassemblies, optical engines, and optical transceivers are converged with the silicon photonics technology to accelerate a revolution in optical interfaces.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

• Korean Journal of Materials Research
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• v.34 no.8
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• pp.395-399
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• 2024

Among various organic materials suitable for silicon-based inorganic-organic hybrid solar cells, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has been extensively studied due to its high optical transmittance, high work function, and low bandgap characteristics. The electro-optical properties of PEDOT:PSS have a significant impact on the power conversion efficiency of silicon-organic hybrid solar cells. To enhance the photovoltaic properties of the silicon-organic hybrid solar cells, we developed a method to improve the properties of the PEDOT:PSS film using Ag nanowires (NW) instead of conventional solvent addition methods. The influence of the Ag NW on the electro-optical property of the PEDOT:PSS film and the photovoltaic performance of the silicon-organic hybrid solar cells were investigated. The addition of Ag NW further improved the sheet resistance of the PEDOT:PSS film, enhancing the performance of the silicon-organic hybrid solar cells. The present work using the low sheet resistance PEDOT:PSS layer paves the way to develop simple yet more efficient silicon-organic hybrid solar cells.

• Electronics and Telecommunications Trends
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• v.5 no.1
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• pp.55-70
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• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.23-24
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• 2014

• ETRI Journal
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• v.36 no.2
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• pp.301-308
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• 2014

Three-dimensional integration technology results in area savings, platform power savings, and an increase in performance. Through-silicon via (TSV) assembly and manufacturing processes can potentially introduce defects. This may result in increases in manufacturing and test costs and will cause a yield problem. To improve the yield, spare TSVs can be included to repair defective TSVs. This paper proposes a new built-in self-test feature to identify defective TSV channels. For defective TSVs, this paper also introduces dynamic self-repair architectures using code-based and hardware-mapping based repair.

• Journal of Power Electronics
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• v.13 no.4
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.113-120
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• 2005

Luminous efficiency and uniformity in a LCD-BLU are mainly determined by fine scattering patterns formed on the light guide panel. We propose a novel fabrication method of 3-dimensional scattered patterns based on anisotropic etching of silicon wafers. Micro-pyramid patterns with 70.5 degree apex-angle and micro-prism patterns with 109.4 degree apex-angle can be self-constructed by the wet, anisotropic etching of (100) and (110) silicon wafers, respectively, and those patterns are easily duplicated by the PDMS replica process. Experimental results on spatial and angular distributions of irradiation from the light guide panel with the micro-pyramid patterns were very consistent with the calculation results. Surface roughness of the silicon-based micro-patterns is free from any artificial defects since the micro-patterns are inherently formed with silicon crystal surfaces. Therefore, we expect that the silicon based micro-patterning process makes it possible to fabricate perfect 3-dimensional micro-structures with crystal surface and apex angles, which may guarantee mass-reproduction of the light guide panels in LCD-BLU.

• Journal of Integrative Natural Science
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• v.8 no.1
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• pp.67-74
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• 2015

Sensing characteristics for porous smart particle based on DBR smart particles were reported. Optically encoded porous silicon smart particles were successfully fabricated from the free-standing porous silicon thin films using ultrasono-method. DBR PSi was prepared by an electrochemical etch of heavily doped $p^{++}$-type silicon wafer. DBR PSi was prepared by using a periodic pseudo-square wave current. The surface-modified DBR PSi was prepared by either thermal oxidation or thermal hydrosilylation. Free-standing DBR PSi films were generated by lift-off from the silicon wafer substrate using an electropolishing current. Free-standing DBR PSi films were ultrasonicated to create DBR-structured porous smart particles. Three different surface-modified DBR smart particles have been prepared and used for sensing volatile organic vapors. For different types of surface-modified DBR smart particles, the shift of reflectivity mainly depends on the vapor pressure of analyte even though the surfaces of DBR smart particles are different. However huge difference in the shift of reflectivity depending on the different types of surface-modified DBR smart particles was obtained when the vapor pressures are quite similar which demonstrate a possible sensing application to specify the volatile organic vapors.

• Journal of Electrochemical Science and Technology
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• v.7 no.3
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• pp.228-233
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• 2016

It is hard to employ the carbon materials or the lithium metal foil for the anode of lithium sulfur batteries because of the poor passivation in ether-based electrolytes and the formation of lithium dendrites, respectively. Herein, we investigated the electrochemical characteristics of lithium sulfur batteries with lithiated silicon anode in the liquid electrolytes based on ether solvents. The silicon anodes were lithiated by direct contact with lithium foil in a 1M lithium bis(trifluoromethane sulfonyl) imide (LiTFSI) solution in 1,2-dimethoxyethane (DME) and 1,3-dioxolane (DOL) at a volume ratio of 1:1. They were readily lithiated up to ~40% of their theoretical capacity with a 30 min contact time. In particular, the carbon mesh reported in our previous work was employed in order to maximize the performance by capturing the dissolved polysulfide in sulfur cathode. The reversible specific capacity of the lithiated silicon-sulfur batteries with carbon mesh was 1,129 mAh/g during the first cycle, and was maintained at 297 mAh/g even after 50 cycles at 0.2 C, without any problems of poor passivation or lithium dendrite formation.