• Title/Summary/Keyword: Silicon-Based

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ZnO Nanostructure Characteristics by VLS Synthesis (VLS 합성법을 이용한 ZnO 나노구조의 특성)

  • Choi, Yuri;Jung, Il Hyun
    • Applied Chemistry for Engineering
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    • v.20 no.6
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    • pp.617-621
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    • 2009
  • Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

Evaluation of Applicability of penetrating-type Nano-Coat for Preventing Deterioration of Concrete (침투형 Nano-Coat를 이용한 콘크리트 열화 방지 적용성 평가)

  • Lee, Jun Hee;Kim, Jo Soon;Sim, Yang Mo;Lee, Seung Woo
    • International Journal of Highway Engineering
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    • v.19 no.2
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    • pp.7-15
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    • 2017
  • PURPOSES : Infiltration of moisture, polluted material, and deicer into concrete, accompanied by freeze and thaw can cause significant deterioration of concrete pavement. In order to protect concrete from deterioration, it is necessary to prevent the infiltration of these concrete external materials. The moisture-repellent agent, which is a surface treatment and maintenance material added to concrete structures to render them water resistant, has advantages such as prevention of water infiltration and security against air permeation. Nano-coat, which is referred to as silicon hydride, is typically used as a moisture-repellent agent. Therefore, in this study, an attempt is made to use penetration-type Nano-coat as an alternative in order to evaluate its applicability through environmental resistance tests. METHODS : This study aimed to evaluate the applicability of penetration-type Nano-coat, which can provide water repellency to concrete, in concrete pavements, through various environmental resistance tests such as freezing and thawing resistance, chloride ion penetration resistance, and surface scaling resistance tests. The applicability of penetration-type Nano-coat was demonstrated based on the specification of KS F 2711, KS F 2456, and ASTM C 672. RESULTS :In the case of penetration-type Nano-coat applied on sound concrete, an increase in concrete durability was demonstrated by the negligible chloride ion penetrability and the absence of scaling, as revealed by visual observation of the surface, after 50 cycles of scaling resistance test. In addition, test result of the application of penetration-type Nano-coat on deteriorated concrete established that concrete surface pretreated by grinding provided improved durability than non-treated concrete. CONCLUSIONS :This study indicates that penetration-type Nano-coat is applicable as an effective alternative, to increase the durability of concrete structures. In addition, it was known that pretreatment of deteriorated concrete surface, such as grinding, is required to improve the long-term performance of concrete pavement.

Moisture Diffusion Analysis for Bendable Electronic Module Under Autoclave Test Condition (유연성 전자모듈에 대한 오토클레이브 시험조건에서의 습기확산해석)

  • Han, Chang-Woon;Oh, Chul-Min;Hong, Won-Sik
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.5
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    • pp.523-528
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    • 2012
  • A bendable electronic module is developed for a mobile application by using a low-cost roll-to-roll manufacturing process. In the module, a thin silicon chip is embedded in a polymer-based encapsulating adhesive between flexible copper clad polyimide layers. A set of tests are conducted for the purpose of qualification: thermal shock, high temperature storage, and autoclave tests. During the autoclave test, delamination occurs at many places within the module layers. To investigate the failure mechanism, moisture diffusion analysis is conducted for the interior of the module under the autoclave test condition. For the analysis, the hygroscopic characteristics of the encapsulating materials are experimentally determined. Analysis results indicate the moisture saturation process in the interior of the module under the autoclave test condition.

Modulation of Defect States in Co- and Fe-implanted Silicon by Rapid Thermal Annealing

  • Lee, Dong-Uk;Lee, Kyoung-Su;Pak, Sang-Woo;Suh, Joo-Young;Kim, Eun-Kyu;Lee, Jae-Sang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.314-314
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    • 2012
  • The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

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SIMS Depth Profiling Analysis of Cl in $TiCl_4$ Based TiN Film by Using $ClCs_2^+$ Cluster Ions

  • Gong, Su-Jin;Park, Sang-Won;Kim, Jong-Hun;Go, Jung-Gyu;Park, Yun-Baek;Kim, Ho-Jeong;Kim, Chang-Yeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.161-161
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    • 2012
  • 질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$$NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

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NANO-SIZED COMPOSITE MATERIALS WITH HIGH PERFORMANCE

  • Niihara, N.;Choa, H.Y.;Sekino, T.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 1996.11a
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    • pp.6-6
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    • 1996
  • Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.

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The Development of Gamma Energy Identifying Algorithm for Compact Radiation Sensors Using Stepwise Refinement Technique

  • Yoo, Hyunjun;Kim, Yewon;Kim, Hyunduk;Yi, Yun;Cho, Gyuseong
    • Journal of Radiation Protection and Research
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    • v.42 no.2
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    • pp.91-97
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    • 2017
  • Background: A gamma energy identifying algorithm using spectral decomposition combined with smoothing method was suggested to confirm the existence of the artificial radio isotopes. The algorithm is composed by original pattern recognition method and smoothing method to enhance the performance to identify gamma energy of radiation sensors that have low energy resolution. Materials and Methods: The gamma energy identifying algorithm for the compact radiation sensor is a three-step of refinement process. Firstly, the magnitude set is calculated by the original spectral decomposition. Secondly, the magnitude of modeling error in the magnitude set is reduced by the smoothing method. Thirdly, the expected gamma energy is finally decided based on the enhanced magnitude set as a result of the spectral decomposition with the smoothing method. The algorithm was optimized for the designed radiation sensor composed of a CsI (Tl) scintillator and a silicon pin diode. Results and Discussion: The two performance parameters used to estimate the algorithm are the accuracy of expected gamma energy and the number of repeated calculations. The original gamma energy was accurately identified with the single energy of gamma radiation by adapting this modeling error reduction method. Also the average error decreased by half with the multi energies of gamma radiation in comparison to the original spectral decomposition. In addition, the number of repeated calculations also decreased by half even in low fluence conditions under $10^4$ ($/0.09cm^2$ of the scintillator surface). Conclusion: Through the development of this algorithm, we have confirmed the possibility of developing a product that can identify artificial radionuclides nearby using inexpensive radiation sensors that are easy to use by the public. Therefore, it can contribute to reduce the anxiety of the public exposure by determining the presence of artificial radionuclides in the vicinity.

뉴로모픽 시스템용 시냅스 트랜지스터의 최근 연구 동향

  • Nam, Jae-Hyeon;Jang, Hye-Yeon;Kim, Tae-Hyeon;Jo, Byeong-Jin
    • Ceramist
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    • v.21 no.2
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    • pp.4-18
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    • 2018
  • Lastly, neuromorphic computing chip has been extensively studied as the technology that directly mimics efficient calculation algorithm of human brain, enabling a next-generation intelligent hardware system with high speed and low power consumption. Three-terminal based synaptic transistor has relatively low integration density compared to the two-terminal type memristor, while its power consumption can be realized as being so low and its spike plasticity from synapse can be reliably implemented. Also, the strong electrical interaction between two or more synaptic spikes offers the advantage of more precise control of synaptic weights. In this review paper, the results of synaptic transistor mimicking synaptic behavior of the brain are classified according to the channel material, in order of silicon, organic semiconductor, oxide semiconductor, 1D CNT(carbon nanotube) and 2D van der Waals atomic layer present. At the same time, key technologies related to dielectrics and electrolytes introduced to express hysteresis and plasticity are discussed. In addition, we compared the essential electrical characteristics (EPSC, IPSC, PPF, STM, LTM, and STDP) required to implement synaptic transistors in common and the power consumption required for unit synapse operation. Generally, synaptic devices should be integrated with other peripheral circuits such as neurons. Demonstration of this neuromorphic system level needs the linearity of synapse resistance change, the symmetry between potentiation and depression, and multi-level resistance states. Finally, in order to be used as a practical neuromorphic applications, the long-term stability and reliability of the synapse device have to be essentially secured through the retention and the endurance cycling test related to the long-term memory characteristics.

A Study on Perpendicular Flame Retardant Characteristic Improvement of Halogen-free Flame Retardant Compounds by Nanoclay Addition (나노클레이 첨가에 따른 할로겐프리 난연컴파운드의 수직난연 특성 향상에 관한 연구)

  • Hwang, Chan-Yun;Yang, Jong-Seok;Seong, Baeg-Yong;Kim, Ji-Yeon;Park, Dae-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.1
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    • pp.51-56
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    • 2015
  • The object of this study is to obtain the optimum mix proportion of halogen free compound with flame resistance and, for the purpose, thermal/electrical characteristics test are conducted using compatibilizing agents, flame resistance agents, hydroxide aluminum, sunscreen, antioxidant and silicon oil on the base resin of linear low density polyethylene (LLDPE), Ethylene vinyl acetate copolymer (EVA). Existing compound method accompanies many requirements to be satisfied including a lot of addition of flame resistance agents, prohibition of impact on mixing capability with base and property and etc. In this study, different from the existing method, the optimum mix proportion is determined and experimented by adding nano clay. Oxygen index test shows no difference between specimens while T-6, T-9 shows oxygen index of 29[%] and 26[%], respectively. This is concluded that hydroxide aluminum, which is a flame resistance agent, leads low oxygen index. From UL94-V vertical flame resistance test, the combustion behavior is determined as V-0, Fail based on UL94-V decision criteria. Viscometry shows low measurements in specimens with separate addition of compatibilizing agents or nano clay. Volume resistivity test shows low measurement mainly in specimens without compatibilizing agents. Therefore, with the flame resistance compound shows better performance for thermal/electrical property and the optimum mix proportion are achieved among many existing materials.

Neural Network Structure and Parameter Optimization via Genetic Algorithms (유전알고리즘을 이용한 신경망 구조 및 파라미터 최적화)

  • 한승수
    • Journal of the Korean Institute of Intelligent Systems
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    • v.11 no.3
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    • pp.215-222
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    • 2001
  • Neural network based models of semiconductor manufacturing processes have been shown to offer advantages in both accuracy and generalization over traditional methods. However, model development is often complicated by the fact that back-propagation neural networks contain several adjustable parameters whose optimal values unknown during training. These include learning rate, momentum, training tolerance, and the number of hidden layer neurOnS. This paper presents an investigation of the use of genetic algorithms (GAs) to determine the optimal neural network parameters for the modeling of plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide films. To find an optimal parameter set for the neural network PECVD models, a performance index was defined and used in the GA objective function. This index was designed to account for network prediction error as well as training error, with a higher emphasis on reducing prediction error. The results of the genetic search were compared with the results of a similar search using the simplex algorithm.

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