• Korean Journal of Materials Research
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• v.27 no.5
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• pp.263-269
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• 2017

Fe-Si-Cr ferroalloy is predominantly produced by carbothermic reduction. In this study, silicothermic and carbothermic mixed reduction of chromite ore to produce Fe-Si-Cr alloy is suggested. As reductants, silicon and silicon carbide are evaluated by thermochemical calculations, which prove that silicon carbide can be applied as a raw material. Considering the critical temperature of the change from the carbide to the metallic form of chromium, thereduction experiments were carried out. In these high temperature reactions, silicon and silicon carbide act as effective reductants to produce Fe-Si-Cr ferroalloy. However, at temperatures lower than the critical temperature, silicon carbide shows a slow reaction rate for reducing chromite ore. For the proper implementation of a commercial process that uses silicon carbide reductants, the operation temperature should be kept above the critical temperature. Using equilibrium calculations for chromite ore reduction with silicon and silicon carbide, the compositions of reacted metal and slag were successfully predicted. Therefore, the mass balance of the silicothermic and carbothermic mixed reduction of chromite ore can be proposed based on the calculations and the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.413-413
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• 2009

Silicon nanowires (Si NWs)-based top-gate field-effect transistors (FETs) are constructed by using Si NWs transferred onto flexible plastic substrates. Si NWs are obtained from the silicon wafers using photolithography and anisotropic etching process, and transferred onto flexible plastic substrates. To evaluate the electrical performance of the silicon nanowires, we examined the output and transfer characteristics of a top-gate field-effect transistor with a channel composed of a silicon nanowire selected from the nanowires on the plastic substrate. From these FETs, a field-effect mobility and transconductance are evaluated to be $47\;cm^2/Vs$ and 272 nS, respectively.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2909-2912
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• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• Journal of Surface Science and Engineering
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• v.55 no.6
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• pp.441-447
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• 2022

Silicon-based materials are one of the most promising anode active materials in lithium-ion battery. A carbon layer decorated on the surface of silicon particles efficiently suppresses the large volume expansion of silicon and improves electrical conductivity. Carbon coating through chemical vapor deposition (CVD) is one of the most effective strategies to synthesize carbon- coated silicon materials suitable for mass production. Herein, we synthesized carbon coated SiOx via pilot scale CVD reactor (P-SiO_x@C) and carbon coated SiO_x via industrial scale CVD reactor (I-SiO_x@C) to identify physical characteristic changes according to the CVD capacity. Reduced size silicon domains and local non-uniform carbon coating layer were detected in I-SiO_x@C due to non-uniform temperature distribution in the industrial scale CVD reactor with large capacity, resulting in increased surface area due to severe electrolyte consumption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.23-28
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• 2023

This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

• Journal of the Korea Fashion and Costume Design Association
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• v.21 no.4
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• pp.213-220
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• 2019

The dry cleaning effect related to the type of soil and fiber was analyzed using silicone and alcohol-based solvents(ethyl alcohol, isopropyl alcohol, acetone) that are relatively safe for the human body and environment to improve the detergency of hydrophilic soils in dry cleaning system. Based on this analysis, an effective dry cleaning method to be carried out for improving the detergency according to the type of hydrophilic soils. After dry cleaning was performed using 20 types of artificial soiled fabrics consisting of 7 types of fibers and 4 types of hydrophilic soils, the detergency was measured and the results were compared and analyzed by solvents and fiber types. The results are presented as follows; first, the detergency of hydrophilic soils using silicone solvents showed a low rate of detergency. In particular, the tannin soil showed a lower level of detergency compared to the protein soil. Second, the detergency of hydrophilic soils using silicon solvents with dry soap differed in some detergency according to the soil and fiber types. Especially, the detergency of curry soil on cotton fabric showed significant improvement. Third, the protein soil was not removed from dry cleaning using alcohol-based solvents, but the effect of dry cleaning of curry soil on both cotton and polyester fabric was substantially improved. As a result, the elimination of blood soil is more effective in silicon solvents than in alcohol-based solvents. The removal of tannin soils may improve detergency by adding dry soap to silicon solvents or by using alcohol-based solvents as alternative solvents. The use of alternative solvents such as silicon and alcohol solvents can contribute to the environmental improvement of the dry cleaning industry, which uses petroleum-based solvents. It is also expected to provide consumers with the opportunity to choose eco-friendly and efficient dry cleaning methods.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.3
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• pp.26-34
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• 1999

A new silicon-based IC interconnect transmission line parameter extraction methodology is presented and experimentally examined. Unlike the PCB or MCM interconnects, a dominant energy propagation mode in the silicon-based IC interconnects is not quasi-TEM but slow wave mode(SWM). The transmission line parameters are extracted taking the silicon substrate effect (i.e., slow wave mode) into account. The capacitances are calculated considering silicon substrate surface as a ground. Whereas the inductances are calculated by using an effective dielectric constant. In order to verify the proposed method, test patterns were designed. Experimental data have agreement within 10%. Further, crosstalk noise simulation shows excellent agreements with the measurements which are performed with high-speed time domain measurement ( i.e., TDR/TDT measurements) for test pattern, while RC model or RLC model without silicon substrate effect show about 20~25% underestimation error.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.