• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.969-974
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• 2003

A simple and cost-effective method for the electrostatic suspension of thin plates like silicon wafers is proposed which is based on a switched voltage control scheme. It operates according to a relay feedback control and deploys only a single high-voltage power supply that can deliver a dc voltage of positive and/or negative polarity. This method possesses the unique feature that no high-voltage amplifiers are needed which leads to a remarkable system simplification relative to conventional methods. It is shown that despite the inherent limit cycle property of the relay feedback based control, an excellent performance in vibration suppression is attained due to the presence of a relatively large squeeze film damping origination from the air between the electrodes and levitated object. Using this scheme, a 4-inch silicon wafer was levitated stably with airgap variation decreasing down to 1 $\mu\textrm{m}$ at an airgap of 100 $\mu\textrm{m}$

• Journal of the Korean Society for Precision Engineering
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• v.22 no.10 s.175
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• pp.56-64
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• 2005

A simple and cost-effective method for the electrostatic suspension of thin plates like silicon wafers is proposed which is based on a switched voltage control scheme. It operates according to a relay feedback control and deploys only a single high-voltage power supply that can deliver a DC voltage of positive and/or negative polarity. This method possesses the unique feature that no high-voltage amplifiers are needed which leads to a remarkable system simplification relative to conventional methods. It is shown that despite the inherent limit cycle property of the relay feedback based control, an excellent performance in vibration suppression is attained due to the presence of a relatively large squeeze film damping origination from the air between the electrodes and levitated object. Using this scheme, a 4-inch silicon wafer was levitated stably with airgap variation decreasing down to $1 {\mu}m$ at an airgap of $100{\mu}m$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.747-748
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.807-808
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.355-356
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.739-740
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.729-730
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• 2010

• Journal of Powder Materials
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• v.23 no.1
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• pp.43-48
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• 2016

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.5-8
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• 2009

In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.

• IE interfaces
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• v.18 no.3
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• pp.234-246
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• 2005

A silicon wafer is a highly customized product made to the individual order varying its electrical and physical characteristics. Therefore, it has distinctive supply chain structure that is different from highly standardized commodity product. For high-volume/high-standardization product, it is general that a main stream of information flow initiated by the production planning of the manufacturers is usually directed to push both ways in a supply chain: upstream to the suppliers and downstream to the customers. Contrastingly, for low-volume/high-customization product, the information flow triggered by the fluctuating customer demand usually propagates upward to the suppliers through the manufacturers. Furthermore, for R &D based hi-technology product like silicon wafer, the interactive information feedback mechanism between manufacturer and customer, which is essential to the new product development process, is to be embedded in the supply chain. This article is a case study of supply chain management system of LG Siltron, a major Korean silicon wafer manufacturer. The SCM system entails special information structure fitting well typical high-variety/high-customization product, and also gives application possibilities to the R&D based high-technology product made to the individual customer order.