• ETRI Journal
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• v.25 no.2
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.115-121
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• 1994

Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.481-488
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• 2004

Laser chemical vapor deposition can be used as a new approach for a rapid prototyping technique. The purpose of the study is to fabricate several 3-dimensional objects that are relatively simple as well as to find the characteristics of SiC rod growth that is the first step in developing a new rapid prototyping technique with laser chemical vapor deposition. In the study, SiC rods were generated with varying precursor pressure for 5 minutes. Deposition rates with varying precursor pressure, shapes of rods, surface roughness and component organization were investigated, in particular. Finally, several simple objects like a branch or a propeller were successfully fabricated using laser chemical vapor deposition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.1 s.232
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• pp.14-21
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• 2005

Laser chemical vapor deposition can be an effective technique for a rapid prototyping with ceramic materials, in particular. The objective of the study is to fabricate several 3-dimensional objects by stacking multi-layers as well as to find out some basic aspects of a rapid prototyping with laser chemical vapor deposition such as deposition characteristics with traversing speed of the laser, possible problems in stacking multi-layers etc. The limit speed of the laser that can grow a tilted SiC rod was found in this study, and laser directing writing that occurs over the limit speed was also investigated. Finally, a zigzag-shaped rod, a spiral-shaped rod, a wall and a square duct were successfully fabricated with laser chemical vapor deposition of tetramethylsilane

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.168-173
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• 2010

Novel porous silicon chip exhibiting dual optical properties, both Frbry-Perot fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type sillicon wafer (boron-doped, <100> orientation, resistivity 1 - 10 ${\Omega}$). The ething solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF (48% by weight). The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Ething was carried out as a two-electrode Kithley 2420 preocedure at an anodic current. The surface of porous silicon was characterized by FT-IR instrument. The porosity of samples was about 80%. Three different types of porous silicon, fresh porous silicon (Si-H termianated), oxidized porous silicon (Si-OH terminated), and surface-derivatized porous silicon (Si-R terminated), were prepared by the thermal oxidation and hydrosilylation. Then the samples were exposed to the wapor of various organics vapors. such as chloroform, hexane, methanol, benzene, isopropanol, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic wapors.