• 전자공학회논문지A
• /
• 제29A권1호
• /
• pp.33-40
• /
• 1992

4인치(100) 실리콘 기판상에 센서용 다이아프램을 제조할 때 생기는 식각 현상들을 관찰하고 분석하였다. 115$^{\circ}C$의 "F etch' 용액을 사용하여 300$\mu$ 이상의 깊은 식각을 행하였을 때 식각 표면에 발생하느 식각 결함은 hillock, 반응 생성물, 그리고 횐색 잔유물로 구분될 수 있었따. 특히 hillock의 경우 식각 표면에 부착된 반응 생성물의 밀도나 크기에 관계하여 |111|면들로 이루어질는 피라밋 구조나 사다리꼴 육면체등의 형태를 취함이 확인되었다. 또한 용해된 실리콘의 국부적인 과잉 포활 발생하는 흰색 잔유물의 IR 흡수 스펙트럼을 조사한 결과, Si-N-O 성분에 미량의 h와 C가 포함된 것임을 알 수 있었다. 아울러 식각면을 식각용액에 대해 아래쪽, 위쪽, 그리고 측면을 향하도록 놓았을때 식각 결함의 존재 확률과 분포 그리고 식각율의 분포를 비교한 결과 식각율의 균일성면에서는 하측방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가 유리하게 나타났으며 이를 반응조내의 흐름 패턴을 이용하여 해석하였다.

• 마이크로전자및패키징학회지
• /
• 제22권1호
• /
• pp.51-54
• /
• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• 한국재료학회지
• /
• 제8권3호
• /
• pp.200-205
• /
• 1998

질화규소-질화붕소 복합재료의 접촉하중에 의한 손상거동을 질화붕소 첨가량의 함수로 고찰하였다. Indentation응력-변형율 곡선은 선형성을 벗어나 소성 특성을 갖는 재료임이 밝혀졌으며, 재료 표면으로 부터의 ring이나 cone형상의 균열 대신 표면하부에 전단응력에 의한 마이크로 크기의 준소성 변형 영역이 넓게 형성되어 손상저항성이 높은 재료로의 활용이 기대되었다. 이 때 마이크로 파괴와 연관된 shear faults가 이 재료의 소성을 갖도록 하는데 중요한 역할을 하였다. 질화붕소의 첨가량이 증가함에 따라 질화규소-질화붕소 재료는 보다 soft해지고 준소성의 특성을 나타내었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.210-210
• /
• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• The Journal of Advanced Prosthodontics
• /
• 제8권4호
• /
• pp.275-284
• /
• 2016

PURPOSE. The aim of this study was to evaluate the influence of different surface treatment methods on the microtensile bond strength of resin cement to resin nanoceramic (RNC). MATERIALS AND METHODS. RNC onlays (Lava Ultimate) (n=30) were treated using air abrasion with and without a universal adhesive, or HF etching followed by a universal adhesive with and without a silane coupling agent, or tribological silica coating with and without a universal adhesive, and divided into 6 groups. Onlays were luted with resin cement to dentin surfaces. A microtensile bond strength test was performed and evaluated by one-way ANOVA and Tukey HSD test (${\alpha}$=.05). A nanoscratch test, field emission scanning electron microscopy, and energy dispersive X-ray spectroscopy were used for micromorphologic analysis (${\alpha}$=.05). The roughness and elemental proportion were evaluated by Kruskal-Wallis test and Mann-Whitney U test. RESULTS. Tribological silica coating showed the highest roughness, followed by air abrasion and HF etching. After HF etching, the RNC surface presented a decrease in oxygen, silicon, and zirconium ratio with increasing carbon ratio. Air abrasion with universal adhesive showed the highest bond strength followed by tribological silica coating with universal adhesive. HF etching with universal adhesive showed the lowest bond strength. CONCLUSION. An improved understanding of the effect of surface treatment of RNC could enhance the durability of resin bonding when used for indirect restorations. When using RNC for restoration, effective and systemic surface roughening methods and an appropriate adhesive are required.

• 한국표면공학회지
• /
• 제46권1호
• /
• pp.29-35
• /
• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Corrosion Science and Technology
• /
• 제7권6호
• /
• pp.315-318
• /
• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.

• 한국광학회지
• /
• 제18권2호
• /
• pp.149-154
• /
• 2007

저가의 소자 개발이 가능한 나노임프린팅 공정을 도입하여 510 nm 주기의 브래그 격자 구조를 가지는 폴리머 광도파로 소자를 제작하였다. 폴리머 격자 광소자의 온도 의존성을 감소시키기 위한 방법으로 플라스틱 박막으로 이루어진 유연성 기판상에 브래그 격자를 제작하는 것이 필요하다. 임프린팅 공정을 손쉽게 수행하기 위한 광도파로 구조를 채택하였으며, 코아와 클래딩의 굴절률이 각각 1.540, 1.430인 폴리머를 이용하여 코아 두께가 $3{\mu}m$인 단일모드 광도파로 구조를 얻을 수 있었다. 유연성 기판 브래그 격자 광도파로 소자의 특성을 Si기판 브래그 격자 광도파로 소자와 비교하여 관측한 결과, 유연성 기판 도입에 따른 브래그 반사 소자의 성능 저하는 나타나지 않았다.

• 대한전자공학회논문지SD
• /
• 제41권3호
• /
• pp.9-14
• /
• 2004

본 논문에서는 압저항 압력센서 응용을 위한 최적의 멤브레인 구조를 만들기 위하여 tetramethylammonium hydroxide (TMAH)/ammonium persulfate (AP)/isopropyl alcoho 1(IPA) 용액의 Si 이방성 식각 특성을 연구하였다. 독성이 적고 CMOS 공정과의 높은 호환성 때문에 TMAH를 Si 이방성 식각용액으로 사용하였다. 식각온도, TMAH농도 및 식각시간에 따른 Si 식각률의 변화를 측정하였다. 식각온도를 증가 시키고 TMAH농도를 감소시킴에 따라 Si 식각률은 증가한 반면에 (100)면에 hillock 이 생겨 식각표면의 평탄도가 감소하였다. TMAH 에 IPA 용액을 첨가하면 식각표면의 평탄도를 증가 시키나 Si의 식각률을 감소 시켰다. 그러나, TMAH 에 AP 용액을 첨가하면 Si의 식각률과 식각표면의 평탄도 모두를 증가시켰다. 또한 시간당의 AP 첨가 횟수를 증가시킴으로서 Si 식각률을 최대화시킬 수 있었다. TMAH/AP 용액의 최적의 Si 식각조건을 적용하여 한변의 길이가 100∼400㎛이고 두께가 20㎛인 정사각형 모양의 Si 멤브레인을 성공적으로 제작하였다.

• Restorative Dentistry and Endodontics
• /
• 제17권1호
• /
• pp.95-103
• /
• 1992

The purpose of this study was to evaluate the effect of the dentin pretreatment on the marginal leakage of a glassionomer cement. 1n this study, 60 molars with sound and healthy crown portion were used. The dentin surface of these teeth were exposed and polished with 600 grit silicon carbide paper. Square - shaped cavities were prepared on the flattened dentin surfaces and these were divided into 4 groups according to the dentin pretreatment procedures. Group I : Dentin pretreatment with distilled water as a control group. Group II : Dentin pretreatment with 5% sodium hypochlorite solution. Group III : Dentin pretreatment with Ketac conditioner. Group IV : Dentin pretreatment with 40% polyacrylic acid. The degrees of dye penetration in the cavity walls were assessed using a stereoscope at ${\times}40$ magnification according to the maximum dye penetration. The results were analyzed by using Mann - Whitney U test. The results were as follows : 1. All groups showed varying depth of dye penetration. 2. Distilled water group showed the most severe marginal leakage when compared with the other groups(P<0.05). 3. 40% polyacrylic acid group showed the least amount of marginal leakage compared with the other groups (P<0.05). 4. There were significant differences between Goup I(distilled water) and Group IV (40% polyacrylic acid)(P<0.05), but there were no significant differences among Group I(distilled water), Group II(sodium hypochlorite), Group III(Ketac conditioner) (P>0.05).