• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.45-48
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• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.

• 한국세라믹학회지
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• 제33권12호
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• pp.1380-1386
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• 1996

The effects of urea addition and reaction conditions were examined in the prepareation of zirconia coated SiC whiskers through surface precipitation taking place during high-temperature aging of Zr(SO4)2 solutions containing the whiskers. More dense zirconia-hydrate was precipitated on the surfaces of the whiskers in the presence of urea. The ratio of the concentration of Zr(SO4)2 to the amount of added whiskers was the most important factor to confine the precipitation of zirconia-hydrate only at the surfaces of the whiskers The from of the coating layers was unchanged after heat-treatment leading to the dehydration and crystallization of the layers.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.13-18
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• 2001

In this paper, FFT(Fast Fourier Transform) analysis of friction was suggested as a method to interpret the contact conditions. Micro-grooves with various dimensions were fabricated on the silicon surface to investigate the frictional behavior with respect to the change in geometrical contact condition. Frictional forces between micro-grooved surfaces and spheres modeled as surface asperities were measured using a micro-tribotester which was built inside a SEM(Scanning Electron Microscope). The experimental results show that the relative dimensions and distributions of contact asperities between two surfaces can be predicted by the power spectrum and the main frequency in FFT-based analysis of friction coefficient. Also, it was shown that the friction coefficient for multi-asperities was the result of the superposition of that for each asperity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.334-337
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• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.

• Nuclear Engineering and Technology
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• 제43권3호
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• pp.205-216
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• 2011

Recently, many research studies have investigated the enormous critical heat flux (CHF) enhancement caused by nanofluids during pool boiling and flow boiling. One of the main reasons for this enhancement is nanoparticle deposition on the heated surface. However, in real applications, nanofluids create many problems when used as working fluids because of sedimentation and aggregation. Therefore, artificial surfaces on silicon and metal have been developed to create an effect similar to that of nanoparticle deposition. These modified surfaces have proved capable of greatly increasing the CHF during pool boiling, and good results have also been observed during flow boiling. In this study, we demonstrate that the wetting ability of a surface, i.e., wettability, and the liquid spreading ability (hydrophilic surface property), are key parameters for increasing the CHF during both pool and flow boiling. We also demonstrate that when the fuel surface in nuclear power plants is modified in a similar manner, it has the same effect, producing a large CHF enhancement.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• 한국표면공학회지
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• 제29권5호
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제33회 춘계학술대회 개최
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• pp.127-134
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• 2001

Nano adhesion and friction between a Sj$_3$N$_4$ AFM tip and thin silver films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Thin silver films deposited by IBAD (ion beam assisted deposition) on Si-wafer (100) and Si-wafer of different surface roughness were used. Results showed that nano adhesion and friction decreased as the surface roughness increased. When the Si surfaces were coated by pure silver, the adhesion and friction decreased. But the adhesion and friction were not affected by the thickness of IBAD silver coating. As the normal force increased, the adhesion forces of bare Si-wafer and IBAD silver coating film remained constant, but the friction forces increased linearly. Test results suggested that the friction was mainly governed by the adhesion as long as the normal load was low.

• Korean Chemical Engineering Research
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• 제56권3호
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• pp.303-308
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• 2018

본 연구에서는 리튬이차전지 음극활물질인 Silicon/Carbon (Si/C) 복합소재를 제조하여 바인더 및 첨가제가 전지성능에 미치는 영향을 조사하였다. Si/C 합성물은 마그네슘의 열 환원 반응을 통해 SBA-15 (Santa Barbara Amorphous material No. 15)를 제조한 후 페놀 수지의 탄화 과정을 통해 합성하였다. Si/C 음극소재는 충 방전, 순환전압전류, 임피던스 테스트를 통해 전기화학적 성능을 분석하였다. PAA 바인더를 이용한 Si/C 전지의 용량은 1,899 mAh/g으로 다른 바인더를 사용한 합성물보다 우수하였으며, 40 사이클 동안 92%에 달하는 높은 용량 보존율을 나타내었다. 또한, VC 첨가제를 사용한 전지의 경우 3,049 mAh/g의 높은 초기용량을 나타내며, 실리콘 표면에 보호막을 형성해 초기 비가역용량을 감소시켜줌을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.