• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.35-42
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• 2001

Nanotribological characteristics between a Si$_3$N$_4$ AFM tip and hydrophobic thin films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Plasma-modified thin polymeric films were deposited on Si-wafer (100). Results showed that wetting angle of plasma-modified thin polymeric film increased with the treating time, which resulted in the hydrophobic surface and the decrease of adhesion and friction. Nanotribological characteristics of these surfaces were compared with those of other hydrophobic surfaces, such as DLC, OTS and IBAD-Ag coated surfaces. Those of OTS coated surface was superior to those of others, though wetting angle of plasma-modified thin polymeric film is higher.

• 한국전기전자재료학회논문지
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• 제26권10호
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• 한국재료학회지
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• 제15권3호
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• 한국광학회지
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• 제16권2호
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• pp.113-120
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• 2005

LCD-BLU(liquid crystal device-back light unit)에 사용되는 도광판의 미세 산란패턴을 만드는 새로운 방법으로서, 실리콘 웨이퍼의 비등방 식각에 의해 자연적으로 형성되는 3차원 결정면 구조를 이용하는 방법을 제안하였다. 실리콘 3차원 결정면을 갖는 도광판과 프리즘 시트의 원판을 설계 및 제작하였고, casting 공정을 통해 PDMS 재질로 복제된 도광판을 제작하여 특성을 분석하였다. 측정 결과, 기존 인쇄형 도광판에 비해 실리콘피라미드 패턴의 도광판이 $10\%$ 증가된 정면 휘도 효율을 가질 수 있음을 실험적으로 검증하였다.

• 한국안광학회지
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• 제15권4호
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• pp.329-337
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• 2010

목적: RGP 콘택트렌즈들의 성분과 표면을 일관된 방법으로 분석하여, RGP 렌즈 재료의 성분 설계에 기본 정보를 제시하고자 하였다. 방법: 렌즈 재료의 구조는 적외선분광(FTIR), 표면 조성은 X-선 광전자분광(XPS), 표면의 형상과 거칠기는 원자현미경(AFM), 습윤성은 접촉각으로 평가하였으며, 상호관계와 경향을 분석하였다. 결과: 산소투과성이 높은 RGP 렌즈들은 불소를 줄이고, 실리콘의 양을 증가시키는 경향을 나타냈다. RGP 렌즈들의 재료는 실리콘과 불소의 증가에 따라 일정한 비율로 탄소와 산소가 감소하였으며, 탄소의 감소가 산소보다 3배 크게 나타났다. 그리고 표면처리가 된 재료는 탄소와 산소가 조성 변화 추세선에서 떨어져 있었다. 실리콘이 증가하면 미세입자의 응집이, 불소의 양이 증가하면 깊은 홈이 나는 형태로 표면이 거칠어졌으며, 거칠기에 대한 영향은 실리콘이 더 컸다. 실리콘과 불소가 증가하면 습윤성이 감소했는데, 실리콘에 의한 영향이 2배 크게 나타났다. RGP 렌즈 재료는 표면이 거칠어지면 습윤성이 감소하는 소수성의 형태를 나타냈다. 결론: RGP 렌즈들의 성분과 표면을 동일한 방법으로 측정하고, 상호관계를 분석하였다. 따라서 이 연구는 RGP 렌즈 재료의 성분 설계에 대한 기초 자료로 활용할 수 있을 것으로 사료된다.

• 한국세라믹학회지
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• 제29권4호
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• 한국환경과학회지
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• 제22권4호
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• pp.407-413
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• 2013

The flow of sewage has been studied for hundreds of years. Reducing drag in pipes can allow sewer to be removed easily and quickly. Drag reduction is not only a macroscale issue. Physical and chemical properties of the nano-scale can affect flow at the macroscopic scale. In this paper the predictability of hydrophobicity at the nano-scale is studied. Molecular dynamics simulations were used to calculate the range of contact angles of water droplets in equilibrium on a pillared graphite surface. It was found that at a pillar height of two graphite layers there was the largest range of contact angles. It is observed that at this height the droplet begins to transition from the Wenzel state to the Cassie-Baxter state. Surfaces with larger pillar heights have much larger contact angles corresponding to a more hydrophobic surface. Silicon dioxide was also simulated in the water droplet. The contaminant slight decreased the contact angle of the water droplet.

• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• 대한기계학회논문집B
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• 제23권2호
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• pp.185-197
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• 1999

Heat transfer and solidification of liquid silicon in von-$K{\acute{a}}rm{\acute{a}}n$ swirling flow is investigated. The moving boundary is fixed for all times by a coordinate transformation, and finite difference method Is used to obtain the instantaneous location of the solid-liquid Interface and the heat transfer from the surfaces of solid and liquid. For small Stefan number or low wall temperature, the transient heat transfer from the surface of solid(QS(t)) is much larger than that from the liquid side of solid-liquid interface(QL(t)) and QL(t) reaches its quasi-steady-state value much faster than QS(t).

• 한국진공학회지
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• 제1권1호
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.