• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.33-40
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• 1992

Several etching phenomena were observed and analyzed in diaphragm process performed on 4-inch (100) Si wafers for sensor application. In case of deep etching to above 300$\mu$m depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. It was known that the hillock had a pyramidal shape or trapizoidal hexahedron structure depending on the density and size of the reaction products. The IR spectra showed that the white residue, which was due to the local over-saturation of Si dissolved in solution, was mostly Si-N-O compounds mixed with a small amount of H and C etc. Also, the difference in both the existence of etch-defects and etch rate distribution over a whole wafer was investigated when the etched surfaces were downward, upward horizontally and erective in etching solutions. The obtained data were analyzed through flow pattern in the etching bath. As the results, the downward and erective postures were favorable in the etch rate uniformity and the etch-defect removal, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.200-205
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• 1998

The nature, degree, and evolution of contact damage from Hertzian contacts in silicon nitride-boron nitride composites($Si_3N_4-BN$) are investigated as a function of boron nitride content. The strong deviations of indentation stress-strain from elastic response indicate exceptional plasticity in $Si_3N_4-BN$. The absence of ring cracks or cone cracks on the surfaces is observed, indicating a high damage tolerance. Subsurface quasi- plastic deformation by shear stress is considerable and microdamage is widely distributed within the region below the contact. Shear faults associated with local microfailures play a precursor role in plasticity of this material. When boron nitride content increases, $Si_3N_4-BN$ becomes softer and more quasi-plastic.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• The Journal of Advanced Prosthodontics
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• v.8 no.4
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• pp.275-284
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• 2016

PURPOSE. The aim of this study was to evaluate the influence of different surface treatment methods on the microtensile bond strength of resin cement to resin nanoceramic (RNC). MATERIALS AND METHODS. RNC onlays (Lava Ultimate) (n=30) were treated using air abrasion with and without a universal adhesive, or HF etching followed by a universal adhesive with and without a silane coupling agent, or tribological silica coating with and without a universal adhesive, and divided into 6 groups. Onlays were luted with resin cement to dentin surfaces. A microtensile bond strength test was performed and evaluated by one-way ANOVA and Tukey HSD test (${\alpha}$=.05). A nanoscratch test, field emission scanning electron microscopy, and energy dispersive X-ray spectroscopy were used for micromorphologic analysis (${\alpha}$=.05). The roughness and elemental proportion were evaluated by Kruskal-Wallis test and Mann-Whitney U test. RESULTS. Tribological silica coating showed the highest roughness, followed by air abrasion and HF etching. After HF etching, the RNC surface presented a decrease in oxygen, silicon, and zirconium ratio with increasing carbon ratio. Air abrasion with universal adhesive showed the highest bond strength followed by tribological silica coating with universal adhesive. HF etching with universal adhesive showed the lowest bond strength. CONCLUSION. An improved understanding of the effect of surface treatment of RNC could enhance the durability of resin bonding when used for indirect restorations. When using RNC for restoration, effective and systemic surface roughening methods and an appropriate adhesive are required.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.315-318
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• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.149-154
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• 2007

Bragg reflecting waveguide devices have been fabricated on a flexible polymer substrate utilizing a post lift-off process which could Provide excellent uniformity of grating Patterns on Plastic film. The 510 m Period Bragg grating pattern is made by two methods. In the first sample the grating is fabricated by exposing the laser interference pattern on a photoresist, and then it is inscribed by $O_2$ plasma etching. The grating pattern of the second sample is formed by a PDMS soft mold imprinting process. The selective adhesion property of SU-8 material for Au and Si surfaces is utilized to prepare a 100-mm thick plastic substrate. Single mode waveguide is fabricated on the plastic substrate using polymer materials with refractive indices of 1.540 and 1.430 for the core and the cladding layers, respectively. The Bragg grating on Plastic substrate does not show any degradation in its spectral response compared to the reference sample made on a silicon wafer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.9-14
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• 2004

In this study, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ ammonium persulfate(AP)/isopropyl alcohol(IPA) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-unifonnity exists on the etched surface because of formation of hillocks on the (100) surface. The addition of IPA to TMAH solution leads to smoother etched surfaces but, makes the Si etch rate lower. However, with the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square membranes of 20${\mu}{\textrm}{m}$ thickness and l00-400${\mu}{\textrm}{m}$ one-side length were fabricated successfully by applying optimum Si etching conditions of TMAH/AP solutions.

• Restorative Dentistry and Endodontics
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• v.17 no.1
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• pp.95-103
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• 1992

The purpose of this study was to evaluate the effect of the dentin pretreatment on the marginal leakage of a glassionomer cement. 1n this study, 60 molars with sound and healthy crown portion were used. The dentin surface of these teeth were exposed and polished with 600 grit silicon carbide paper. Square - shaped cavities were prepared on the flattened dentin surfaces and these were divided into 4 groups according to the dentin pretreatment procedures. Group I : Dentin pretreatment with distilled water as a control group. Group II : Dentin pretreatment with 5% sodium hypochlorite solution. Group III : Dentin pretreatment with Ketac conditioner. Group IV : Dentin pretreatment with 40% polyacrylic acid. The degrees of dye penetration in the cavity walls were assessed using a stereoscope at ${\times}40$ magnification according to the maximum dye penetration. The results were analyzed by using Mann - Whitney U test. The results were as follows : 1. All groups showed varying depth of dye penetration. 2. Distilled water group showed the most severe marginal leakage when compared with the other groups(P<0.05). 3. 40% polyacrylic acid group showed the least amount of marginal leakage compared with the other groups (P<0.05). 4. There were significant differences between Goup I(distilled water) and Group IV (40% polyacrylic acid)(P<0.05), but there were no significant differences among Group I(distilled water), Group II(sodium hypochlorite), Group III(Ketac conditioner) (P>0.05).