• Title/Summary/Keyword: Silicon surfaces

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Nanotribological characteristics of plasma treated hydrophobic thin films on silicon surfaces using SPM (SPM을 이용한 Si 표면위에 플라즈마 처리된 소수성 박막의 나노 트라이볼로지적 특성 연구)

  • Yoon, Eui-Sung;Park, Ji-Hyun;Yang, Seung-Ho;Han, Hung-Gu;Kong, Ho-Sung;Koh, Seok-Keun
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2001.11a
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    • pp.35-42
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    • 2001
  • Nanotribological characteristics between a Si$_3$N$_4$ AFM tip and hydrophobic thin films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Plasma-modified thin polymeric films were deposited on Si-wafer (100). Results showed that wetting angle of plasma-modified thin polymeric film increased with the treating time, which resulted in the hydrophobic surface and the decrease of adhesion and friction. Nanotribological characteristics of these surfaces were compared with those of other hydrophobic surfaces, such as DLC, OTS and IBAD-Ag coated surfaces. Those of OTS coated surface was superior to those of others, though wetting angle of plasma-modified thin polymeric film is higher.

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Improvement on the Passivation Effect of PA-ALD Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지를 위한 PA-ALD Al2O3 막의 패시베이션 효과 향상 연구)

  • Song, Se Young;Kang, Min Gu;Song, Hee-Eun;Chang, Hyo Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.754-759
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    • 2013
  • Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

The Deposition and Characterization of 10 nm Thick Teflon-like Anti-stiction Films for the Hot Embossing (핫 엠보싱용 점착방지막으로 사용되는 10nm급 두께의 Teflon-like 박막의 형성 및 특성평가)

  • Cha Nam-Goo;Kim In-Kwon;Park Chang-Hwa;Lim Hyung-Woo;Park Jin-Goo
    • Korean Journal of Materials Research
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    • v.15 no.3
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    • pp.149-154
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    • 2005
  • Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

Micro-patterning of light guide panel in a LCD-BLU by using on silicon crystals (실리콘 결정면을 이용한 LCD-BLU용 도광판의 미세산란구조 형성)

  • lChoi Kau;Lee, Joon-Seob;Song, Seok-Ho;Oh Cha-Hwan;Kim, Pill-Soo
    • Korean Journal of Optics and Photonics
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    • v.16 no.2
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    • pp.113-120
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    • 2005
  • Luminous efficiency and uniformity in a LCD-BLU are mainly determined by fine scattering patterns formed on the light guide panel. We propose a novel fabrication method of 3-dimensional scattered patterns based on anisotropic etching of silicon wafers. Micro-pyramid patterns with 70.5 degree apex-angle and micro-prism patterns with 109.4 degree apex-angle can be self-constructed by the wet, anisotropic etching of (100) and (110) silicon wafers, respectively, and those patterns are easily duplicated by the PDMS replica process. Experimental results on spatial and angular distributions of irradiation from the light guide panel with the micro-pyramid patterns were very consistent with the calculation results. Surface roughness of the silicon-based micro-patterns is free from any artificial defects since the micro-patterns are inherently formed with silicon crystal surfaces. Therefore, we expect that the silicon based micro-patterning process makes it possible to fabricate perfect 3-dimensional micro-structures with crystal surface and apex angles, which may guarantee mass-reproduction of the light guide panels in LCD-BLU.

Composition and Surface Analyses of RGP Contact Lenses (RGP 콘택트렌즈의 성분과 표면 분석)

  • Jang, Jun-Kyu;Shin, Hyung-Sup
    • Journal of Korean Ophthalmic Optics Society
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    • v.15 no.4
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    • pp.329-337
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    • 2010
  • Purpose: The surfaces and compositions of rigid gas permeable (RGP) contact lenses were analyzed with the consistent methods, and the basic informations for the composition design of lens materials were suggested. Methods: The bulk structures were analyzed by using Fourier infrared spectroscopy (FTIR), the compositions of surface components were observed by using x-ray photoelectron spectroscopy (XPS), the surface morphology and roughness were observed using atomic force microscopy (AFM), and the wettabilities were estimated by the surface wetting angles. The relations and trends of those results were analyzed. Results: The high oxygen permeability RGP lenses showed the trend that the fluorine decreases and the silicon increases. As the silicon and fluorine contents increased, the carbon and oxygen contents of RGP lens materials decreased at a constant ratio. The decreasing ratio of the carbon contents was three times larger than the decreasing ratio of oxygen contents. The composition of the surface treated lens was far from these tendency line. When the silicon contents increased, the rough surface was formed with the cohered particles. When the fluorine contents increased, the rough surface was formed with the deep flaws. The surface roughness increased and then wettabilities decreased as the silicon and fluorine contents increased. For the surface roughness changes, the increasing ratio of the silicon contents was two times larger than the increasing ratio of fluorine contents. The surface of RGP lens materials appeared the hydrophobic character of which the wettabilities decreased when the roughnesses increased. Conclusions: The surfaces and compositions of RGP contact lenses were measured by the same methods. Those results and relationships were compared and analysed. It is considered that these research results will be applied with the basic data for the composition design of lens materials.

A Study on the Gettering in Czochralski-grown Single Crystal Silicon Wafer (Czochralski 법으로 성장시킨 실리콘 단결정 Wafer에서의 Gettering에 관한 연구)

  • 양두영;김창은;한수갑;이희국
    • Journal of the Korean Ceramic Society
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    • v.29 no.4
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    • pp.273-282
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    • 1992
  • The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

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A Study of a Hydrophobic Surface: Comparing Pure Water and Contaminated Water

  • Ambrosia, Matthew Stanley;Lee, Chang-Han
    • Journal of Environmental Science International
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    • v.22 no.4
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    • pp.407-413
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    • 2013
  • The flow of sewage has been studied for hundreds of years. Reducing drag in pipes can allow sewer to be removed easily and quickly. Drag reduction is not only a macroscale issue. Physical and chemical properties of the nano-scale can affect flow at the macroscopic scale. In this paper the predictability of hydrophobicity at the nano-scale is studied. Molecular dynamics simulations were used to calculate the range of contact angles of water droplets in equilibrium on a pillared graphite surface. It was found that at a pillar height of two graphite layers there was the largest range of contact angles. It is observed that at this height the droplet begins to transition from the Wenzel state to the Cassie-Baxter state. Surfaces with larger pillar heights have much larger contact angles corresponding to a more hydrophobic surface. Silicon dioxide was also simulated in the water droplet. The contaminant slight decreased the contact angle of the water droplet.

Double Texturing of Glass Substrate and ZnO : Al Transparent Electrode Surfaces for High Performance Thin Film Solar Cells (고성능 박막태양전지를 위한 유리 기판 및 산화 아연 투명 전극의 2중 구조 표면 조직화 공정 연구)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.8
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    • pp.1230-1235
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    • 2017
  • We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

Heat Transfer and Solidification of Liquid Silicon in von-Kármán Swirling Flow (Von-Kármán 회전 유동 하에서의 액체 실리콘의 응고와 열전달)

  • Yoo, Joo-Sik
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.23 no.2
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    • pp.185-197
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    • 1999
  • Heat transfer and solidification of liquid silicon in von-$K{\acute{a}}rm{\acute{a}}n$ swirling flow is investigated. The moving boundary is fixed for all times by a coordinate transformation, and finite difference method Is used to obtain the instantaneous location of the solid-liquid Interface and the heat transfer from the surfaces of solid and liquid. For small Stefan number or low wall temperature, the transient heat transfer from the surface of solid(QS(t)) is much larger than that from the liquid side of solid-liquid interface(QL(t)) and QL(t) reaches its quasi-steady-state value much faster than QS(t).

The Characteristics of Residual Films on Silicon Surface $CHF_3/C_2F_6$ Reactive Ion Etching ($CHF_3/C_2F_6$ 플라즈마에 의한 실리콘 표면 잔류막의 특성)

  • 권광호;박형호;이수민;강성준;권오준;김보우;성영권
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.145-152
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    • 1992
  • Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

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