• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of the Korean Applied Science and Technology
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• v.16 no.1
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• pp.33-40
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• 1999

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.155-159
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• 2003

We report on the annealing effect and ferromagnetic characteristics of Zn$_{0.7}$Mn$_{0.3}$O film prepared by sol-gel method on the silicon (100) substrate using field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry. Magnetic measurements show thatZn$_{0.7}$Mn$_{0.3}$O films exhibit ferromagnetism at 5 K revealing the coercive field of ∼110 Oe for as grown sample and 360, 1035 Oe for samples annealed at 700, 800 $^{\circ}C$, respectively. Our experimental evidence suggests that ferromagnetic precipitates of a manganese oxide may be responsible for the observed ferromagnetic behaviors of the film.he film.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.604-609
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• 2019

In this study, we fabricated a capacitive humidity sensor with interdigitated (IDT) electrodes using a thermosetting polyimide as a humidifying material. First, the number of electrodes, thickness, and spacing of the polyimide film were optimized, and a mask was designed and fabricated. The sensor was fabricated on a silicon substrate using semiconductor processing equipment. The area of the sensor was $1.56{\times}1.66mm^2$, and the width of the electrode and the gap between the electrodes were each $3{\mu}m$. The number of electrodes was 166, and the length of an electrode was 1.294 mm for the sensitivity of the sensor. The sensor was then packaged on a PCB for measurement. The sensor was inserted into a chamber environment with a temperature of $25^{\circ}C$ and connected to an LCR meter to measure the change in capacitance at relative humidity (RH) of 20% to 90%, 1 V, and 20 kHz. The results showed a sensitivity of 26fF/%RH, linearity of < ${\pm}2%RH$, and hysteresis of < ${\pm}2.5%RH$.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.32 no.2
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• pp.103-108
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• 2019

Non-equilibrium molecular dynamics simulation on the thermal boundary resistance(TBR) of an aluminum(Al)/silicon(Si) interface was performed in the present study. The constant heat flux across the Si/Al interface was simulated by adding the kinetic energy in hot Si region and removing the same amount of the energy from the cold Al region. The TBR estimated from the sharp temperature drop at the interface was independent of heat flux and equal to $5.13{\pm}0.17K{\cdot}m^2/GW$ at 300K. The simulation result was experimentally confirmed by the time-domain thermoreflectance technique. A 90nm thick Al film was deposited on a Si(100) wafer using an e-beam evaporator and the TBR on the film/substrate interface was measured using the time-domain thermoreflectance technique based on a femtosecond laser system. A numerical solution of the transient heat conduction equation was obtained using the finite difference method to estimate the TBR value. Experimental results were compared to the prediction and discussions on the nanoscale thermal transport phenomena were made.

• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.522-528
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• 2023

In this work, adhesive tapes were prepared for the dicing process in semiconductor manufacturing. Compounds with different numbers of photoreactive groups (f = 1 to 3) were synthesized and incorporated into acrylic copolymers to formulate UV-curable acrylic adhesives. Structural confirmation of the synthesized photoreactive compounds (f = 2 or 3) was performed using nuclear magnetic resonance (NMR) spectroscopy. The introduction of the photoreactive compounds into the acrylic adhesive was accomplished by urethane reactions, and the successful synthesis of the UV-curable acrylic adhesive was verified by Fourier transform infrared (FT-IR) measurements. To evaluate the performance of the adhesive, the peel strength was evaluated before and after UV irradiation using a silicon wafer as a substrate. The adhesive exhibited high peel strength (~2000 gf/25 mm) before UV exposure, which was significantly reduced (~5 gf/25 mm) after UV exposure. Interestingly, the adhesive containing multifunctional photoreactive compounds showed the most significant reduction in peel strength. In addition, surface residue measurements by field emission scanning electron microscopy (FE-SEM) showed minimal surface residue (~0.2%) after UV exposure. Overall, these results contribute to the understanding of the behavior of UV-curable acrylic adhesives and pave the way for potential applications in semiconductor manufacturing processes.