• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Current Research on Agriculture and Life Sciences
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• v.31 no.3
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• pp.193-199
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• 2013

This study dyed rayon fabric using loess as a natural colorant. To obtain the optimal dyeing conditions, various dyeing conditions were examined (temperature, pH, time, and concentration). The color fastness was evaluated using standard washing and rubbing fastness tests. The results were as follows: The loess powder particle size ranged from 0.4 to $1.7{\mu}m$ with a distribution range of 1.1 to $1.4{\mu}m$, representing a fine and uniform manufactured loess powder. The loess component analysis showed a large amount of silicon dioxide and aluminum oxide. TheFT-IR spectra showed that the ammonium group in the rayon fabric produced N-H banding at $1,540cm^{-1}$. The highest K/S value for the rayon fabric was obtained when the pH was 8.0, and this value increased rapidly with a longer dyeing time and when increasing the loess concentration to 30% (w/v). Pre-treatment with a soybean solution produced the highest K/S value for the rayon fabric with a loess concentration of 30% (w/v). The SEM analysis showed a higher amount of loess adhered to the rayon fabric surface when increasing the loess concentration. However, pre-treatment with a cationic agent and soybean solution resulted in a much higher attachment of loess to the fabric surface. Thus, the experimental results showed that using a cationized fabric and pre-treatment with a soybean solution are more effective when dyeing rayon fabric with loess than when using only loess.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.111-117
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• 2017

This study examined the material properties of Korean rice husk ash (RHA) according to the manufacturing process, and evaluated the feasibility of its use as a new admixture for high strength concrete. For this purpose, its particle size distribution, chemical composition, and microstructure were analyzed under various parameters, such as calcination temperature ($400^{\circ}C$, $650^{\circ}C$, and $900^{\circ}C$) and the inclusion of a milling process. X-ray fluorescence analysis confirmed that the silicon oxide ($SiO_2$) content of RHA was improved to more than 92% with a calcination process at $650^{\circ}C$ or higher. In addition, microstructural analysis showed that the RHA calcined at $650^{\circ}C$ has a porous structure. Because of this, the absorption capacity of the RHA was improved. On the other hand, when the milling process was applied, the porous structure was destroyed; thus, the absorption capacity tended to decrease further. Based on the analysis results, it was concluded that RHA calcined at $650^{\circ}C$ can be used as an admixture for high strength concrete, which possesses functions of both a shrinkage reducing agent and a pozzolanic activator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• Economic and Environmental Geology
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• v.56 no.6
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• pp.745-764
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• 2023

In the Republic of Congo, Banded iron formations (BIFs) occur in two areas: the Chaillu Massif and the Ivindo Basement Complex, which are segments of the Archean Congo craton outcropping in the northwestern and southwestern parts of the country. They show interesting potential with significant mineral resources reaching 2 Bt and grades up to 60% Fe. BIFs consist mostly of oxide-rich facies (hematite/magnetite), but carbonate-rich facies are also highlighted. They are found across the country within the similar geological sequences composed of amphibolites, gneisses and greenschists. The Post-Archean Australian Shale (PAAS)-normalized patterns of BIFs show enrichment in elements such as SiO₂, Fe₂O₃, CaO, P₂O₅, Cr, Cu, Zn, Nb, Hf, U and depletion in TiO₂, Al₂O₃, MgO, Na₂O, K₂O, Sc, Th, Ba, Zr, Rb, Ni, V. REE diagrams show slight light REEs (rare earth elements; LREEs) compared to heavy REEs (HREEs), and positive La and Eu anomalies. The lithological associations, as well as the very high (Eu/Eu^*)_SN ratios> 1.8 shown by the BIFs, suggest that they are related to Algoma-type BIFs. The positive correlations between Zr and TiO₂, Al₂O₃, Hf suggest that the contamination comes mainly from felsic rocks, while the absence of correlations between MgO and Cr, Ni argues for negligeable contributions from mafic sources. Pr/Pr^* vs. Ce/Ce^* diagram indicates that the Congolese BIFs were formed in basins with redox heterogeneity, which varies from suboxic to anoxic and from oxic to anoxic conditions. They were formed through hydrothermal vents in the seawater, with relatively low proportions of detrital inputs derived from igneous sources through continental weathering. Some Congolese BIFs show high contents in Cr, Ni and Cu, which suggest that iron (Fe) and silicon (Si) have been leached through hydrothermal processes associated with submarine volcanism. We discussed their tectonic setting and depositional environment and proposed that they were deposited in extensional back-arc basins, which also recorded hydrothermal vent fluids.

• Computers and Concrete
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• v.34 no.4
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• pp.489-501
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• 2024

Geopolymers are part of a class of materials characterized by properties combining polymers, ceramics, and cement. These include exceptionally high thermal and chemical stability, excellent mechanical strength and durability in aggressive environments. This work deals with the synthesis, characterization, and sustainability evaluation of GP_GBFS-MK geopolymers by alkaline activation of a granulated blast furnace slag-metakaolin mixture. In the first step, elemental and oxide analyses by XRF and EDS showed that the main constituents of GP_GBFS-MK geopolymers are silicon, sodium, and aluminium oxides. The structural analyses by XRD and FTIR confirmed that the geopolymerization for GP_GBFS-MK geopolymers did occur, accompanied by the formation of disordered networks from the blends and a modification to the microstructure by the geopolymerization process. Similarly, the microstructural study made by SEM showed that the GP_GBFS-MK geopolymers are constituted by aluminosilicates in the form of dense clusters on which are adsorbed particles of unreacted GBFS in the form of spheroids and white residues of the alkaline activating solution. In addition, the study of the sustainability evaluation of GP_GBFS-MK geopolymers showed that the water absorption of geopolymeric materials is lower than that of OPC cement. As for the elevated temperature resistance, the analyses indicated an excellent elevated temperature resistance of GP_GBFS-MK. In the same way, the study of the resistance to chemical aggressions showed that the GP_GBFS-MK geopolymeric materials are unattackable, contrary to the OPC cement-based materials which are strongly altered.

• Restorative Dentistry and Endodontics
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• v.32 no.4
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• pp.343-355
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• 2007

The objectives of this study was to evaluate the durability of 4 resin cements by means of microtensile bond strength test combined with thermocycling method and fractographic FE-SEM analysis. Experimental groups were prepared according to thermocycling (0, 1,000, 5,000) and the kind of resin cements, those were Variolink II, Multilink, Panavia F 2.0, Rely X Unicem. Flat dentin surfaces were created on mid-coronal dentin of extracted third molars. Then fresh dentin surface was grounded with 320-grit silicon carbide abrasive papers to create uniform smear layers. Indirect composite block (Tescera, Bisco Inc., Schaumburg, IL, USA) was fabricated ($12\;{\times}\;12\;{\times}\;6\;mm^3$). It's surface for bonding to tooth was grounded with silicon carbide abrasive papers from 180- to 600-grit serially, then sandblasted witk $20\;-\;50\;{\mu}m$ alumina oxide. According to each manufacturer's instruction, dentin surface was treated and indirect composite block was luted on it using each resin cement. For Rely X Unicem, dentin surface was not treated. The bonded tooth-resin block were stored in distilled water at $37^{\circ}C$ for 24 hours. After thermocycling, the bonded tooth-resin block was sectioned occluso-gingivally to 1.0 mm thick serial slabs using all Isomet slow-speed saw (Isomet, Buehler Ltd, Lake Bluff, IL, USA). These sectioned slabs were further sectioned to $1.0\;{\times}\;1.0\;mm^2$ composite-dentin beams. The specimens were tested with universal testing machine (EZ-Test, Shimadzu, Japan) at a crosshead speed of 1.0 mm/min with maximum load of 500 N. The data was analyzed using one-way ANOVA and Duncan's multiple comparison test at $p\;{\leq}\;0.05$ level. Within the limited results, we conclude as follows; 1. The bond strength of Variolink II was evaluated the highest among experimental groups and was significantly decreased after 1,000 thermocycling (p < 0.05). 2. The bond strength of Multilink was more affected by thermocycling than the other experimental groups and significantly decreased after 1,000 thermocycling (p < 0.05). 3. Panavia F 2.0 and Rely X Unicem showed the gradually decreased tendency of microtensile bond strength according to thermocycling but there was no significant difference (p > 0.05). 4. Adhesive based-resin cements showed lower bond strength with or without thermocycling than composite based-resin cements. 5. Variolink II & Multilink showed high bond strength and mixed failure, which was occurred with a thin layer of luting resin cement before thermocycling and gradually increased adhesive failure along the dentin surface after thermocycling. The bonding performance of resin cement can be affected by application procedure and chemical composition. Composite based-resin cement showed higher bond strength and durability than adhesive based-resin cement.

• Journal of Dental Rehabilitation and Applied Science
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• v.23 no.3
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• pp.249-257
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• 2007

State of problem : The use of zirconium oxide all-ceramic material provides several advantages, including a high flexural strength(>1000MPa) and desirable optical properties, such as shading adaptation to the basic shades and a reduction in the layer thickness. Along with the strength of the materials, the cementation technique is also important to the clinical success of a restoration. Nevertheless, little information is available on the effect of different surface treatments on the bonding of zirconium high-crystalline ceramics and resin luting agents. Purpose : The aim of this study was to test the effects of surface treatments of zirconium on shear bond strengths between bovine teeth and a zirconia ceramic and evaluate differences among cements Material and methods : 54 sound bovine teeth extracted within a 1 months, were used. They were frozen in distilled water. These were rinsed by tap water to confirm that no granulation tissues have left. These were kept refrigerated at $4^{\circ}C$ until tested. Each tooth was placed horizontally at a plastic cylinder (diameter 20mm), and embedded in epoxy resin. Teeth were sectioned with diamond burs to expose dentin and grinded with #600 silicon carbide paper. To make sure there was no enamel left, each was observed under an optical microscope. 54 prefabricated zirconium oxide ceramic copings(Lava, 3M ESPE, USA) were assigned into 3 groups ; control, airborne-abraded with $110{\mu}m$ $Al_2O_3$ and scratched with diamond burs at 4 directions. They were cemented with a seating force of 10 ㎏ per tooth, using resin luting cement(Panavia $F^{(R)}$), resin cement(Superbond $C&B^{(R)}$), and resin modified GI cement(Rely X $Luting^{(R)}$). Those were thermocycled at $5^{\circ}C$ and $55^{\circ}C$ for 5000 cycles with a 30 second dwell time, and then shear bond strength was determined in a universal test machine(Model 4200, Instron Co., Canton, USA). The crosshead speed was 1 mm/min. The result was analyzed with one-way analysis of variance(ANOVA) and the Tukey test at a significance level of P<0.05. Results : Superbond $C&B^{(R)}$ at scratching with diamond burs showed the highest shear bond strength than others (p<.05). For Panavia $F^{(R)}$, groups of scratching and sandblasting showed significantly higher shear bond strength than control group(p<.05). For Rely X $Luting^{(R)}$, only between scratching & control group, significantly different shear bond strength was observed(p<.05). Conclusion : Within the limitation of this study, Superbond $C&B^{(R)}$ showed clinically acceptable shear bond between bovine teeth & zirconia ceramics regardless of surface treatments. For the surface treatment, scratching increased shear bond strength. Increase of shear bond strength by sandblasting with $110{\mu}m$ $Al_2O_3$ was not statistically different.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.273-278
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• 2012

Over the last decade, the hafnium-based gate dielectric materials have been studied for many application fields. Because these materials had excellent behaviors for suppressing the quantum-mechanical tunneling through the thinner dielectric layer with higher dielectric constant (high-K) than $SiO_2$ gate oxides. Although high-K materials compensated the deterioration of electrical properties for decreasing the thickness of dielectric layer in MOSFET structure, their nano-mechanical properties of $HfO_2$ thin film features were hardly known. Thus, we examined nano-mechanical properties of the Hafnium oxide ($HfO_2$) thin film in order to optimize the gate dielectric layer. The $HfO_2$ thin films were deposited by rf magnetron sputter using hafnium (99.99%) target according to various oxygen gas flows. After deposition, the $HfO_2$ thin films were annealed after annealing at $400^{\circ}C$, $600^{\circ}C$ and $800^{\circ}C$ for 20 min in nitrogen ambient. From the results, the current density of $HfO_2$ thin film for 8 sccm oxygen gas flow became better performance with increasing annealing temperature. The nano-indenter and Weibull distribution were measured by a quantitative calculation of the thin film stress. The $HfO_2$ thin film after annealing at $400^{\circ}C$ had tensile stress. However, the $HfO_2$ thin film with increasing the annealing temperature up to $800^{\circ}C$ had changed compressive stress. This could be due to the nanocrystal of the $HfO_2$ thin film. In particular, the $HfO_2$ thin film after annealing at $400^{\circ}C$ had lower tensile stress, such as 5.35 GPa for the oxygen gas flow of 4 sccm and 5.54 GPa for the oxygen gas flow of 8 sccm. While the $HfO_2$ thin film after annealing at $800^{\circ}C$ had increased the stress value, such as 9.09 GPa for the oxygen gas flow of 4 sccm and 8.17 GPa for the oxygen gas flow of 8 sccm. From these results, the temperature dependence of stress state of $HfO_2$ thin films were understood.