• Tribology and Lubricants
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• v.16 no.4
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• pp.282-288
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• 2000

A sliding friction and wear test for silicon nitride (Si,N4) was conducted using a ball-on-disk specimen configuration. The material used in this study was HIPed silicon nitride. The tests were carried out from room temperature to 1000$^{\circ}C$ using self-mated silicon nitride couples in laboratory air. The worn surfaces were observed by SEM and the debris particles from the worn surfaces were analyzed for oxidation by XPS. The normal load was found to have a more significant influence on the friction coefficient of the silicon nitride than an elevated temperature. The specific wear rate was found to decrease along with the sliding distance. The specific wear rate at 29.4 N and 1000$^{\circ}C$ was 292 times larger than that at room temperature. The main wear mechanism from room temperature to 750$^{\circ}C$ was caused by brittle fracture whereas from 750$^{\circ}C$ to 1000$^{\circ}C$ the wear mechanism was mainly influenced by the oxidation of silicon nitride due to the increased temperature. The oxidation of silicon nitride at a high temperature was a significant factor in the wear increase.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.84-93
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• 1999

Sliding friction and wear tests for silicon nitride(Si$_3$N$_4$) was carried out with a ball-on-disk specimen configuration. The material used in this study was HIPed silicon nitride. The tests was carried out from room temperature to 1000"I with self mated couples of slicon nitride in laboratory air. Worn surfaces were observed by SEM and debris particles from worn surfaces were analyzed degree of oxidation by XPS. XPS.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• 연구논문집
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• s.34
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• pp.131-138
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• 2004

Porous silicon nitride ceramics were prepared by Self-propagating High Temperature Synthesis from silicon powder, silicon nitride powder and the pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/$Si_3N_4$ ratio, size and amount of the pore-forming precursors. Some samples exhibited as high flexural strength as $162\pm24$ MPa. The high strength is considered to result from the fine pore size and the strong bonding among the silicon nitrid particles.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.622-627
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• 2002

Multi-layer composites consisting of silicon nitride, silicon nitride-silicon carbide and boron nitride-alumina layers were prepared fly stacking the corresponding ceramic tapes. The composites demonstrated self-diagnostic capability and non-catastrophic failure behavior. The composites consisting of many thin layers exhibited high strength and stepwise increase of the electrical resistance during the flexure test. The strength of the composite with too thick silicon nitride layers was low and the electrical resistance was abruptly increased to the detection limit of the digital multi-meter during the test. An extensive crack branching was observed in the weak (BN + Al$_2$O$_3$)layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.199-199
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• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.59-63
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• 2015

This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap density can be calculated based on the program characteristics of the nitride thickness variations. By applying this method, silicon rich nitride device found to have a larger trap density than stoichiometric nitride device. This result is consistent with previous studies. If this comparison analysis can be expected to result in improved reliability of the SONOS flash memory.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.269-276
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• 1996

The effect of sintering aids on the sinterability for silcion nitride has been studied by hundreds workers. However the effect of sintering aids on the machinability as the own trobles which is the major barrier for the field applications of the ceramic components has not been fully studied. in this study the contents of Al2O3 and Y2O3 in silicon nitride were varied from 0 to 8 wt% respectively. The physical and mechanical properties of the silcion nitride were measured. The optimal microstructure of silicon nitride balls with the excellent machinability by adding with various contents of sintering aids was studied by MGF(magnetic-fluid grinding)technique. An attempt to figure out how the mechanical properties influence the machinability of silicon-nitride ball was made.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.223-226
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• 1987

Among many densification routes for silicon nitride, HIP(hot isostatic pressing) is becomming more popular these days, mainly due to the fact that it can produce highly reliable products with superior mechanical properties. This study involves in sintering of silicon nitride followed by HIP which requires no canning. Various property changes curing sintering and HIP are observed and analyzed in terms of microstructural changes. Porosity decrease and enhanced interlocking of grains by HIP are considered to be the major causes for improved mechanical properties of silicon nitride.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.6
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• pp.783-789
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• 2003

An experimental method to investigate the fracture strength and fracture toughness for the silicon nitrides sintered at various sintering temperature is established. The erosion rate for these materials in the various concentration of NaOH solution is also investigated. In result, the fracture strength of Si3N4 is decreased with the increase of sintering temperature. On the other hand, the fracture toughness KIC is increased with the increase of sintering temperature. The erosion rate of silicon nitride in the NaOH solution depend largely on the grain size and the concentration of NaOH solution. The erosion rate of silicon nitride sintered at $1800^{\circ}C$ was much higher than that at $1950^{\circ}C$. These results are due to the unique columnar structure of silicon nitride.