• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.12
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• pp.230-236
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• 2019

Recently, issues related to the quality of concrete have continuously resulted in surface quality problems, such as the exfoliation of concrete surfaces due to the cost reduction of cement and poor quality fine aggregate, scaling of surfaces caused by laitance, and plastic shrinkage cracks. Prompted by social issues, the application of a photo catalyst to road structures is being attempted to solve the environmental problems caused by fine dust and automobile exhaust. In this study, chemical admixtures were developed to improve the surface quality of concrete and to apply and distribute titanium dioxide in nanoscale sizes to provide basic data for the development of a photocatalyst-curing agent. As a result of the experiment, silicon and silane were reviewed as a raw material as a curing agent to develop a high performance curing agent with better film performance than conventional curing agents because they could form a film quickly on a fresh concrete surface. The distributed stability of the ultrasonic disperser showed the best performance through an outdoor test for four weeks to review the dispersion measures for the application of nanomaterials.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.843-847
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• 1999

In this research, C/SiC composites, i.e. activated carbon coated with SiC obtained from dichlorodimethylsilane(DDS) and hydrogen, have been made by chemical vapor infiltration(CVI) in a fluidized bed reactor. Activated carbons of sizes of 4~12, 12~20, and 20~40 mesh were used. After deposition the surface area, the amount and the shape of deposit of each sample were observed at different concentrations of reactant DDS, sizes of activated carbon, reaction pressures and reaction times. The experimental results showed that uniform deposition in the pores of sample was obtained at a lower concentration of DDS and a lower pressure. Additionally, from the observation that the pore diameter and the surface area have minimum values at a certain time of deposition, it was known that deposition occurred inside of the pore at first and then on the outside of particle. Small particles of SiC were deposited uniformly on the surface of activated carbon at lower DDS concentrations and lower reaction pressures. The results were confirmed by SEM, TGA, the pore size distribution analyzer and BET.

• The Journal of Advanced Prosthodontics
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• v.8 no.1
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• pp.1-8
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• 2016

PURPOSE. The purpose of this study was to evaluate the efficacy of two different metal conditioners for non-precious metal alloys for the bonding of porcelain to a cobalt-chromium (Co-Cr) alloy. MATERIALS AND METHODS. Disk-shaped specimens ($2.5{\times}10.0mm$) were cast with Co-Cr alloy and used as adherend materials. The bonding surfaces were polished with a 600-grid silicon carbide paper and airborne-particle abraded using $110{\mu}m$ alumina particles. Bonding specimens were fabricated by applying and firing either of the metal conditioners on the airborne-particle abraded surface, followed by firing porcelain into 5 mm in diameter and 3 mm in height. Specimens without metal conditioner were also fabricated. Shear bond strength for each group (n=8) were measured and compared (${\alpha}=.05$). Sectional view of bonding interface was observed by SEM. EDS analysis was performed to determine the chemical elements of metal conditioners and to determine the failure modes after shear test. RESULTS. There were significant differences among three groups, and two metal conditioner-applied groups showed significantly higher values compared to the non-metal conditioner group. The SEM observation of the sectional view at bonding interface revealed loose contact at porcelain-alloy surface for non-metal conditioner group, however, close contact at both alloy-metal conditioner and metal conditioner-porcelain interfaces for both metal conditioner-applied groups. All the specimens showed mixed failures. EDS analysis showed that one metal conditioner was Si-based material, and another was Ti-based material. Si-based metal conditioner showed higher bond strengths compared to the Ti-based metal conditioner, but exhibited more porous failure surface failure. CONCLUSION. Based on the results of this study, it can be stated that the application of metal conditioner is recommended for the bonding of porcelain to cobalt-chromium alloys.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.296-301
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• 2022

Due to the fact that zirconium based metal-organic frameworks (Zr-MOFs), such as UiO-66, have a large specific surface area and excellent selective adsorption capacity, Zr-MOFs are gaining attention as materials that can provide protection from the attack of chemical warfare agents in battleground. However, most of the metal-organic frameworks have an issue of selective adsorption capacity degraded by water molecules when exposed to the atmosphere, because of the weak metal-organic ligand bonds and the presence of voids. Therefore, polydimethylsiloxane (PDMS), a representative hydrophobic polymer material, was coated on the surface of UiO-66 to enhance the sustainability of the diisopropyl methylphosphonate (DIMP) sorption capacity in the battleground condition. Through the analysis of surface structure and organic functional group distribution of PDMS coated UiO-66, silicon was confirmed to be evenly coated. The contact angle increased by over 30° for the PDMS coated UiO-66, indicating that the hydrophobicity was improved. In addition, both the UiO-66 and PDMS coated UiO-66 were used as adsorbents for DIMP, a similar chemical warfare agent, to investigate the durability of adsorption capacity in a high humidity environment. The PDMS coated UiO-66 showed higher durability of adsorption capacity for 20 days than that of pristine UiO-66.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.128-135
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• 2022

The inside of a quartz glass crucible for semiconductor processing, called a transparent layer, is manufactured using synthetic silica powder. Bubbles existing in the transparent layer of the crucible cause a problem of reducing the quality of the crucible as well as the yield of the silicon ingot. Therefore, the main goal of the synthetic silica powder, which is the raw material of the transparent layer, is to minimize the bubble generation factor. For this purpose, in the case of synthetic silica powder, it is necessary to minimize silanol groups, carbon and pores. In this study, synthetic silica gel was prepared using the sol-gel method, and changes in carbon content and specific surface area were investigated according to calcination temperature and dwelled time in a two-stage calcination process. The first-stage calcination process was performed between 500℃ and 600℃ and the second-stage calcination process was performed between 1000℃ and 1100℃. The dwelled time was carried out from 10 minutes to a maximum of 12 hours. The carbon content of the powder calcined at 1000℃ for 1 hour was 0.0031 wt.%, and the specific surface area of the powder calcined at 1100℃ for 12 hours was 16.6 m²/g.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.556-561
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• 2001

We prepared a new a SOS(silicon-on-silicide) wafer pair which is consisted of Si(100)/1000$\AA$-NiSi Si (100) layers. SOS can be employed in MEMS(micro- electronic-mechanical system) application due to low resistance of the NiSi layer. A thermally evaporated $1000\AA$-thick Ni/Si wafer and a clean Si wafer were pre-mated in the class 100 clean room, then annealed at $300~900^{\circ}C$ for 15hrs to induce silicidation reaction. SOS wafer pairs were investigated by a IR camera to measure bonded area and probed by a SEM(scanning electron microscope) and TEM(transmission electron microscope) to observe cross-sectional view of Si/NiSi. IR camera observation showed that the annealed SOS wafer pairs have over 52% bonded area in all temperature region except silicidation phase transition temperature. By probing cross-sectional view with SEM of magnification of 30,000, we found that $1000\AA$-thick uniform NiSi layer was formed at the center area of bonded wafers without void defects. However we observed debonded area at the edge area of wafers. Through TEM observation, we found that $10-20\AA$ thick amourphous layer formed between Si surface and NiSix near the counter part of SOS. This layer may be an oxide layer and lead to degradation of bonding. At the edge area of wafers, that amorphous layer was formed even to thickness of $1500\AA$ during annealing. Therefore, to increase bonding area of Si NiSi ∥ Si wafer pairs, we may lessen the amorphous layers.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.4
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• pp.251-258
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• 2004

Soil testing for silicon (Si) in the upland soils has not been sufficiently investigated. The objective of this study was to identify a suitable Si extraction method for upland soils of oriental melon (Cucumis melo L.). Thirty-eight surface soil samples and matured leaf samples were collected from plastic film houses in Sungju, Gyeongbuk province. In the laboratory, six different methods were used for extracting Si from the soils. The methods included 0.5 N HCl extraction, 1 N sodium acetate buffer (PH 4.0) extraction, citric acid 1% extraction, water extraction, Tiis buffer pH 7.0 extraction, and extraction after incubation with water for 1 week. The concentration of dissolved Si in soil extracts from all methods was determined colorimetrically. With 1 N sodium acetate buffer extraction, as the available soil Si increased, the concentration ofSi in oriental melon leaf increased until around $14g\;SiO_2\;kg^{-1}$ was reached in the form of a saturation curve. Also, among the methods studied, extraction with 1 N sodium acetate buffer was the only method provided a significant linear correlation with oriental melon leaf Si content in the range of extractable soil Si lower than the level which inducing Si saturation in oriental melon leaf. These results indicate that 1 N sodium acetate buffer extraction procedure is the best soil Si test method for upland soils of oriental melon. This sodium acetate buffer extraction procedure is rapid and quite well acquainted with scientists and farmers, since the method has been used for routine paddy soil testing.