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http://dx.doi.org/10.6111/JKCGCT.2022.32.4.128

A study on the calcination process of synthetic silica powder for quartz glass crucibles  

Yang, Jae-Kyo (Advanced Materials and Processing Center, Institute for Advanced Engineering (IAE))
Jin, Yun-Ho (Advanced Materials and Processing Center, Institute for Advanced Engineering (IAE))
Abstract
The inside of a quartz glass crucible for semiconductor processing, called a transparent layer, is manufactured using synthetic silica powder. Bubbles existing in the transparent layer of the crucible cause a problem of reducing the quality of the crucible as well as the yield of the silicon ingot. Therefore, the main goal of the synthetic silica powder, which is the raw material of the transparent layer, is to minimize the bubble generation factor. For this purpose, in the case of synthetic silica powder, it is necessary to minimize silanol groups, carbon and pores. In this study, synthetic silica gel was prepared using the sol-gel method, and changes in carbon content and specific surface area were investigated according to calcination temperature and dwelled time in a two-stage calcination process. The first-stage calcination process was performed between 500℃ and 600℃ and the second-stage calcination process was performed between 1000℃ and 1100℃. The dwelled time was carried out from 10 minutes to a maximum of 12 hours. The carbon content of the powder calcined at 1000℃ for 1 hour was 0.0031 wt.%, and the specific surface area of the powder calcined at 1100℃ for 12 hours was 16.6 m2/g.
Keywords
Quartz glass crucible; Synthetic silica; Calcination; Semiconductor; Specific surface area;
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