• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2002

In this paper, a thermopile which is applied to wide uses of temperature measuring was fabricated and its characteristic was improved by appling SOI structure to the fabrication. We improved characteristic of the thermopile by using single crystal silicon strips that has high seebeck coefficient and dielectric isolating the silicon strips from substrate with silicon dioxide film which dramatically decrease thermal conductivity between hot and cold junction compared to a silicon strip which was fabricated by ion implantation. The thermopile consists of 17 p-type single crystal silicon strips and 17 n-types by serial connection. The result of electromotive force measuring showed very good characteristic as 130mV/K when temperature difference between the two ends of the thermopile occurs by applying light on the thermopile fabricated with silicon strips of $1600{\mu}m$ length, $40{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.99-105
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• 2018

In order to avoid un-uniform crystallization on the surface of a quartz glass crucible that is known to affect the production yield of the single crystal silicon, Ba (barium) was selected as a crystallization promotor and the inner surface of the crucible was coated using Ba (barium hydroxide octahydrate)-solution by the spray pyrolysis method. For un-coated crucible, it was found that the crystallization of its surface started at $1350^{\circ}C$, and at $1450^{\circ}C$ the surface was uniformly crystallized with ${\beta}$-cristobalite phase. It was found that the crucible coated with Ba began to be crystallized from $1000^{\circ}C$ and was uniformly crystallized on the crucible surface at $1300^{\circ}C$. In this case, ${\alpha}$-cristobalite and needle-shaped $BaSi_2O_5$ phase were created and disappeared as a crystal phase, and the ${\beta}$-cristobalite phase was eventually evenly distributed over the Ba-coated crucible surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.147-150
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• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.191-197
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• 1991

The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.53-62
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• 1992

In Zone Melting Recrystallization(ZMR) of SOl structure, thin silicon films have been recrystallized by artificial control of beam intensity profile which was obtained by tilting of upper elliptical reflector. Temperature profiles and gradients near solidification interface were calculated by numerical simulation for analysis of asymmetric line heating effect. The larger the tilting angle of the upper reflector, the larger the degree of supercooling at liquid and the interdefect spacing in thin silicon films. Major defects were continuous subgrainboundaries. Isolated threading dislocations were observed in the case of the film having low defect density. We have found that the thin silicon films were recrystallized into (100) textured single crystals by cross-sectional TEM and thin film X-ray diffraction analysis.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.181-184
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• 2004

Thin films of single phase, polycrystalline silicon germanium (Si$_{1-x}$ Ge$_{x}$) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After irradiation of the targets by a pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si$_{1-x}$ Ge$_{x}$, whose composition is close to those of the targets.rgets.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.