KIEE International Transactions on Electrophysics and Applications

The Korean Institute of Electrical Engineers (대한전기학회)
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Preparation of Crystalline $Si_{1-x}Ge_x$ Thin Films by Pulsed Ion-Beam Evaporation

  • Yang, Sung-Chae (Division of Electronics and Information, Chonbuk National University)
  • Published : 2004.08.01
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Abstract

Thin films of single phase, polycrystalline silicon germanium (Si$_{1-x}$ Ge$_{x}$) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After irradiation of the targets by a pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si$_{1-x}$ Ge$_{x}$, whose composition is close to those of the targets.rgets.

Keywords

References

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