• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.211-213
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• 1997

• 한국진공학회지
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• 제11권4호
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• pp.249-255
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• 2002

이방성 습식 식각기술을 이용하여 멤버레인을 제작하기 위하여 KOH 용액 및 KOH-IPA 혼합용액을 사용하여 단결정 실리콘 기판을 식각하였다. 단결정 실리콘의 식각속도는 식각 용액의 온도와 농도에 좌우되었으며, 식각 용액의 농도에 따라 식각 형태와 패턴 형성 방향이 달라짐도 관찰되었다. 식각을 위한 표면패턴은 실리콘웨이퍼의 primary flat에 $45^{\circ}$로 기울여 형성되었으며 KOH의 농도가 20 wt%로 유지되었을 때, 식각 용액의 온도 $80^{\circ}C$ 이상에서는 U-groove, $80^{\circ}C$ 이하의 온도에서는 V-groove 식각 형태가 형성되었다. 각 면에 대한 식각속도 차이에 의해서 생기는 hillock은 온도와 농도가 높아짐에 따라 현저하게 줄어들었다.

• 전자공학회논문지A
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• 제32A권8호
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• pp.94-106
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• 1995

A three-dimensional(3D) Monte Carlo simulator for boron ion implantation into <100>single-crystal silicon considering the mask structure has been developed to predict the mask-dependent impurity doping profiles of the implanted boron at low energies into the reduced area according to the trend of a reduction in the size of semiconductor devices. All relevant important parameters during ion implantation have been taken into account in this simulator. These are incident energy, tilt and rotation of wafer, orientation of silicon wafer, presence of native silicon dioxide layer, dose, wafer temperature, ion beam divergence, masking thickness, and size and structure of open window in the mask. The one-dimensional(1D) results obtained by using the 3D simulator have been compared with the SIMS experiments to demonstrate its capabilities and confirem its reliability, and we obtained relatively accurate 1D doping profiles. Through these 3D simulations considering the hole structure and its size, we found the mask effects during boron ion implantation process.

• 소성∙가공
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• 제13권3호
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국재료학회지
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• 제16권10호
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• pp.656-662
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• 2006

We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

• 한국결정성장학회지
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• 제32권5호
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• pp.212-217
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• 2022

고온의 탄화규소 단결정성장공정에서는 탄화규소-흑연간의 열팽창계수의 차이로 인한 열응력이 크게 발생할 수 있어 흑연부재로부터 탄화규소 종자정이 분리되어 성장 중에 종자정이 떨어지는 문제가 발생할 수 있다. 그러나 이러한 탄화규소 종자정 모듈의 접합특성에 대한 연구는 현재까지 거의 보고된 바가 없다. 본 연구에서는 탄화규소-흑연 간의 접합특성을 평가하기 위해 3점 굽힘시험법을 응용한 복합모드꺾임시험(Mixed-Mode Flexure Test)을 통해 탄화규소-흑연을 서로 다른 접합제를 적용하여 접합한 시편의 접합 특성을 확인하고, 흑연 접착제의 미세구조를 분석하기 위해 라만분광법(Raman spectroscopy), X선 광전자분광법(X-ray Photoelectron Spectroscopy) 및 X선 전산화 단층촬영법(X-ray Computed Tomography)을 활용하였다. 이러한 일련의 과정을 통하여 선별한 접착성이 우수한 접착제를 적용하여 직경 50 mm급의 탄화규소 종자결정모듈을 제작하고, 이를 적용하여 고온의 상부종자용액성장 공정을 이용하여 공정 중 종자정의 탈락없이 성공적으로 직경 50 mm급의 탄화규소 단결정을 성장시켰다.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 대한기계학회논문집
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• 제18권5호
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• pp.1096-1105
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• 1994

A hypereutectic Aluminum-Silicon Alloy is widely used in the parts of automobile because of high-resistance and good strength. In this study, the cutting of hypereutectic A1-Si alloy for economical production was investigated by simulation. Tool life and the extraction rate of Si particles is inversely proportional to the depth of cut. When decreasing the depth of cut, the reduction of single crystal diamond tool cost and tool change time is achieved.

• 한국세라믹학회지
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• 제29권4호
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• International Journal of Precision Engineering and Manufacturing
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• 제5권2호
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• pp.32-38
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• 2004

The electrorheological(ER) fluid has been used to the ultraprecision polishing of single crystal silicon as new polishing slurry whose properties such as yield stress and particle structure changed with the application of an electric field. In this work, it is aimed to find the effective parameters in the ER fluid on material removal in the polishing system whose structure is similar to that of the simple hydrodynamic bearing. The generated pressure in the gap between a moving wall and a workpiece, as well as the electric field-induced stress of the mixture of ER fluid-abrasives, is evaluated experimentally, and their influence on the polishing of single crystal silicon is analyzed. Moreover, the behavior of abrasive and ER particles is described.