• Journal of Integrative Natural Science
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• v.14 no.4
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• pp.147-154
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• 2021

A luminescent porous silicon sensor, whose surface was passivated with organic molecule via hydrosilylation under various conditions, has been researched to measure the photoluminescence (PL) stability of porous silicon (PSi). Photoluminescent PSi were synthesized by an electrochemical etching of n-type silicon wafer under the illumination with a 300 W tungsten filament bulb during the etching process. The PL of PSi displayed at 650 nm, which is due to the quantum confinement of silicon quantum dots in the PSi. To stabilized the photoluminescence of PSi, the hydrosilylation of PSi with silole molecule containg vinyl group was performed. Surface morphologies of fresh PSi and surface-modified PSi were obtained with a cold FE-SEM. Optical characterization of red photoluminescent silicon quantum dots was investigated by UV-vis and fluorescence spectrometer.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.21-24
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• 2002

A sensor array (35mm'! in diaphragm dimension) of 12 sensing elements with different operating temperatures was optimized with respect to thermal operation. This sensor array with single heater on a glass diaphragm over back-etched silicon bulk realizes a novel concept of a sensor array: an way of sensor elements operated at different temperatures can yield more information than single measurement. The proposed micro sensor array could provide well-integrated way structure because it has only single heater at the center of the diaphragm and used the various sensing properties of two kinds of metal oxide layers with various operating temperatures.

• Journal of Sensor Science and Technology
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• v.8 no.4
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• pp.308-313
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• 1999

This paper will present an anisotropic etching in TMAH technique used in the fabrication of three-dimensional magnetic field vector sensor based on angled Hall plate structure. This sensor design relies on simultaneously detecting all magnetic field vector components using Hall plates that are imbedded into the silicon [111] sloped-surface of bulk micromachined cavity by the anisotropic etching of [100] silicon. The fabricated Hall elements has relatively improved sensitivity compare to convensional Hall elements for three-dimensional magnetic field sensing. The product sensitivity of 547V/AT at the supply current of 1.0mA was achived. The corresponding limit in the detection of magnrtic field is 0.07G that calculated by measured power spectral density(PSD) in magnetic sensor output.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1549_1550
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• 2009

본 연구에서는 적외선 가스 센서용 IR source에 대한 연구를 진행하였다. MEMS 공정을 이용하여 poly-silicon을 IR source의 발열체로 사용하였다. Chip size는 $2{\times}2mm$ 이며 membrane의 면적은 $1{\times}1mm$로 설계, 제작 하였다. 제작된 IR source의 적외선 방출 특성을 적외선 카메라를 이용하여 관찰하였으며, 같은 온도에서의 thermal stress에 대한 관찰도 진행하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.102-102
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• 1999

Visible photoluminescence(PL) in si-implanted SiO2 films on crystaline silicon were observed. Thermal oxide films of 1 ${\mu}{\textrm}{m}$ thickness on P-type crystal silicon were made and si+ ions were implanted with 200keV acceleration voltage on ti. Argon laser (wavelength 488nm) and PM tube were used for PL measurements. As annealing time increased at low temperature, the visible PL intensity are increased and the peak positions are changed. On the other hand, with increasing annealing time at high temperature, the visible PL intensity are disappeared. From the PL peaks and intensity changes, XRD results, and TEM observations, we will discuss the origin of PL in Si+-implanted SiO2 films with oxygen righ defects and silicon rich defects.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.73-77
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• 2005

In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.301-306
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• 2014

A porous silicon microcavity (PSMC) sensor has been made for vapors of solvent solutions, and a method has been developed in order to obtain simultaneous determination of two volatile substances with different concentrations. In our work, the temperature of the solution and the velocity of the air stream flowing through the solution have been used to control the response of the sensor for ethanol and acetone solutions. We study the dependence of the cavity-resonant wavelength shift on solvent concentration, velocity of the airflow and solution temperature. The wavelength shift depends linearly on concentration and increases with solution temperature and velocity of the airflow. The dependence of the wavelength shift on the solution temperature in the measurement contains properties of the temperature dependence of the solvent vapor pressure, which characterizes each solvent. As a result, the dependence of the wavelength shift on the solution temperature discriminates between solutions of ethanol and acetone with different concentrations. This suggests a possibility for the simultaneous determination of the volatile substances and their concentrations.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.1-6
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• 2006

We fabricated Si nano-wire MOSFET by using the conventional photolithography with a $1.5{\mu}m$ resolution. Si nano-wire was fabricated by using reactive ion etching (RIE), anisotropic wet etching and thermal oxidation on a silicon-on-insulator (SOI) substrate, and its width is 30 nm. Logarithmic circuit consisting of a NMOSFET and Si nano-wire MOSFET has been constructed for application to high-sensitivity image sensor. Its sensitivity was 1.12 mV/lux. The output voltage swing was 1.386 V.