• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.22-30
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• 1993

An integrated silicon pressure sensor with frequency output has been fabricated, measured, and tested. The standard bipolar process is applied and thin diaphragm was formed using EDP anisotropic etchant. Output frequency was 769 Hz-3.1 kHz at the pressure range of 0-10 psi. It operates at the temperature range of 0-50$^{\circ}C$. The frequency sensitivity was 233 Hz/psi and temperature sensitivity was 0.3 Hz/$^{\circ}C$. The power dissipation was 50mW.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.424-429
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• 2000

A novel differential pressure sensor has been developed with silicon beams embedded in a silicone rubber membrane. The transducer is usable for most applications involving exposure to harsh media. A piezoresistive differential pressure sensor using silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micro-machining technique using porous silicon etching. The pressure sensitivity is about $0.66\;{\mu}V/mmHg$ and the non-linearity is less than 0.1%.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.31-37
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• 1996

This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.328-333
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• 2006

In this paper, we developed a pressure measurement apparatus with the parallel structure to improve the measurement efficiency of pressure sensors by reducing the measurement time of pressure. The developed system has two parallel positions for loading Silicon pressure sensor and has a dual valve structure. The semiconductor pressure sensors prepared by Copal Electronics were used to confirm the performance of the developed measurement system. Two stage differential amplifier circuit was employed to amplify the weak output signal and the amplified output signal was improved utilizing a low-pass filter. New apparatus shows the measurement time of pressure two times shorter than that of conventional one with the serial structure, while both structures show the similar linear output versus pressure characteristics.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.186-191
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• 2017

In this study, we investigated the simultaneous detection properties of organic vapor, pressure difference, and magnetic field using a single rugate-structured free-standing porous silicon (RFPS) thin film. Both the wavelength and the intensity of the rugate peaks were changed in the reflectivity spectrum measured at the thin film surface while the organic vapor was exposed to the RFPS thin film. However, when the pressure difference and the magnetic field were exposed to the film, only the rugate peak intensity was changed. Therefore, it is possible to distinguish whether or not the organic vapor is detected by simultaneously changing the rugate peak wavelength and intensity. In addition, a method of distinguishing between the pressure difference and the magnetic field detection signal has been derived by rapidly modulating the direction of the magnetic field. This study shows that it is possible to simultaneously detect and distinguish various objects using a single RFPS thin film, and it is found that porous silicon can be utilized as a sensor sufficiently.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.350-354
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• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1978.1_1979.1
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• 2009

In this paper, we have proposed and demonstrated a tonometry sensor array for measuring arterial pulse pressure. A sensor module consists of 7 piezoresistive pressure sensor array. Wire-bonded connection was provided between silicon chip and lead frame. PDMS(poly-dimethylsiloxane) was coated on the sensor array to protect fragile sensor while faithfully transmitting the pressure of radial artery to the sensor. Tonometric pulse pressure can be measured by this packaged sensor array that provides the pressure value versus the output voltage.

• Journal of IKEEE
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• v.1 no.1 s.1
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1872-1874
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• 2001

This paper presents an implantable telemetry LC resonance-type pressure sensor to measure the cerebral ventricle pressure. The sensor consists of an inductor and a capacitor. The LC resonant circuit consists of the sensor and an external antenna coil that are coupled magnetically. The resonance frequency of the circuit decreases as the applied pressure increases the capacitance of the sensor. The sensor is designed in consideration of the biocompatibility and long lifetime for continuous monitoring of the ventricle pressure. The sensor is simple to fabricate and small in comparison with others reported previously. The inductor is fabricated by electroplating and the variable capacitor is constructed with a flexible p+ diaphragm. Also, the deflection of the diaphragm, the variation of the capacitance and the resonance frequency are analyzed and calculated.