• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.561-565
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• 2012

Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.93-99
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• 1996

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by optimizing a porosity of PSL. (author). refs., figs.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.46-46
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• 1996

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.754-759
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• 2013

Aluminum oxide($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since $Al_2O_3$ has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, $Al_2O_3$ layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form $Al_2O_3$ to reduce the process time. $Al_2O_3$ synthesized by ALD on c-Si (100) wafers contains a very thin interfacial $SiO_2$ layer, which was confirmed by FTIR and TEM. To improve passivation quality of $Al_2O_3$ layer, the deposition temperature was changed in range of $150{\sim}350^{\circ}C$, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in $250^{\circ}C$, $400^{\circ}C$ and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of $Al_2O_3$ deposited on p-type silicon.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.149-154
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• 2005

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

• 전기의세계
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• v.22 no.2
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• pp.11-18
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• 1973

This paper reports some results of Si and SiO$_{2}$ films obtained from the expitaxial growth by hydrogen reduction of SiCI$_{4}$ with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. The deposited Si and SiO$_{2}$ are studied by observing the process parameters affecting the rate of deposition, and the quantitative properties at the interface of Si and SiO$_{2}$ are also considered briefly according to the results of the optical absorption and the voltage-current characteristic of MOS etc. using step etching procedure for oxide films.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.