• Composites Research
• /
• v.20 no.5
• /
• pp.49-55
• /
• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.5
• /
• pp.230-237
• /
• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.20 no.10
• /
• pp.19-26
• /
• 2021

In fine-particle injection processing, hard fine particles, such as silicon carbide or aluminum oxide, are injected - using high-pressure air, and a small amount of material is removed by applying an impact to the workpiece by spraying at high speeds. In this study, a two-axis stage device capable of sequence control was developed to spray various shapes, such as circles and squares, on the surface during the micro-particle jetting process to understand the surface-shape micro-particle-processing characteristics. In the experimental device, two stepper motors were used for the linear movement of the two degree-of-freedom mechanism. The signal output from the microcontroller is - converted into a signal with a current sufficient to drive the stepper motor. The stepper motor rotates precisely in synchronization with the pulse-signal input from the outside, eliminating the need for a separate rotation-angle sensor. The major factors of the processing conditions are fine particles (silicon carbide, aluminum oxide), injection pressure, nozzle diameter, feed rate, and number of injection cycles. They were identified using the ANOVA technique on the design of the experimental method. Based on this, the surface roughness of the spraying surface, surface depth of the spraying surface, and radius of the corner of the spraying surface were measured, and depending on the characteristics, the required spraying conditions were studied.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.2
• /
• pp.96-113
• /
• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.05a
• /
• pp.417-420
• /
• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.20-23
• /
• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$, depth 124$\mu\textrm{m}$ , pitch 274$\mu\textrm{m}$ was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6nm Ra in grooving Si. Barrier ribs were formed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waveness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.11 no.5
• /
• pp.60-67
• /
• 2012

In the study, the effect grinding condition on the workpiece arithmetical average roughness(Ra) to 10 steps leading to cutting each section with the spindle rotational speed 8000rpm and feed rate 150mm/min of grinding in GC(green silicon carbide) grinding processing after heat treatment and non heat treatment of SCM415 material. Also the following conclusions were obtained analysis of stress distribution displacement and finite elements method(FEM) on assemble parts with 3+2 axis simultaneous control through grinding and gave a load 11kg on ATC arm both sides gave a load of 11kg. For the centerline average roughness(Ra) in the heat and non-heat treatment work pieces, which were appeared the most favorable in the fifth section were $0.511{\mu}m$ and $0.514{\mu}m$, that were shown in the near the straight line section was the smallest deformation of curve. In addition, the bad surface roughness appeared on the path is too long by changing angle, the more inclined depth of cut, because the chip discharging is not smoothly.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.17 no.1
• /
• pp.16-22
• /
• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.133-138
• /
• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Korean Journal of Materials Research
• /
• v.17 no.1
• /
• pp.31-36
• /
• 2007

Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.