• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.64-68
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• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• Bulletin of the Korean Chemical Society
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• v.31 no.5
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• pp.1257-1261
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• 2010

The electrochemical performances of anode composites comprising elemental silicon (Si), silicon monoxide (SiO), and graphite (C) were investigated. The composite devoid of elemental silicon (SiO:C = 1:1) and its carbon coated composite showed reduced capacity degradation with measured values of 606 and 584 mAh/g at the fiftieth cycle. The capacity retention nature when the composites were cycled followed the order of Si:SiO:C = 3:1:4 < Si:SiO:C = 2:2:4 < SiO:C = 1:1 < SiO:C = 1:1 (carbon coated). A comparison of the capacity retention properties for the composites in terms of the silicon content showed that a reduced silicon content increased the stability of the composite electrodes. Even though the carbon-coated composite delivered low capacity during cycling compared to the other composites, its low capacity degradation made the anode a better choice for lithium ion batteries.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.561-565
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• 2012

Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.616-621
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• 2009

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.295-298
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• 2007

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.248-253
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• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Korean Chemical Engineering Research
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• v.56 no.3
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• pp.320-326
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• 2018

In this study, Graphite/Silicon/Carbon (G/Si/C) composites were synthesized to improve the electrochemical properties of Graphite as an anode material of lithium ion battery. The prepared G/Si/C composites were analyzed by XRD, TGA and SEM. Also the electrochemical performances of G/Si/C composites as the anode were performed by constant current charge/discharge, rate performance, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1 vol%). Lithium ion battery using G/Si/C electrode showed better characteristics than graphite electrode. It was confirmed that as the silicon content increased, the capacity increased but the capacity retention ratio decreased. Also, it was shown that both the capacity and the rate performances were improved when using the Silicon (${\leq}25{\mu}m$). It is found that in the case of 10 wt% of Silicon (${\leq}25{\mu}m$), G/Si/C composites have the initial discharge capacity of 495 mAh/g, the capacity retention ratio of 89% and the retention rate capability of 80% in 2 C/0.1 C.