• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.30 no.1
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• pp.43-51
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• 2024

The addition of oxygen scavengers to food products helps to reduce oxygen exposure, thereby mitigating deterioration, including changes in taste, odor, and color, as well as inhibiting microbial growth. Despite the advantages of the existing non-metallic oxygen removal materials in terms of safety for the human body and suitability for use in microwave ovens, their utilization has been limited due to their slow reaction initiation speed. Therefore, in the current study, sodium metabisulfite was impregnated into various porous media, including halloysite nanoclay, activated carbon, montmorillonite, and silica gel. The oxygen scavenger, produced by impregnating silica gel with sodium metabisulfite, demonstrated a 425% improvement in the initial oxygen removal rate compared to pure sodium metabisulfite. Additionally, sachets containing an oxygen-removing composition with an enhanced oxygen removal rate effectively decreased the oxygen concentration to less than 0.5% on the third day of storage in apple packaging, without elevating carbon dioxide levels. Moreover, it proved effective in preventing the browning of the apple surface. Therefore, the SM/SG oxygen-removal composition can be effectively applied to active food packaging by controlling the oxygen concentration within the packaging.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.5
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• pp.761-766
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• 2012

Abrasive fluid jet polishing processes have been used for the polishing of optical surfaces with complex shapes. However, unstable and unpredictable polishing spots can be generated due to the fundamental property of an abrasive fluid jet that it begins to lose its coherence as the jet exits a nozzle. To solve such problems, MR fluid jet polishing has been suggested using a mixture of abrasives and MR fluid whose flow properties can be readily changed according to imposed magnetic field intensity. The MR fluid jet can be stabilized by imposed magnetic fields, thus it can remain collimated and coherent before it impinges upon the workpiece surface. In this study, MR fluid jet polishing characteristics of fused silica glass were investigated according to injection time and magnetic field intensity variations. Material removal rates and 3D profiles of the generated polishing spots were investigated. From the results, it can be confirmed that the developed MR fluid polishing system can be applied for stable and predictable precise polishing of optical parts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• Journal of Wetlands Research
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• v.20 no.3
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• pp.263-271
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• 2018

In this study, we analyzed the removal efficiency of ammonia nitrogen and phosphate dependant on the column depths using various absorbents such as zeolite silica sand, and activated carbon through the column test. In addition, we analyzed electrochemical adsorption behaviors of ammonia nitrogen and phosphate through the quantum mechanical calculation based on density functional theory calculation. Experimental results represent the removal efficiency of ammonia nitrogen and phosphate are zeolite > activated carbon > silica sand, and activated carbon > zeolite > silica sand, respectively. Zeolite shows high adsorption property for ammonia nitrogen over 90%, regardless of the column depth, while activated carbon exhibits high adsorption property for both ammonia nitrogen and phosphate as the column depth for filter media increases. Theoretical findings using DFT calculation for the adsorption behaviors of adsorbents (activated carbon and silica sand) and nutrients ($PO_4{^{3-}}$, $NH_4{^{+}}$) show that activated carbon represented narrower HOMO-LUMO band gap with high adsorption energy, and even more favorable environment for electron adsorption than silica sand, which leads to the effective removal of nutrients.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.21-26
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• 2015

CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.137-144
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• 2005

Silica in primary system combines with an alkali grammatical particle metal and forms the zeolite layer which is hindering the heat transfer on the surface of the cladding. Zeolite layer becomes the cause of the damage in this way. The problems of the NPP's primary system have been issued steadily by EPRI. Through a series of experiments of the laboratory scale, we confirmed the applicability of NF membrane for silica removal, as silica rejection rate of NF membrane is about $60\;{\sim}\;70\%$ and boron rejection rate is about $10\;{\sim}\;20\%$. We accomplished a site experiment about four NF membranes manufactured by FilmTec and Osmonics Inc. In experiment using 400L of SFP water, when operation pressure is $10kg_{f}/cm^2$, we confirmed that the silica rejection rate of NF90-2540 manufactured by FilmTec Inc. is about $98\%$, boron rejection rate is about $43\%$. The silica rejection rate of NF270-2540 is about $38\%$, boron rejection rate is about $3.5\%$. Afterward, through additional experiments, such as long term characteristic experiments, we are going to design a optimum NF membrane system for silica removal.