• 한국세라믹학회지
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• 제37권4호
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• pp.376-380
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• 2000

Carbon nanofibers with an average diameter of 100nm were reacted with SiO vapor generated from a mixture of Si and SiO2 to produce silicon carbide nanofibers at temperature ranging 1200∼1500$^{\circ}C$ under vacuum. The nanofiber reacted at 1200$^{\circ}C$ for two hours consisted of silicon carbide with an average crystallite size of 10-20nm, amorphous silica and a significant amount of unreacted carbon. The surface area of silicon carbide nanofiber, obtained after removal of amorphous silica and unreacted carbon from converted carbon nanofibers at 1200$^{\circ}C$, was as high as 150㎡/g. With increasing reaction temperature to 1500$^{\circ}C$, the surface area was decreased to 14㎡/g. Growth of SiC crystallite size with increasing conversion temperature of carbon nanofiber was confirmed from Scherrer formula using the (111) diffraction line and TEM images of converted carbon nanofibers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.113-114
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• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• 자원리싸이클링
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• 제17권6호
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• pp.34-42
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• 2008

본 연구에서는 yellow silicomolybdate method를 이용하여 규산나트륨 수용액의 특성, 핵 생성에 필요한 규산나트륨 수용액의 산화반응 특성 그리고 출발용액의 솔젤 반응특성을 기초로 하여 실리카 솔 형성에 대한 반응속도론적 고찰을 하였다. $SiO_2$를 2wt% 함유한 규산나트륨 수용액은 황산으로 산화시키기에 적당하였으며, 규산나트륨 수용액중의 나트륨 이온을 제거한 후, 안정된 실리 케이트 수용액을 얻기 위한 용액의 pH는 9 이상이었다. 규산종과 실리카 핵 표면 사이의 축중합 반응에 관한 속도론적 연구는 반응온도 $20{\sim}80^{\circ}C$, 수용액의 pH 10에서 수행하였다. 반응은 두 영역으로 구분되는데, 규산종의 농도가 높은 영역에서는 축중합 반응에 의해 제한을 받으며, 낮은 농도 영역에서는 화학흡착된 규산종이 실리카로 응축되는 공정에 영향을 미친다. 전체 축중합 반응은 규산종 농도의 1차 반응으로 진행되며, 축중합 반응은 무정형 실리카의 용해도에 접근하기 보다는 가평형점($C_x$) 향하여 진행된다. 본 연구조건에서 무정형 실리카의 용해열은 3.34 kcal/mol이었고 축중합 반응의 활성화에너지는 3.16 kcal/mol이었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.35-36
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• 2012

• 대한기계학회논문집A
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• 제33권10호
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.256-259
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• 2003

To develop cleaning process various particles should be deposited on wafer surfaces to measure particle removal efficiencies. The purpose of the article in to evaluate, removal efficient)r of silica and alumina particles from wafer surfaces when they are deposited by dry and wet method. Dry deposition in air and wet spray deposition using solutions are used. van der Waals are considered to calculate the adhesion force of particles on surfaces. Higher adhesion force is measured on alumina particles on silicon when particles are deposited in air.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국정밀공학회지
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• 제13권6호
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• pp.45-51
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• 1996

Silicon wafers are required to be finished under the roughness of nanometer order for the subsequent chip fabrication processes. Recently, the finish grinding techniques have been researched for the improvement of accuracy and surface roughness simultaneously. Among them, the grinding technique using fine abrasive has been known as an easily accessible method. However, the manufacture of the fine grit grinding wheel has been very difficult because of the coherence of the grits. In this paper, the development of the ultrafine grit silica($SiO_2$) grinding wheel by the combination of the binder coating and the vacuum forming techniques is reported. And, the mechanochemical removal effects of the grinding conditions are discussed. Finally, a successful result of Ra O.4nm. Rmax 4nm in the ground surface roughness of a 6 inch silicon wafer was achieved.