• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 한국포장학회지
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• 제30권1호
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• pp.43-51
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• 2024

The addition of oxygen scavengers to food products helps to reduce oxygen exposure, thereby mitigating deterioration, including changes in taste, odor, and color, as well as inhibiting microbial growth. Despite the advantages of the existing non-metallic oxygen removal materials in terms of safety for the human body and suitability for use in microwave ovens, their utilization has been limited due to their slow reaction initiation speed. Therefore, in the current study, sodium metabisulfite was impregnated into various porous media, including halloysite nanoclay, activated carbon, montmorillonite, and silica gel. The oxygen scavenger, produced by impregnating silica gel with sodium metabisulfite, demonstrated a 425% improvement in the initial oxygen removal rate compared to pure sodium metabisulfite. Additionally, sachets containing an oxygen-removing composition with an enhanced oxygen removal rate effectively decreased the oxygen concentration to less than 0.5% on the third day of storage in apple packaging, without elevating carbon dioxide levels. Moreover, it proved effective in preventing the browning of the apple surface. Therefore, the SM/SG oxygen-removal composition can be effectively applied to active food packaging by controlling the oxygen concentration within the packaging.

• 한국생산제조학회지
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• 제21권5호
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• pp.761-766
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• 2012

Abrasive fluid jet polishing processes have been used for the polishing of optical surfaces with complex shapes. However, unstable and unpredictable polishing spots can be generated due to the fundamental property of an abrasive fluid jet that it begins to lose its coherence as the jet exits a nozzle. To solve such problems, MR fluid jet polishing has been suggested using a mixture of abrasives and MR fluid whose flow properties can be readily changed according to imposed magnetic field intensity. The MR fluid jet can be stabilized by imposed magnetic fields, thus it can remain collimated and coherent before it impinges upon the workpiece surface. In this study, MR fluid jet polishing characteristics of fused silica glass were investigated according to injection time and magnetic field intensity variations. Material removal rates and 3D profiles of the generated polishing spots were investigated. From the results, it can be confirmed that the developed MR fluid polishing system can be applied for stable and predictable precise polishing of optical parts.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• 한국습지학회지
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• 제20권3호
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• pp.263-271
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• 2018

생활 하수 및 농축산 폐수를 통한 하천으로의 다량의 질소와 인의 유입은 부영양화를 초래하여 하천 자정작용에 악영향을 끼친다. 본 연구에서는 컬럼 실험을 통한 흡착제(활성탄, 제올라이트, 여과사)의 여재층 높이에 따른 암모니아성 질소, 인산염 제거특성을 분석하고, 밀도범함수이론(density functional theory, DFT)를 바탕으로 한 양자역학적 전산 모사를 통해 흡착제와 암모니아성질소($NH_4{^{+}}$)와 인산염($PO_4{^{3-}}$)에 대한 화학적 흡착 거동을 분석하였다. 컬럼 실험 결과, 암모니아성 질소에 대한 제거효율은 제올라이트(95.1%)>활성탄(65.8%)>여과사(10.7%), 인산염의 제거효율은 활성탄(99.6%)>제올라이트(18.8%)>여과사(10.9%) 순으로 나타났다. 제올라이트의 경우, 여재층의 높이에 관계없이 90%이상의 암모니아성 질소에 대한 높은 흡착력을 가졌고, 활성탄의 경우 여재층의 높이가 증가할수록 인과 질소에 대한 높은 흡착효율을 가졌다. DFT를 이용한 흡착제(산화 알루미늄, 활성탄, 여과사)와 영양염류($PO_4{^{3-}}$, $NH_4{^{+}}$)에 대한 흡착거동 분석결과, 제올라이트는 암모니아성 질소($NH_4{^{+}}$)에 대한 높은 흡착에너지(-6.43 eV)를 가졌다. 활성탄의 경우 여과사보다 좁은 HOMO-LUMO 밴드갭을 가져, 전자 이동에 유리한 환경을 조성하여 높은 흡착에너지(-7.10eV)로 영양염류가 제거되는 것을 확인할 수 있었다.

• 한국재료학회지
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• 제25권1호
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• pp.21-26
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• 2015

CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

• 한국재료학회지
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• 제15권6호
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• pp.426-430
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• 2005

Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 춘계 학술대회
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• pp.137-144
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• 2005

원전 1차 계통내에 실리카는 알카리 토금속(Ca, Mg, Al 등)과 결합하여 원전 연료 피복재에 열전달을 방해하는 규석층(Zeolite)를 형성한다. 이렇게 형성된 규석층은 원전 피복재 손상의 원인이 된다. 이러한 원전 1차 계통내 실리카의 문제점들은 EPRI 보고서 등에 그 문제점이 꾸준히 제기되어 왔으며 이러한 문제점들을 해결하기 위하여 막분리 공정을 이용하고자 하였다. 먼저 실험실 규모의 실험을 통해 NF막의 실리카 제거율이 약 $60\;{\sim}\;70\%$, Boron 제거율이 약 $10\;{\sim}\;20\%$로 그 적용 가능성을 확인하였으며, FilmTec과 Osmonics 사 NF막 제품 4종에 대하여 현장 실험을 수행하였다. 현장 사용후연료 저장 붕산수 400L를 시료로 한 실험에서 운전압력 $10kg_{f}/cm^2$에서 FilmTec 사의 NF90-2540이 실리카 제거율이 약 $98\%$, Boron 제거율이 약 $43\%$로 확인되었으며 또한 NF270-2540이 실리카 제거율이 약 $38\%$, Boron 제거율이 약 $3.5\%$로 확인되었다. 이를 바탕으로 장기운전 특성 실험 등의 추가적인 연구를 통해 최적의 실리카 제거를 위한 막 분리공정을 설계 할 예정이다.