• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1144-1149
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• 2001

In this research, the fabrication of Si/SiO$_2$optical waveguide amplifier by FHD(Flame Hydrolysis Deposition) and Solution Doping was carried out. It was observed that the reduction of fluorescence was prevented up to 0.14 wt% Er whn 0.48 wt% Al was doped and the FWHA of $1.5mutextrm{m}$ fluorescence band increased by 5 nm as increasing amount of Al. Therefore from these results, we could confirm depressing concentration quenching of Er ions and increasing FWHM of fluorescence spectrum by addition of Al.

• Korean Journal of Optics and Photonics
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• v.33 no.4
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• pp.137-145
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• 2022

A directional coupler device, one of the fundamental components of photonic integrated circuits, distributes optical power by evanescent field coupling between two adjacent optical waveguides. In this paper, the design process for manufacturing a directional coupler device is reviewed, and the accuracy of the design results, as seen from the characteristics of the actual fabricated device, is confirmed. When designing a directional coupler device through a two-dimensional (2D) beam-propagation-method (BPM) simulation, an optical structure is converted to a two-dimensional planar structure through the effective index method. After fabricating the directional coupler device array, the characteristics are measured. To supplement the 2D-BPM results that are different from the experimental results, a 3D-BPM simulation is performed. Although 3D-BPM simulation requires more computational resources, the simulation result is closer to the experimental results. Furthermore, the waveguide core refractive index used in 3D-BPM is adjusted to produce a simulation result consistent with the experimental results. The proposed design procedure enables accurate design of directional coupler devices, predicting the experimental results based on 3D-BPM.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.186-187
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• 2002

광통신의 최종 목적은 각 가정까지 광섬유를 연결하여 일반인들도 많은 정보를 신속하고 쉽게 접할 수 있게 하는 것, 즉, 광가입자망(Fiber To The Home, FTTH)의 실현이라고 할 수 있다. 그러나 여러 가지 문제점으로 인해 아직까지는 일부 실험 지역 내에 국한되어 있다. 광가입자망의 실현을 위한 이론적 방법으로 광섬유를 정보 전달소에서 각 가정까지 직접 연결하는 것이 있으나, 이 방법은 경제적 면에서 경쟁력을 갖출 수 없을 뿐 아니라 물리적인 부피 증가로 인해 현실적으로 실현 불가능하다고 할 수 있다. (중략)

• Journal of the Optical Society of Korea
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• v.19 no.5
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• pp.449-455
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• 2015

In this study we propose a new photonic crystal fiber (PCF) design that simultaneously offers broadband single-mode operation, high birefringence, and large normal dispersion in the optical-communication wavelength regime. The waveguide is based on a hybrid square-lattice PCF (HS-PCF) that has circular air holes of two different diameters alternating in the cladding, plus a pure silica defect at the center. The optical properties of the guided modes are analyzed numerically by the finite-element method (FEM) with a perfectly matched layer as the boundary condition. The optimized HS-PCF has a dispersion coefficient of $-601.67\;ps\;nm^{-1}\;km^{-1}$ and a high birefringence of $1.025{\times}10^{-2}$ at $1.55{\mu}m$. In addition, over the S+C+L+U wavelength bands the proposed HS-PCF with ultraflat birefringence with a slope on the order of $10^{-5}$.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.499-504
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• 1994

Ti-doped BSG (borosilicate glass) soot films on the silicone substrate have been deposited in the mixture of $SiCl_{4}$, TMB, $TiCL_{4}$ by flame hydrolysis deposition technique. The soot films are melted to form integrated fine glass films. We can fabricate thick films of serveral $10{\mu}m$ with deposition rate,more than $0.5{\mu}m$/min. Refractive index difference of BSG films are increased to more than 0.3% as function of the amount of Ti dopant. As a result of the process an optical waveguide which is simmilar with dimmension and refractive difference of optical fiber is produced. $BCl_{3}$ is widely used for B dopant, but we abtained the good results by the use of TMB in place of $BCl_{3}$. The melting point of silica soot glass is reduced to $1200^{\circ}C$ increasing B dopant. From FTIR analysis $B_2O_3$ content up to about lOmol% in BSG films. films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.739-745
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• 1998

The objective of this paper is to provide experimental data of Er(rare- earth)doped $SiO_2$thin film made by sputtering methods. The deposition rate of silica glass by sputtering method was 55$\AA$/min. In EDD measurements, the average Er concentration in the deposited film was 0.77(wt%). After annealing at $900^{\circ}C$, the Cl concentration decreased from 3.79(wt%) to 1.52(wt%). The refractive indices of the core $n_1$, cladding $n_2$ were 1.458, 1.558 respectively at 632.8 nm. The refractive index difference between core and cladding, $\Delta$n was 0.1. The refractive index profile of core and cladding interface shows step profile. In the study, $SiO_2$ glass films of Si wafer were successfully doped with active erbium. Therefore, this experimental data will be applicable for fabrications of Er doped planar integrated optical device.

• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.33-36
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• 2000

KrF excimer laser, which is useful for fabrication of fiber gratings, was irradiated on the PLC-type WDM directional coupler and the transmission wavelength shift was observed as a function of UV exposure time. The effective refractive index change of rectangular silica waveguide was calculated from the wavelength shift measurement and the coupled mode theory. heory.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.28-29
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• 2000

Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).