• 제목/요약/키워드: Sidewall

검색결과 348건 처리시간 0.028초

축방향 유입과 반경방향 유출이 있는 회전용기 내의 유동해석 (Flow Analysis in a Rotating Container with Axial Injection and Radial Ejection)

  • 박준상;손진국
    • 한국가시화정보학회지
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    • 제9권1호
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    • pp.49-54
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    • 2011
  • An investigation has been made of a viscous incompressible flow in a circular cylindrical tank. The flow is driven by the spinning bottom disk of tank together with/without central injection and radial uniform-ejection through the sidewall. Numerical solutions of steady and unsteady flows to 3-dimensional Navier-Stokes equation were obtained for several cases of injection strength. In a moderate flow rate of injection, the mass transfer occurs through the boundary layers but, as the flow rate increases, the inner region far from the container walls takes part in mass transfer.

Fabrication of a (100) Silicon Master Using Anisotropic Wet Etching for Embossing

  • Jung, Yu-Min;Kim, Yeong-Cheol
    • 한국세라믹학회지
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    • 제42권10호
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    • pp.645-648
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    • 2005
  • To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.

AlGaAs/GaAs HBT를 사용한 10Gbit/s 리미팅증폭기 (10Gbit/s AlGaAs/GaAs HBT limiting amplifier)

  • 곽봉신;박문수
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.15-22
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    • 1997
  • A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

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Characterization and Design Consideration of 80-nm Self-Aligned N-/P-Channel I-MOS Devices

  • Choi, Woo-Young;Lee, Jong-Duk;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권1호
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    • pp.43-51
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    • 2006
  • 80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

$O_2$ RIE 공정을 이용한 20{\mu}m$ 두께의 폴리이미드 마이크로 구조물의 제작 (Fabrication of the 20{\mu}m$-height Polyimide Microstructure Using $O_2$ RIE Process)

  • 백창욱;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.600-602
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    • 1995
  • Using the $O_2$ RIE process, 20{\mu}m$-height polyimide microstructures are fabricated. In LIGA-like process, metal microstructure can be formed by the electroplating using these polyimide microstructures as a plating mould. Reactive ion Etching technique using oxygen gas is used for the patterning of polyimide. The etching rate of the polyimide is increased with increased pressure and RF power. The anisotropic vertical sidewall can be obtained at low pressure, but the etched surface state is not so good yet. "Micrograss", which is formed during the RIE and disturbs uniform electroplating, can be removed effectively by the wet itching of the chromium sacrificial layer. More studies about the improvement of an etched surface state and the removal of microsgrass are needed.

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관로곡률반경과 케이블 포설장력에 관한 연구 (A Study of Relation Between Bending Radius and Pulling Tension)

  • 이후영;선상진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.418-419
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    • 2008
  • 관로에 케이블을 포설할 때에는 최대포설장력(Maximum Pulling Tension Factors)과 허용측압(Sidewall Bearing Pressure)이 고려되어야 한다. 최대포설장력은 케이블의 무게와 관로의 마찰계수에 의해 계산이 되고 관로의 경간에 의해 변화하게 된다. 측압은 관로의 곡률반경, 포설장력, 케이블 무게 등과 직접 관련이 있다. 관로의 곡률반경은 현장에서 도로의 길이와 현의길이, 호의 높이 등을 측정하여 구하기도 하고 도면상에서 계산에 의해 구하기도 한다. 곡률반경과 포설장력, 측압의 관계성을 비교해 보면 포설장력은 곡률반경의 영향을 거의 받지 않지만 측압은 곡률반경의 영향을 크게 받는다. 허용측압이상의 측압이 굴곡부에서 관로와 케이블사이에 발생하면 관로와 케이블이 손상되기 때문에 관로 설계시에는 측압을 반드시 고려하여야 된다.

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케스케이드 실험을 위한 벽면형상 설계에 관한 연구 (A Study of Wall Shape Design for Cascade Experiment)

  • 조종현;조봉수;김재실;조수용
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2008년도 춘계학술대회논문집
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    • pp.148-151
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    • 2008
  • In a double-passage cascade apparatus, only two blades are installed in order to increase the accuracy of experimental result by applying bigger blade than the size of multi-blades on the same apparatus. However, this causes difficulties to make correct periodic condition. In this study, sidewalls are designed to meet periodic condition without removing the operating fluid or adjusting tail boards. Surface Mach number on the blade surface is applied to a responsible variable, and 12 design variables which are related with sidewall profile control are selected. A gradient based optimization is adopted for wall design and CFX-11 is used for the internal flow computation. The computed result shows that it could obtain the same flow structure by modifying only the sidewalls of the double-passage cascade apparatus.

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영역분할법에 의한 SIMPLER 기법의 병렬화 (Parallel Implementation of SIMPLER by Using Domain Decomposition Technique)

  • 곽호상
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 1997년도 추계 학술대회논문집
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    • pp.23-28
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    • 1997
  • A parallel implementation is made of a two-dimensional finite volume model based on the SIMPLER. The solution domain is decomposed into several subdomains and the solution at each subdomain is acquired by parallel use of multiple processors. Communications between processors are accomplished by using the standard MPI and the Cray-specific SHMEM. The parallelization method for the overall solution procedure to the Navier-Stokes equations is described in detail, The parallel implementation is validated on the Cray T3E system for a benchmark problem of natural convection in a sidewall-heated cavity. The parallel performance is assessed and the issues encountered in achieving a high-performance parallel model are elaborated.

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실험적 방법에 의한 Tire 변형 특성 연구 (Experimental study on the deformation property of pneumatic tires - strain gauge method)

  • 강수철;구본희
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 춘계학술대회논문집A
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    • pp.716-721
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    • 2001
  • The present study describes the experimental method to measure the strain of tire. In this study. the strain distributions of tire with air pressure and vertical load were measured at the bead filler edge region and on the carcass cord using strain gauges and the results were compared with indoor bead durability test results. The strain amplitude of carcass cord near the rim check line of tire is one of the main factors that affects bead durability characteristic.

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ICP ETCHING OF TUNGSTEN FOR X-RAY MASKS

  • Jeong, C.;Song, K.;Park, C.;Jeon, Y.;Lee, D.;Ahn, J.
    • 한국표면공학회지
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    • 제29권6호
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    • pp.869-875
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    • 1996
  • In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

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