• Journal of computational fluids engineering
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• v.3 no.1
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• pp.22-29
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• 1998

Parallel implementation is conducted for a SIMPLER finite volume model. The present parallelism is based on domain decomposition and explicit message passing using MPI and SHMEM. Two parallel solvers to tridiagonal matrix equation are employed. The implementation is verified on the Cray T3E system for a benchmark problem of natural convection in a sidewall-heated cavity. The test results illustrate good scalability of the present parallel models. Performance issues are elaborated in view of convergence as well as conventional parallel overheads and single processor performance. The effectiveness of a localized matrix solution algorithm is demonstrated.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1513_1514
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• 2009

This paper reports on a fabrication of novel substrate integrated waveguide (SIW)-based shielded stripline applicable to the broadband transverse electromagnetic (TEM) single-mode propagation. We suggested a structure for half-SIW and half-shielded stripline, which combined through the benzocyclobutene (BCB) bonding layer. The electrical interconnection between the sidewall of anisotropic wet-etched silicon and patterned BCB layers is measured subsequent to the metalization on the side wall. The proposed SIW-based shielded stripline has great potential in terms of simple fabrication, integration with planar circuits and monolithic system fabricated on a SIW structure.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.632-635
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• 2007

Automobile tire has very complicated shape and is composed of rubber, steel cord and ply cord, Tread pattern of tire is very essential for the basic characteristics of tire, such as braking, acceleration and comfortableness. Tire components such as tread, sidewall, and spex are prepared by forcing uncured rubber compound through an extruder to shape during curing process. Because of its complexity of shape, adaptive mesh refinement was used for the analysis of tire tread. Effects of forming variables were evaluated.

• Wind and Structures
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• v.13 no.4
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• pp.363-374
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• 2010

Appropriate scaling methods for wind tunnel modelling of building internal pressures induced through a dominant opening were investigated. In particular, model cavity volume distortion and geometric scaling of the opening details were studied. It was found that while model volume distortion may be used to scale down buildings for wind tunnel studies on internal pressure, the implementation of the added volume must be done with care so as not to create two cavity resonance systems. Incorrect scaling of opening details was also found to generate incorrect internal pressure characteristics. Furthermore, the effective air slug or jet was found to be longer when the opening was near a floor or sidewall as evidenced by somewhat lower Helmholtz frequencies. It is also shown that tangential flow excitation of Helmholtz resonance for off-centre openings in normal flow is also possible.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.977-982
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• 2000

Conventional transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area. These consequently have disadvantage for high speed switching performance. In this paper, a lateral structure transistor which has minimized parasitic capacitance by using SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics are designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance is proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed lateral structure transistor is certified through the V$\_$CE/-I$\_$C/ characteristics curve, h$\_$FE/-I$\_$C/ characteristics, and GP-plot. Cutoff Frequency is 13.7㎓.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Elastomers and Composites
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• v.5 no.2
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• pp.181-187
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• 1970

In vulcanizates of NR/SBR blending compounds, the physical properties decrease as the contents of SBR increase for the most part. but the abrasives showed reverse performance. However, since these conditions enough satisfy the requirements of tread, carcass and sidewall of tire, we found it was possible to take use of the quantity of SBR contained high on tire manufacturing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1535-1544
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• 1989

The overhang structure of photoresist in optical lithography was studied for the metallization of GaAs-related devices throughout lift-off method. Optical contact aligner with a dose of 8.5 m J/cm\ulcornerand with a wavelength of 300mm was used for ultraviolet exposure of single layer of S1400-27 photoresist. The overhang thickness shows a linear relationship with the soaking time in monochlorobenzene, which its magnitude becomes high at elevated softbake temperature. Such process conditions as a low softbake temperature, a long monochlorohbenzene soaking time and a little exposed energy make the development rate of photoresist lower. The optimum process conditions to obtain a target line-width, which include an appropriate overhang structure such as complete separation between the sidewall of photoresist pattern and the deposited metal edge, are determined as the softbake temperature of 64-74\ulcornerC, the monochlorobenzene soaking time of 10-15min, the ultraviolet exposure time of 70-100sec and the development time of 50-80sec.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.946-953
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• 1999

The etching characteristics of Er-doped sodium borosilicate glass film for the planar optical waveguides were investigated using reactive ion etching. The etch rate decreased as the pressure in creased but increased as the RF power increased. The etch rate increased as the flow rate C2F gas and the amount of O2 addition increased but decreased over critical point (C2F6 7,5 accm O2 20%) The etch rate was 180${\AA}$/min under C2F6 7.5 sccm O2 20% RF power 270 W, pressure 150 mTorr. With this optimum etching condition and subsequent heat treatment at 975$^{\circ}C$ for 30 minutes planar optical waveguides having improved sidewall roughness were fabricated successfully.