• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.87-92
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• 2016

Due to its stability at high temperature and its layered structure, $Ti_3SiC_2$ MAX phase was considered to the interphase of $SiC_f/SiC$ composite. In this study, $Ti_3SiC_2$ MAX phase powder was deposited on SiC fiber via the electrophoretic deposition (EPD) method. The Zeta potential of the $Ti_3SiC_2$ suspension with and without polyethyleneimine as a dispersant was measured to determine the conditions of the EPD experiments. Using a suspension with 0.03 wt.% ball milled $Ti_3SiC_2$ powder and 0.3 wt.% PEI, $Ti_3SiC_2$ MAX phase was successfully coated on SiC fiber with an EPD voltage of 10 V for 2 h. Most of the coated $Ti_3SiC_2$ powders are composed of spherical particles. Part of the $Ti_3SiC_2$ powders that are platelet shaped are oriented parallel to the SiC fiber surface. From these results we expect that $Ti_3SiC_2$ can be applied to the interphase of $SiC_f/SiC$ composites.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.410-415
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• 2013

$ZrB_2$-SiC ceramics are fabricated via hot pressing with different ratios of submicron or nano-sized SiC in a $ZrB_2$-20 vol%SiC system, in order to examine the effect of the SiC size ratio on the microstructures and physical properties, such as thermal conductivity, hardness, and flexural strength, of $ZrB_2$-SiC ceramics. Five different $ZrB_2$-SiC ceramics ($ZrB_2$-20 vol%[(1-x)SiC + xnanoSiC] where x = 0.0, 0.2, 0.5, 0.8, 1.0) are prepared in this study. The mean SiC particle sizes in the sintered bodies are highly dependent on the ratio of nano-sized SiC. The thermal conductivities of the $ZrB_2$-SiC ceramics increase with the ratio of nano-sized SiC, which is consistent with the percolation behavior. In addition, the $ZrB_2$-SiC ceramics with smaller mean SiC particle sizes exhibit enhanced mechanical properties, such as hardness and flexural strength, which can be explained using the Hall-Petch relation.

• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.1044-1055
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• 1994

The preparation of ZrC/SiC mixed powders from $ZrSiO_4/C$ and $ZrSiO_4/Al/C$ systems was attempted in the temperature range below $1600^{\circ}C$ under Ar or $Ar/H_2$ gas flow(100-500ml/min). The formation mechanism and kinetics of ZrC/SiC were suggested and the resultant powders were characterized. In $ZrSiO_4/C$ system, ZrC and SiC were formed by competitive reaction of $ZrO_2(s)$ and SiO(g) with carbon at temperature higher than $1400^{\circ}C$. The apparent activation energy for the formation of ZrC was approximately 18.5kcal/mol($1400-1600^{\circ}C$). In $ZrSiO_4/Al/C$ system, ZrC was formed by reaction of ZrO(g) with Al(l, g) and carbon at temperature higher than $1200^{\circ}C$, and SiC was formed by reduction-carbonization of SiO(g) with Al(l, g) and carbon at temperature higher than $1300^{\circ}C$. The products obtained at $1600^{\circ}C$ for 5h consisted of ZrC with lattice constant of $4.679{\AA}$ and crystallite size of $640{\AA}$, and SiC with lattice constant of $4.135{\AA}$ and crystallize size of $500{\AA}$. And also, the mean particle size was about $21.8{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.10 no.6
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• pp.78-84
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• 2001

In the present study, SiCSi-$Si_3 N_4$-SiC ceramic composites that contained up to 30 wt% of dispersed SiC particles were fabricat-ed cia hot-pressing with an oxynitride glass. The microstructure, the mechanical properties and the cutting performance of resulting ceramic composites were investigated. By fixing the composition as $Si_3 N_4$-20wf%SiC, the effect of sintering time on the microstructure, the mechanical properties and the cutting performance were also investigated. The longer sir-tering time is, the bigger the grain size of SiC is. The fracture toughness(-$K_k$) of the $Si_3 N_4$-SiC ceramic composites increased with the increase of gain size, while the flexural strengthh($\sigma$) decreased. For machining SCM440, the insert with 20wt%r SiC sintered for 8 hours showed the longest tool life while the insert with 20wt% SiC sintered for 12 hours showed the longest tool life for machining gray cast iron.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• Journal of Powder Materials
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• v.10 no.1
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• pp.57-62
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• 2003

The effect of bedding on the microstructure of $Si_3N_4$ added with ultra-fine SiC was investigated. The bedding and the addition of ultra-fine SiC effectively inhibited grain growth of $Si_3N_4$ matrix grain. The microstructures of the specimens sintered with bedding powder consisted of fine-grains as compared with the specimens sintered without bedding powder. In addition, the grain size and the difference of grain size between the specimens sintered with bedding and without bedding was reduced with increasing SiC content. Some ultra-fine SiC particles were trapped in the $Si_3N_4$ grains growed. The number of SiC particles trapped in the $Si_3N_4$ grains increased with increasing the grain growth. When ultra-fine SiC particles were added in the $Si_3N_4$ ceramics, the strength was improved but the toughness was decreased, which was considered to be resulted from the decrease of the grain size.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.520-528
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• 1994

An investigation was carried out to understand the effect of the amount of free silicon on the tribological properties of Si-SiC. The specimens of dense Si-SiC composites with various amount of free silicon were fabricated in the temperature of 175$0^{\circ}C$ after molding under various pressure. Wear properties were measured by ball-on-plate wear tester under the constant weight of 4 Kgf at constant sliding speed of 500 mm/sec in water. As the result, the Rockwell hardness and fracture strength of Si-SiC composites remained nearly constant up to 16.62 vol% of free silicon in the Si-SiC microstructure. The Si-SiC composites containing the free silicon of 16.62 vol% was considered to be prominent in the tribological properties, which had the friction coefficient of 0.08 and the specific wear rate of 2.4$\times$10-8$\textrm{mm}^2$Kgf-1. The analysis of the wear surface indicated the complicated processes occuring on the surface such as fine polishing, abrasion, microfracture.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.8
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• pp.1015-1021
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• 2010

In this study, the effect of the C/SiC composition ratio on the impact damage of a reaction sintered SiC (RS-SiC) plates was evaluated. An impact test was conducted by using an air gun. The impacter used was a steel ball with a diameter of 2 mm, and the impact velocities were 113, 122, and 180 m/s. The RS-SiC plates were $20\times20\times3$ mm with different C/SiC composition ratios. The ring crack diameters damaged by a steel ball were determined using SEM images. It was observed that the maximum diameter increased with increasing impact velocity, and it rapidly changed with increasing C/SiC composition ratio because of the effect of residual Si and the variation flexural strength. Cone cracks were formed in the case of C/SiC composition ratios of 0.4~0.5, this indicated that the impact damage changed from a ring crack to a cone crack in this critical range of C/SiC composition ratios. The C/SiC composition ratio of 0.3 was determined to be the optimal ratio for the RS-SiC manufacturing process.