• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.935-938
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• 2011

The etching characteristics of ZnO and etch selectivities of ZnO to $SiO_2$ in $SF_6$/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at $SF_6$(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in $SF_6$/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.291-291
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• 2013

The wettability of TiO2 layers is controlled by forming highly ordered arrays of nanocones using nanopatterning, based on self-assembly and dry etching. Nanopatterning of TiO2 layers is achieved via formation of self-assembled monolayers of SiO2 spheres fabricated using the Langmuir-Blodgett technique, followed by dry etching. Compared to a thin film TiO2 layer, the nanopatterned TiO2 samples show a smaller static water contact angle, where the water contact angle decreases as the etching time increases, which is attributed to the Wenzel equation. When TiO2 layers are coated by 1H,1H,2H,2H-perfluorooctyltrichlorosilane, we observed the opposite behavior, exhibiting superhydrophobicity (up to contact angle of $155^{\circ}$) on the nanopatterned TiO2 layers. Self-assembled nanopatterning of the TiO2 layer may provide an advanced method for producing multifunctional transparent layers with self-cleaning properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1208-1211
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• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.395-400
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• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.151-154
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• 2012

A hydrophobic surface has been fabricated on aluminum by two-step surface treatment processes consisting of structure modification and surface coating. Nature inspired micro nano scale structures were artificially created on the aluminum surface by a blasting and Ar ion beam etching. And a hydrophobic thin film was coated by a trimethylsilane ($(CH_3)_3SiH$) plasma deposition to minimize the surface energy of the micro nano structure surface. The contact angle of micro nano structured aluminum surface with the trimethylsilane coating was $123^{\circ}$ (surface energy: 9.05 $mJ/m^2$), but the contact angle of only trimethylsilane coated sample without the micro nano surface structure was $92^{\circ}$ (surface energy: 99.15 $mJ/m^2$). In the hydrophobic treatment of aluminum surface, a trimethylsilane coated sample having the micro nano structure was more effective than only trimethylsilane coated sample without the micro nano structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.253-256
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• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.814-818
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• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.