• 한국세라믹학회지
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• 제29권9호
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• pp.729-738
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• 1992

The glass formation and structural change with the glass compositions were investigated in the CaO-P2O5-SiO2 system with less than 40 wt% of P2O5. The glass formation range was determined by XRD, SEM and EDS techniques for water quenched specimens. The structural analyses were made for binary CaO-SiO2 glasses and ternary CaO-P2O5-SiO2 glasses by using FT-IR and Raman spectroscopy. The glass formation was affected by CaO/SiO2 mole ratio, P2O5 content and primary crystalline phase. The stable glass formation range was found when the transformed CaO/SiO2 mole ratio (new factor derived from structural changes) was in the range of 0.72~1.15 with less than 10 mol% of P2O5. The structural analyses of CaO-SiO2 glasses indicated that as the CaO/SiO2 ratio was increased, the nonbridging oxygens in the structural unit of the glasses were increased. With addition of P2O5 to CaO-SiO2 glasses, the P2O5 enhanced the polymerization of [SiO4] tetrahedra unit in CaO-SiO2 glasses, which contained a large portion of nonbridging oxygen. The phosphate eliminated nonbridging oxygens from silicate species, forcing polymerization of silicate structures and produced in [PO4] monomer in glasses. When added P2O5 was kept constant, the structural change with various CaO/SiO2 ratio was very similar to that of CaO-SiO2 glasses.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• 한국세라믹학회지
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• 제32권5호
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• 한국세라믹학회지
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• 제27권5호
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• 한국세라믹학회지
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• 제23권5호
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• pp.47-54
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• 1986

The structures of crystalline vitreous and liquid $SiO_2$ were Monte carlo simulated employing the potential energy function comprising Lennard-Jones 2-body and Axilrod-Teller 3-body potentials. Although the Si-O-Si angular distribution functions obtained in the simulation appear to be higher than the experimental results the other simulation results including SiO, O-O and Si-Si radial distribution functions and O-Si-O anglular distribution functions agree well with experimental data within acceptable limits. Themost important outcome in this study is that various $SiO_2$forms were successfully reproduced with the same potential energy function.

• Journal of Electrochemical Science and Technology
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• 제2권3호
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• pp.146-151
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• 2011

The formation of Li-Si-O phases, $Li_4SiO_4$ and $Li_2SiO_3$ from the starting materials SiO and $Li_2O$ are analyzed using Vienna Ab-initio Simulation (VASP) package and the total energies of Li-Si-O compounds are evaluated using Projector Augmented Wave (PAW) method and correlated the structural characteristics of the binary system SiO-$Li_2O$ with experimental data from electrochemical method. Despite $Li_2SiO_3$ becomes stable phase by virtue of lowest formation energy calculated through VASP, the experimental method shows presence of $Li_4SiO_4$ as the only product formed when SiO and $Li_2O$ reacts during slow heating to reach $550^{\circ}C$ and found no evidence for the formation of $Li_2SiO_3$. Also, higher density of $Li_4SiO_4$(2.42 g $ml^{-1}$) compared to the compositional mixture $1SiO_2-2Li_2O$ (2.226 g $ml^{-1}$) and better cycle capacity observed through experiment proves that $Li_4SiO_4$ as the most stable anode supported by better cycleabilityfor lithium ion battery remains as paradox from the point of view of VASP calculations.

• Korean Chemical Engineering Research
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• 제57권5호
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• pp.714-722
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• 2019

산 염기성질이 다양하게 존재하는 담체($SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, $SiO_2$, $TiO_2$, MgO) 상에 17 wt% Ni을 고정한 상태에서 함침법을 사용하여 촉매를 제조하여 수소 존재 하에 에탄올과 암모니아의 환원성 아민화 반응에 대한 촉매활성을 비교 평가하였다. 반응 전후에 있어 사용된 촉매는 X-선 회절, 질소 흡착, 에탄올-승온탈착(EtOH-TPD), 이소프로판올-승온탈착(IPA-TPD), 수소 화학흡착을 사용하여 특성분석을 수행하였다. pH 9.5 이상에서 침전법을 사용하여 $ZrO_2$와 $Y_2O_3$ 담체 제조 시 파이렉스 반응기에서 미량의 Si 용융으로 인해 $SiO_2-ZrO_2$와 $SiO_2-Y_2O_3$ 복합 산화물이 각각 생성되었다. 사용된 촉매 중에서 $Ni/SiO_2-Y_2O_3$ 촉매가 가장 좋은 활성을 보였으며 이는 높은 니켈 분산도와 EtOH-TPD와 IPA-TPD에서의 낮은 탈착온도 등과 밀접한 관련이 있었다. Ni/MgO 촉매상에서의 낮은 촉매 활성은 NiO-MgO 고형물 형성에 기인한 것으로 보이며, $Ni/TiO_2$ 경우에서는 담체-금속 간의 강한 상호 작용으로 인해 낮은 니켈 금속 상 존재로 인해 반응성이 낮게 나왔다. $TiO_2$와 MgO 이외의 담체를 사용한 경우에 있어서 유사한 에탄올 전환율에서의 에틸아민류와 아세토니트릴 선택도는 큰 차이를 보이지 않았다.

• 한국진공학회지
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• 제20권5호
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• pp.381-386
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• 2011

실리콘(silicon) 기판위에 전기화학증착법(electrochemical deposition)을 이용하여 성장된 ZnO (zinc oxide) 나노로드 표면에 $SiO_2$ (silicon dioxide)를 전자빔증발법(e-beam evaporation)을 이용하여 증착하였으며, 이는 자연적으로 경사입사(oblique angle) 증착이 이루어져 $SiO_2$ 나노로드가 자발 형성되어, ZnO/$SiO_2$ 가지형 나노계층구조형태가 제작될 수 있음을 확인하였다. 실험을 위해서 $SiO_2$ 증착률을 0.5 nm/s로 고정하고 $SiO_2$ 증착시간을 변화시켰으며, 각각 나노구조의 형태와 광학적 특성을 분석하였다. 실리콘 기판위에 전기화학증착법으로 성장된 ZnO 나노로드는 수직으로 정렬된 1차원의 나노구조의 기하학적 형태를 갖고 있어, 입사되는 빛의 파장이 300 nm에서 535 nm인 영역에서 10% 미만의 반사방지(antireflection) 특성을 보였으며, $SiO_2$ 증착시간이 100 s일 때의 ZnO/$SiO_2$ 가지형 나노계층구조에서는 점차적 변화를 갖는 유효 굴절률 분포로 인해 개선된 반사 방지 특성을 확인하였다. 이러한 반사방지 특성과 branch 계층형태의 나노구조형태는 광전소자 및 태양광 소자 응용에 있어서 유용한 소재로 사용될 수 있다.