• Geomechanics and Engineering
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• v.34 no.2
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• pp.125-138
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• 2023

To improve the understanding of infiltration characteristic of modified slurry and the support efficiency of filter cake in silty sand strata, the slurry infiltration (SI) and filter cake formation (FCF) were investigated in a laboratory apparatus. The water discharge and the excess pore pressure at different depths of silty sand strata were measured during SI. The relationship between permeability coefficient/thickness ratio of filter cake (k_c/ΔL) and effective slurry pressure conversion rate of filter cake (η) were analyzed. Moreover, the SI and FCF process as well as the modification mechanism of CMC (carboxymethyl cellulose) were clarified. The experimental results indicate the formation of only external filter cake in the silty sand strata. The slurry particles obtain thicker water membrane after being modified by CMC, which blocks partial water path in filter cake and decreases the water discharge significantly. The silty sand excavated from tunnel face also contributes to the water discharge reduction. The k_c of the external filter cake ranges from 3.83×10^-8 cm/s to 7.44×10^-8 cm/s. The η of the external filter cake is over 96%, which decreases with increasing k_c/ΔL. A silty sand content within 10% is suggested during construction to ensure the uniformity of the filter cake.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2002-2008
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• 2012

In recent years, while the importance of thermal management has been emphasized due to smaller electronic products, various materials have been used as heat sink. In this study, porous ceramic heat sink was developed with SiC, successfully separated from the slurry of SiC occurring in solar energy materials industry and the thermal performance of porous SiC heat sink has been compared with those of aluminum heat sink and pure SiC heat sink through experiment. From the experimental results, it was verified that porous recycled SiC heat sink has better thermal performance than aluminum heat sink since its micropores increase the heat transfer area. In addition, the effect of the micropores on thermal performance has been quantified by increasing convective heat transfer coefficient with numerical analysis.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.167-171
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• 2003

CMP(Chemical Mechanical Planarization) slurry for STI process is made by mechanically synthesized$CeO_2$as abrasive. The abrasive can be stabilized by electrostatic or steric stabilization in aqueous slurry and steric stabilization is more effective for long-term stability. Blanket-type$SiO_2$and $Si_3N_4$ wafers are polished with CMP slurry containing$CeO_2$synthesized in 50$0^{\circ}C$ or $700^{\circ}C$. Removal rate and surface uniformity of$SiO_2$and$Si_3N_4$wafer and selectivity are influenced by synthetic condition of abrasive, suspension stability and pH of slurries.

• Journal of the Korea Institute of Building Construction
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• v.17 no.2
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• pp.167-174
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• 2017

This research investigated the mechanical performance of slurry infiltrated high performance fiber reinforced cementitious composite (SI-HPFRCC) with high volume blast furnace slag powder. Hooked-end steel fibers (volume fraction of 6.4%) were used for the fabrication of SI-HPFRCC. A series of mechanical performance test was conducted including strength and toughness of SI-HPFRCC in compressive and flexural mode at four different ages. Compressive and flexural strength tests of the slurry matrix at the same ages were also conducted in order to evaluate fiber reinforcing effect on the mechanical performance. The flexural response of SI-HPFRCC shows an increasing brittleness with age. The compressive response also shows an increasing brittleness with age but the degree of brittleness is much lower than the flexural case. In terms of strength, SI-HPFRCC shows about 140~190% of compressive strength improvement and 440~500% flexural strength improvement comparing to the slurry matrix.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• Journal of Korea Foundry Society
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• v.13 no.6
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• pp.524-531
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• 1993

Dispersion behaviors of SiC particles and microstructures in Al-2%Si/SiCp composite prepared by Rheo-compocasting were studied with change of fabrication conditions(slurry temperature, agitation time) and additions of Mg($0{\sim}3wt.%$). Also, the microhardness change of matrix, interface and total in composites were examined with additions of Mg($0{\sim}3wt.%$). The dispersion of particles in the composites became relatively homogeneous with increase of Mg additions, agitation time and decrease of slurry temperature. Rate of occupied area by particle in matrix was increased as increase of Mg additions due to improvement of wettability between SiC particle and matrix. A favorable composites were obtained by melting under Ar atmospheric SiCp injection and bottom pouring system. According to the analysis of X-ray diffraction, $Mg_2Si$, $Al_4C_3$, $SiO_2$ and MgO, etc, intermetallic compounds were formed by chemical interreaction at interface of matrix and particles. The microhardness of interface is higher than that of matrix due to more strengthening of above intermetallic compounds. It was considered that the total hardness of the composites is improved by dispersing of SiCp and addition of Mg.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.166-171
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• 2007

The characterization of monolithic SiC and SiCf/SiC composite materials fabricated by NITE and RS processes was investigated in conjunction with the detailed analysis of their microstructure and density. The NITE-SiC based materials were fabricated, using a SiC powder with average size of 30 nm. RS- SiCf/SiC composites were fabricated with a complex slurry of C and SiC powder. In the RS process, the average size of starting SiC particle and the blending ratio of C/SiC powder were $0.4\;{\mu}m$ and 0.4, respectively. The reinforcing materials for /SiC composites were BN-SiC coated Hi-Nicalon SiC fiber, unidirectional or plain woven Tyranno SA SiC fiber. The characterization of all materials was examined by the means of SEM, EDS and three point bending test. The density of NITE-SiCf/SiC composite increased with increasing the pressure holding time. RS-SiCf/SiC composites represented a great decrease of flexural strength at the temperature of $1000\;^{\circ}C.$

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.19-22
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• 1997

The surface modificaion of alumina by $Al_2$O$_3$/SiC nanocomposite coating was studied in terms of processing and microstructure. A powder slurry of 5 vol% SiC composition was dipcoated onto presintered alumina bodies and pressurelessly sintered at 1$700^{\circ}C$ for 2 h in $N_2$. The used of organic binder and plasticizer in the slurry preparation, and the control of the density of presintered alumina body were found to be necessary to avoid cracking and warping during processing. The nanocomposite coating well bonded to the alumina body with thickness about 110 ${\mu}{\textrm}{m}$. The average grain size of coating (2 ${\mu}{\textrm}{m}$) was much finer than that of alumina body (13 ${\mu}{\textrm}{m}$). Fracture surface observations revealed mostly transgranular fracture for the coating, whereas intergranular fracture for the alumina body. Some pores (about 6%) were observed in the coating layer, although the alumina body showed fully dense microstructure.

• Resources Recycling
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• v.12 no.3
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• pp.25-30
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• 2003

The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.